| SiC MESFET微波功率测试技术 |
| |
| 引用本文： | 王同祥,潘宏菽,李亮.SiC MESFET微波功率测试技术[J].半导体学报,2006,27(13):239-241. |
| |
| 作者姓名： | 王同祥 潘宏菽 李亮 |
| |
| 作者单位： | 中国电子科技集团公司第13研究所，石家庄 050051;中国电子科技集团公司第13研究所，石家庄 050051;中国电子科技集团公司第13研究所，石家庄 050051 |
| |
| 摘 要： | 对SiC MESFET的微波测试技术进行了分析，并针对这一采用第三代半导体材料研制的器件，结合硅微波双极功率晶体管和GaAs MESFET的测试技术，建立了SiC MESFET的微波测试系统，完成了2GHz工作频率下瓦级功率输出SiC MESFET的测试，功率增益大于6dB，器件的fT为6.7GHz, fmax达25GHz.
|
| 关 键 词： | 微波功率 测试 SiC MESFET 输出功率 |
Microwave Power-Tested Technology of SiC MESFET |
| |
| Wang Tongxiang,Pan Hongshu and Li Liang.Microwave Power-Tested Technology of SiC MESFET[J].Chinese Journal of Semiconductors,2006,27(13):239-241. |
| |
| Authors: | Wang Tongxiang Pan Hongshu and Li Liang |
| |
| Affiliation: | The 13th Research Institute,CETC,Shijiazhuang 050051,China;The 13th Research Institute,CETC,Shijiazhuang 050051,China;The 13th Research Institute,CETC,Shijiazhuang 050051,China |
| |
| Abstract: | The microwave testing system of SiC MESFET is analyzed.For the device based on the third era semiconductor,the microwave testing system of SiC MESFET is established associating to the testing technology of Si and GaAs MESFET.The test of watt level power output is accomplished under the working frequency of 2GHz.The result is that the power gain is greater than 6dB,the fT is 6.7GHz,and fmax achieves 25GHz. |
| |
| Keywords: | microwave power testing SiC MESFET output power |
|
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
