a Institute of Nuclear Research of the Hungarian Academy of Sciences (ATOMKI), H-4001, P.O. Box 51, Debrecen, Hungary
b Research Group on Laser Physics of the Hungarian Academy of Sciences, Szeged, P.O. Box 406, H-6701, Szeged, Hungary
Abstract:
The formation and deposition of particulates by pulsed laser deposition of Si1?xGex semiconductor alloy thin films are discussed. Using Rutherford backscattering spectrometry with micrometer lateral resolution (micro-RBS) the film composition was measured with high accuracy, even in the presence of particulates with a high areal density of 20,000–30,000 particulates per mm2. We show that on impact of a particulate, the part of the thin film which is already deposited probably melts and its Ge content segregates to the surface.