精细雾化抛光氮化硅陶瓷的抛光液配制参数优化

采用超声精细雾化施液抛光对氮化硅陶瓷基体进行抛光,研究了不同的pH值、磨料浓度以及氧化剂含量对氮化硅陶瓷基体抛光的材料去除率的影响,优化了pH值、磨料浓度及氧化剂含量,并与传统的化学机械抛光进行了对比。结果表明:当二氧化硅磨粒质量分数为5wt%,氧化剂含量为1wt%,pH值为8时,材料去除率MRR为108.24nm/min且表面粗糙度Ra为3.39nm。在相同的抛光参数下,传统化学机械抛光的材料去除率MRR为125nm/min,表面粗糙度Ra为2.13nm;精细雾化抛光的材料去除率及表面粗糙度与传统抛光接近,但精细雾化抛光所用抛光液用量仅为传统抛光所用抛光液用量的1/9。

Silicon Nitride Ceramics Polishing Slurry in Ultrasound Fine Atomization CMP

Ultrasonic finely atomized liquid polishing was applied to polish the silicon nitride ceramic substrate.Effects of pH value,concentration of abrasive and oxidant content on silicon nitride ceramic substrate on polishing material removal rate were investigated,and the optimized pH value and the concentration of abrasive and oxidant content were determined,and then compared with the traditional chemical mechanical polishing.Results show that:w hen the silica abrasive mass fraction is 5w t%,oxidant content is 1w t%,and pH value is 8,the material removal rate M RR is 108.24nm/min and the surface roughness Ra is 3.39nm.Under the same experimental conditions,the removal rate of the conventional polishing MRR is 125nm/min,the surface roughness Ra is 2.13nm;Although the material removal rate and surface roughness of ultrasonic fine atomization polishing are close to that of the traditional polishing,the polishing slurry used in the fine atomization polishing is only 1/9 of the polishing slurry used in the traditional polishing.