220GHz低噪声放大器研究

基于IHP锗硅BiCMOS工艺，研究和实现了两种220 GHz低噪声放大器电路，并将其应用于220 GHz太赫兹无线高速通信收发机电路。一种是220 GHz四级单端共基极低噪声放大电路，每级电路采用了共基极（Common Base, CB）电路结构，利用传输线和金属-绝缘体-金属(Metal-Insulator-Metal, MIM)电容等无源电路元器件构成输入、输出和级间匹配网络。该低噪放电源的电压为1.8 V，功耗为25 mW，在220 GHz频点处实现了16 dB的增益，3 dB带宽达到了27 GHz。另一种是220 GHz四级共射共基差分低噪声放大电路，每级都采用共射共基的电路结构，放大器利用微带传输线和MIM电容构成每级的负载、Marchand-Balun、输入、输出和级间匹配网络等。该低噪放电源的电压为3 V，功耗为234 mW，在224 GHz频点实现了22 dB的增益，3 dB带宽超过6 GHz。这两个低噪声放大器可应用于220 GHz太赫兹无线高速通信收发机电路。

Research on 220 GHz Low Noise Amplifiers

Based on the IHP SiGe BiCMOS technology, two 220 GHz low noise amplifier circuits are researched, implemented and applied to 220 GHz terahertz wireless high-speed communication transceiver circuits. One is a 220 GHz four-stage single-ended common-base low-noise amplifier circuit. Each stage of the circuit adopts a common base circuit structure, and uses passive circuit components such as transmission lines and metal-insulator-metal (MIM) capacitors to form input, output and interstage matching network. The low noise amplifier has a supply voltage of 1.8 V, consumes 25 mW, achieves 16 dB of gain at 220 GHz, and reaches 27 GHz with a 3 dB bandwidth. The other is a 220 GHz four-stage cascode differential low-noise amplifier circuit. Each stage uses a cascode circuit structure. The amplifier uses microstrip transmission lines and MIM capacitors to form inductive load, Marchand-Balun, input, output and inter-stage matching networks. The low noise amplifier has a supply voltage of 3 V, consumes 234 mW, achieves 22 dB gain at 224 GHz, and exceeds 6 GHz with 3 dB bandwidth. These two low noise amplifiers can be used in 220 GHz wireless high speed terahertz communication transceiver circuits.