| SiC和GaN电力电子器件的研究进展 |
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| 引用本文： | 李天宇.SiC和GaN电力电子器件的研究进展[J].微电子学,2016,46(5):685-689. |
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| 作者姓名： | 李天宇 |
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| 作者单位： | 沈阳农业大学 信息与电气工程学院, 沈阳 110866 |
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| 基金项目： | 国家自然科学基金青年项目(71301108)；辽宁省教学科学十二五规划课题(JG13DB093) |
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| 摘 要： | 与传统的Si基器件相比,SiC和GaN器件具有工作温度高、击穿电压高、开关速度快等优势,因此SiC和GaN材料是制备电力电子器件的理想材料。总结了近年来SiC和GaN电力电子器件的研究进展,包括二极管,MOSFET,JFET和BJT结构的SiC器件,以及SBD,PN结二极管,HEMT和MOSFET结构的GaN器件。
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| 关 键 词： | SiC GaN 电力电子器件 |
| 收稿时间： | 2015/12/8 0:00:00 |
Research Progress of Power Electronic Devices for SiC and GaN |
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| LI Tianyu.Research Progress of Power Electronic Devices for SiC and GaN[J].Microelectronics,2016,46(5):685-689. |
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| Authors: | LI Tianyu |
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| Affiliation: | College of Information and Electrical Engineering, Shenyang Agricultural University, Shenyang 110866, P. R. China |
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| Abstract: | Compared with the traditional Si based devices, the SiC and GaN devices have advantages such as higher operating temperature, bigger breakdown voltage, and faster switching speed, which make SiC and GaN ideal materials for power electronic device preparation. The research progresses of SiC and GaN power electronic devices in recent years were summarized, including diode, MOSFET, JFET and BJT structures of SiC devices and SBD, PN diode, HEMT and MOSFET structures of GaN devices. |
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