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窄禁带N型掺杂HgCdTe中自由载流子的奇特性质
引用本文:钱定榕.窄禁带N型掺杂HgCdTe中自由载流子的奇特性质[J].红外与毫米波学报,1991,10(2):156-160.
作者姓名:钱定榕
作者单位:中国科学院上海技术物理研究所红外物理国家实验室
摘    要:研究已表明掺杂HgCdTe中不存在对于自由载流子等离子体振荡的朗道阻尼,本文进一步研究了HgCdTe掺杂及随之产生的简并对自由载流子能量色散关系的影响,并将这种影响计入自由载流子的介电函数后,从理论上证明了掺杂窄禁带半导体中不存在朗道阻尼的现象是由于自由载流子能量色散关系变化引起其运动行为变化所致。

关 键 词:HgCdTe  自由载流子  介电函数  掺杂

THE UNIQUE BEHAVIOR OF FREE-CARRIERS IN N-TYPE DOPED NARROW-GAP HgCdTe
QIAN DINGRONG.THE UNIQUE BEHAVIOR OF FREE-CARRIERS IN N-TYPE DOPED NARROW-GAP HgCdTe[J].Journal of Infrared and Millimeter Waves,1991,10(2):156-160.
Authors:QIAN DINGRONG
Abstract:It has been found from our previous studies that there is no Landau damping in N-type doped narrow-gap HgCdTe, which is contrary to the existing theory and experimental fact. The further study on the effect of doping and hence the degeneration on the dispersion relation of energy of free-carriers and the calculation of Lindhard function of free-carriers taking into account this effect show that the absence of Landau damping results from the change of free-carrier behavior caused by the dispersion relation of energy of free-carriers.
Keywords:dielectric function  plasma oscillations  Landau levels  damping  
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