碳化硅功率器件高密度互连技术研究进展

相比于硅,SiC材料因具有宽禁带、高导热率、高击穿电压、高电子饱和漂移速率等优点而在耐高温、耐高压、耐大电流的高频大功率器件中得到了广泛应用。传统的引线键合是功率器件最常用的互连形式之一。然而,引线键合固有的寄生电感和散热问题严重限制了SiC功率器件的性能。文章首先介绍了硅功率器件的低寄生电感和高效冷却互连技术,然后对SiC功率器件互连技术的研究进行了综述。最后,总结了SiC功率器件互连技术面临的挑战。

Research Progress of High Density Interconnection Technology for SiC Power Devices

Compared with Si material, SiC material is widely used in high frequency and high power applications with high temperature resistance, high voltage resistance and high current resistance due to its superior material properties of large band gap, high thermal conductivity, high breakdown voltage and high electron saturation drift rate. Conventional wire bonding scheme has been one of the most preferred interconnection structures for power modules. However, the technique limits the performance of a SiC power module due to parasitic inductance and heat dissipation issues that are inherent in bonding wires. In this article, low parasitic inductance and high efficient cooling interconnection techniques for Si power modules are introduced first. Then, attempts on developing interconnection techniques for SiC power modules are thoroughly introduced. Finally, challenges in the interconnection of SiC power module are summarized.