| 用LPE研制的室温连续工作的1．48μm单量子阱激光器 |
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| 引用本文： | 杨志坚,党小忠,陈娓兮,王舒民,章蓓,陈高庭.用LPE研制的室温连续工作的1．48μm单量子阱激光器[J].中国激光,1994,21(1):1-4. |
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| 作者姓名： | 杨志坚 党小忠 陈娓兮 王舒民 章蓓 陈高庭 |
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| 作者单位： | 北京大学物理系，中国科学院上海光机所 |
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| 摘 要： | 利用液相外延（ＬＰＥ）技术研制出室温连续工作的ＩｎＧａＡｓＰ／ＩｎＰ分别限制单量子阶（ＳＣＨ－ＳＱＷ）双沟平面掩埋（ＤＣ－ＰＢＨ）激光器。室温下，腔面未镀膜的激光器最低阈值电流为２３ｍＡ（激光器腔长为２００μｍ，ＣＷ，１３℃）。激射波长为１．４８μｍ，最高输出功率达１８．８ｍＷ（Ｌ＝２００μｍ．ＣＷ，１８℃）。脉冲输出峰值功率大于５０ｍＷ（脉冲宽度１μｓ、频率１ｋＨｚ），未见功率饱和。量子阱的阱宽为２０ｎｍ［１］．
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| 关 键 词： | 液相外延，半导体激光器，量子阱 |
| 收稿时间： | 1993/4/13 |
Room Temperature CW Single Quantum Well Laser at 1.48 μmFabricated by Liquid Phase Epitaxy |
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| Yang Zhijian,Dang Xiaozhong,Chen Weixi,Wang Shumin,Zhang Bei.Room Temperature CW Single Quantum Well Laser at 1.48 μmFabricated by Liquid Phase Epitaxy[J].Chinese Journal of Lasers,1994,21(1):1-4. |
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| Authors: | Yang Zhijian Dang Xiaozhong Chen Weixi Wang Shumin Zhang Bei |
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| Abstract: | We have successfully fabricated the room temperature CW InGAsP/InP separated confinement single quantum well(SQW)DC-PBH laser at 1.48 μm by liquid phase epitaxy for the first time in our country. The lowest threshold current at room temperature is 23 mA for the cavity length of 200 μm The highest CW output power is 18.8 mW per facet without mirror coating. The power saturation doesn't occur yet while the pulsed output power is higher than 50 mW. The thicknesses of active layer and transition layer in quantum well are 20 nm and 3 nm, respectively. |
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| Keywords: | liquid phase epitaxy quantum well semiconductor laser |
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