Electrical and γ-ray energy spectrum response properties of PbI2 crystal grown by physical vapor transport |
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引用本文: | 孙辉,朱兴华,杨定宇,何知宇,朱世富,赵北君.Electrical and γ-ray energy spectrum response properties of PbI2 crystal grown by physical vapor transport[J].半导体学报,2012(5):17-20. |
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作者姓名: | 孙辉 朱兴华 杨定宇 何知宇 朱世富 赵北君 |
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作者单位: | Department of Materials Science,Sichuan University;School of Optoelectronic Technology,Chengdu University of Information Technology |
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基金项目: | Project supported by the National Natural Science Foundation of China(No.50902012);the Natural Science Foundation of Sichuan Province,China(No.2009JY0087) |
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摘 要: | Lead iodide single crystal was grown by physical vapor transport method.Two radiation detectors with different configurations were fabricated from the as-grown crystal.The electrical and y-ray response properties at room temperature of the both detectors were investigated.It is found that the dark resistivity of the detectors are respectively 3×1010Ω·cm for bias electric field parallel to crystal c-axis(E//c) and 2×108Ω·cm for perpendicular to crystal c-axis(E⊥c).The energy spectrum response measurement shows that both detectors were sensitive to 241 Am 59.5 keVγ-rays,and achieved a good energy resolution of 16.8%for the E⊥c-axis configuration detector with a full width at half maximum of 9.996 keV.
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关 键 词: | PbI2 crystal physical vapor transport radiation detector γ-rays energy spectrum |
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