| L波段0.5mm SiC SIT |
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| 引用本文： | 陶永洪,柏松,陈刚,李理,李赟,尹志军.L波段0.5mm SiC SIT[J].固体电子学研究与进展,2011,31(6):536-539. |
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| 作者姓名： | 陶永洪 柏松 陈刚 李理 李赟 尹志军 |
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| 作者单位： | 南京电子器件研究所,南京,210016 |
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| 摘 要： | 作为测试小管芯,所研制的小栅宽(0.5 mm)L波段SiC SIT器件,台面和栅凹槽线宽分别为1.0 μm和1.5 μm,源间距2.5 μm,采用凹栅结构、Al注入形成PN结等优化手段,提高了器件的击穿特性和微波特性.0.5 mm栅宽SiC SIT器件,输出功率通过负载牵引系统进行测试,在1.2 GHz CW、50 V...
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| 关 键 词： | L波段 碳化硅 静态感应晶体管 负载牵引 |
0.5 mm SiC L-band SIT |
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| TAO Yonghong,BAI Song,CHEN Gang,LI Li,LI Yun,YIN Zhijun.0.5 mm SiC L-band SIT[J].Research & Progress of Solid State Electronics,2011,31(6):536-539. |
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| Authors: | TAO Yonghong BAI Song CHEN Gang LI Li LI Yun YIN Zhijun |
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| Abstract: | A 0.5 mm gate periphery SiC L-band SIT device with a recessed has been fabricated by using a p-type aluminum implatation to form PN junction on 4 H-SiC wafer,which decreases leakage current and enchances breakdown voltage.The device structure is N-channel with source to source pitch of 2.5 μm,source mesa width of 1.0 μm and gate trench width of 1.5 μm.Its microwave characteristics have been studied by load-pull system.It exhibited a output power density of 7.55 W/cm with gain of 7.3 dB and 4.4 W/cm with gain of 5.76 dB under 1.2 GHz and 1.4 GHz CW operation at drain to source voltage of 50 V respectively. |
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| Keywords: | L-band SiC SIT load-pull |
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