| 一维均匀掺杂突变PN结伽马剂量率辐射解析模型 |
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| 引用本文： | 赵珩尧,黄清华,代 刚,李 顺,梁 堃.一维均匀掺杂突变PN结伽马剂量率辐射解析模型[J].太赫兹科学与电子信息学报,2018,16(3):541-546. |
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| 作者姓名： | 赵珩尧 黄清华 代 刚 李 顺 梁 堃 |
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| 作者单位： | Institute of Electronic Engineering，China Academy of Engineering Physics，Mianyang Sichuan 621999，China,Institute of Electronic Engineering，China Academy of Engineering Physics，Mianyang Sichuan 621999，China,Institute of Electronic Engineering，China Academy of Engineering Physics，Mianyang Sichuan 621999，China,Institute of Electronic Engineering，China Academy of Engineering Physics，Mianyang Sichuan 621999，China and Institute of Electronic Engineering，China Academy of Engineering Physics，Mianyang Sichuan 621999，China |
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| 摘 要： | 研究硅基半导体集成电路最基本结构之一PN结的伽马剂量率辐射模型，阐明PN剂量率辐射模型的重要意义。根据半导体物理基本方程，推导计算出在剂量率辐射下一维均匀掺杂突变PN结光电流响应的解析解模型，根据解析解，在不同参数下用Mathematica作图观察，并与计算机辅助设计技术(TCAD)数值模拟仿真结果对比，验证解析解的正确性；最后基于解析解，通过分析剂量率、偏压、PN结几何尺寸、掺杂浓度、载流子扩散系数、少子寿命等参数对稳态光电流的影响，提出一个更方便工程计算的稳态光电流模型。
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| 关 键 词： | PN结 剂量率 光电流 解析解 计算机辅助设计技术 模型 |
| 收稿时间： | 2016/11/30 0:00:00 |
| 修稿时间： | 2017/2/8 0:00:00 |
The gamma dose rate radiation model of one-dimensional uniform doping abrupt PN junction based on the analytic solution |
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| ZHAO Hengyao,HUANG Qinghu,DAI Gang,LI Shun and LIANG Kun.The gamma dose rate radiation model of one-dimensional uniform doping abrupt PN junction based on the analytic solution[J].Journal of Terahertz Science and Electronic Information Technology,2018,16(3):541-546. |
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| Authors: | ZHAO Hengyao HUANG Qinghu DAI Gang LI Shun and LIANG Kun |
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| Abstract: | The gamma dose rate radiation model of PN junction which is the fundamental structure of integrated circuit is studied. Firstly, the importance of the PN junction dose rate radiation model is explained. Then, the analytic model of the photocurrent response of one-dimensional uniform doping abrupt PN junction is calculated based on the equation of semiconductor physics. Photocurrent response with different parameters is drawn by Mathematica according to the analytic solution. Results are compared with Technology Computer Aided Design(TCAD) numerical simulation so as to confirm the correction of analytic solution. Finally, through the analysis of the effect of dose rate, bias, PN junction geometry, doping concentration, diffusion coefficient, minority carrier lifetime on steady-state photocurrent, a new model is put forward to calculate the steady-state photocurrent, which could be much more convenient for engineering calculation. |
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