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Electrical and γ-ray energy spectrum response properties of PbI2 crystal grown by physical vapor transport
引用本文:孙辉,朱兴华,杨定宇,何知宇,朱世富,赵北君.Electrical and γ-ray energy spectrum response properties of PbI2 crystal grown by physical vapor transport[J].半导体学报,2012(5):17-20.
作者姓名:孙辉  朱兴华  杨定宇  何知宇  朱世富  赵北君
作者单位:Department of Materials Science,Sichuan University;School of Optoelectronic Technology,Chengdu University of Information Technology
基金项目:Project supported by the National Natural Science Foundation of China(No.50902012);the Natural Science Foundation of Sichuan Province,China(No.2009JY0087)
摘    要:Lead iodide single crystal was grown by physical vapor transport method.Two radiation detectors with different configurations were fabricated from the as-grown crystal.The electrical and y-ray response properties at room temperature of the both detectors were investigated.It is found that the dark resistivity of the detectors are respectively 3×1010Ω·cm for bias electric field parallel to crystal c-axis(E//c) and 2×108Ω·cm for perpendicular to crystal c-axis(E⊥c).The energy spectrum response measurement shows that both detectors were sensitive to 241 Am 59.5 keVγ-rays,and achieved a good energy resolution of 16.8%for the E⊥c-axis configuration detector with a full width at half maximum of 9.996 keV.

关 键 词:PbI2  crystal  physical  vapor  transport  radiation  detector  γ-rays  energy  spectrum
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