| 在外电场作用下有限抛物量子阱中类氢杂质态结合能 |
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| 引用本文： | 赵凤岐,萨茹拉.在外电场作用下有限抛物量子阱中类氢杂质态结合能[J].半导体学报,2006,27(5):830-833. |
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| 作者姓名： | 赵凤岐 萨茹拉 |
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| 作者单位： | 内蒙古师范大学物理与电子信息学院，呼和浩特 010022;内蒙古师范大学物理与电子信息学院，呼和浩特 010022 |
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| 摘 要： | 采用变分方法研究GaAs/AlxGa1-xAs有限抛物量子阱中类氢杂质态能量和结合能随外电场和阱宽的变化关系.在计算中考虑了电子有效带质量和介电常数随空间坐标(或合金组分)的变化因素.结果表明,外电场对类氢杂质态能量和结合能均有明显的影响,并且这些影响随着阱宽的增大而增大.电子有效带质量和介电常数随空间坐标的变化效应使得类氢杂质态基态能量减小,结合能增大,此效应随着阱宽的增大明显变小.
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| 关 键 词： | 抛物量子阱 类氢杂质态 外电场 结合能 电场作用 有限 抛物量子阱 类氢杂质态 结合能 External Electric Field Quantum Well Parabolic Finite Impurity Energy 基态能量 效应 影响 结果 化因素 合金组分 空间坐标 介电常数 质量 |
| 文章编号： | 0253-4177(2006)05-0830-04 |
| 收稿时间： | 06 26 2005 12:00AM |
| 修稿时间： | 12 4 2005 12:00AM |
Quantum Well Under an External Electric Field |
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| Zhao Fengqi and Sarula.Quantum Well Under an External Electric Field[J].Chinese Journal of Semiconductors,2006,27(5):830-833. |
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| Authors: | Zhao Fengqi and Sarula |
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| Affiliation: | College of Physics and Electron in Information,Inner Mongolia Normal University,Hohhot 010022,China;College of Physics and Electron in Information,Inner Mongolia Normal University,Hohhot 010022,China |
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| Abstract: | The ground state and binding energy of a hydrogenic impurity as functions of the electric field and well width in a GaAs/AlxGa1-xAs PQW are investigated with the variational method.The effects of spatial dependent effective mass and spatial dependent dielectric constant are considered in the calculation.The results indicate that the effects of the external electric field on the ground state and binding energy of the hydrogenic impurity are noticeable,and they increase with increasing well width.The effects of the spatial dependent effective mass and spatial dependent dielectric constant make the ground state energy decrease and the binding energy increase.These effects decrease with increasing well width. |
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| Keywords: | parabolic quantum well hydrogenic impurity external electric field binding energy |
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