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Micro-RBS characterisation of the chemical composition and particulate deposition on pulsed laser deposited Si1−xGex thin films
Authors:A Simon  Z Kntor
Affiliation:

a Institute of Nuclear Research of the Hungarian Academy of Sciences (ATOMKI), H-4001, P.O. Box 51, Debrecen, Hungary

b Research Group on Laser Physics of the Hungarian Academy of Sciences, Szeged, P.O. Box 406, H-6701, Szeged, Hungary

Abstract:The formation and deposition of particulates by pulsed laser deposition of Si1?xGex semiconductor alloy thin films are discussed. Using Rutherford backscattering spectrometry with micrometer lateral resolution (micro-RBS) the film composition was measured with high accuracy, even in the presence of particulates with a high areal density of 20,000–30,000 particulates per mm2. We show that on impact of a particulate, the part of the thin film which is already deposited probably melts and its Ge content segregates to the surface.
Keywords:RBS  Microbeam  Pulsed laser deposition  Surface topography  Particulate formation
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