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| The Bipolar Field-Effect Transistor: ⅩⅢ. Physical Realizations of the Transistor and Circuits (One-Two-MOS-Gates on Thin-Thick Pure-Impure Base) | |
| 引用本文： | 薩支唐,揭斌斌.The Bipolar Field-Effect Transistor: ⅩⅢ. Physical Realizations of the Transistor and Circuits (One-Two-MOS-Gates on Thin-Thick Pure-Impure Base)[J].半导体学报,2009,30(2):1-12. |
| 作者姓名： | 薩支唐 揭斌斌 |
| 摘 要： | |
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