新型长波长InP基谐振腔增强型光探测器

介绍了一种新型长波长InP基谐振腔增强型(RCE)光探测器。通过V(FeCl3):V(H2O)溶液对InGaAs牺牲层的选择性湿法腐蚀,制备出具有InP/空气隙的高反射率分布布拉格反射镜(DBR),并将该选择性湿法腐蚀技术成功地应用到长波长InP基谐振腔增强型光探测器的制备中去,从而彻底解决了InP/InGaAsP高反射率分布布拉格反射镜难以外延生长的问题。所制备出的谐振腔增强型光探测器,其台面面积为50μm×50μm,底部反射镜为1.5对的InP/空气隙分布布拉格反射镜,顶部反射镜靠InGaAsP与空气的界面反射来实现。测试结果表明,该谐振腔增强型光探测器在波长1.510μm处获得了约59％的峰值量子效率,在3V反偏压下暗电流为2nA,3dB响应带宽达到8GHz。

Novel InP-Based Resonant Cavity Enhanced Photodetectors for Long-Wavelength Applications

A novel long-wavelength InP-based resonant cavity enhanced (RCE) photodetector is introduced. High-reflectivity InP/air gap distributed Bragg reflectors (DBRs) have been fabricated by the selective wet etching of InGaAs sacrificial layers with FeCl3∶H2O solution. And the technique has been successfully applied to the fabrication of long-wavelength InP-based RCE photodetector. Thus the problem, the unachievable epitaxy of high-reflectivity InP/InGaAsP DBR, is resolved. The mesa area of this type RCE photodetector is 50 μm×50 μm, the bottom mirror is 1.5 pairs InP/air gap DBR, the interface reflection of the air and InGaAsP layer serves as the top mirror. The measurement results show that the quantum efficiency of 59% at 1.510 μm wavelength, the dark current of 2 nA at 3 V reverse bias, and the 3 dB bandwidth of 8 GHz have been achieved.