| 重掺杂能带结构的变化对突变HBT电流影响 |
| |
| 引用本文： | 周守利,崔海林,黄永清,任晓敏.重掺杂能带结构的变化对突变HBT电流影响[J].半导体学报,2006,27(1):110-114. |
| |
| 作者姓名： | 周守利 崔海林 黄永清 任晓敏 |
| |
| 作者单位： | 北京邮电大学，北京 100876;北京邮电大学，北京 100876;北京邮电大学，北京 100876;北京邮电大学，北京 100876 |
| |
| 基金项目： | 国家重点基础研究发展计划(973计划) |
| |
| 摘 要： | 基于禁带变窄量在导带和价带之间的分布比例与掺杂浓度相关的Jain-Roulston模型,研究了重掺杂能带结构的变化对突变异质结HBT电流影响.研究表明:禁带变窄量在导、价带间分布模型选用的不同,计算结果之间有明显的差别,基于Jain-Roulston分布模型的结果同实验测量符合很好.因此对于突变HBT性能分析,必须精确考虑重掺杂禁带变窄量在能带上的具体分布.
|
| 关 键 词： | HBT 重掺杂效应 禁带变窄 Jain-Roulston模型 重掺杂 能带结构 变化 突变异质结 电流 影响 Currents HBTs Doping Induced Narrowing Bandgap 体分布 性能分析 实验测量 差别 结果 计算 分布模型 研究 |
| 文章编号： | 0253-4177(2006)01-0110-05 |
| 收稿时间： | 06 21 2005 12:00AM |
| 修稿时间： | 07 30 2005 12:00AM |
Effects of Bandgap Narrowing Induced by heavy Doping in Abrupt HBTs on Their Currents |
| |
| Zhou Shouli,Cui Hailin,Huang Yongqing and Ren Xiaomin.Effects of Bandgap Narrowing Induced by heavy Doping in Abrupt HBTs on Their Currents[J].Chinese Journal of Semiconductors,2006,27(1):110-114. |
| |
| Authors: | Zhou Shouli Cui Hailin Huang Yongqing and Ren Xiaomin |
| |
| Affiliation: | Beijing University of Posts and Telecommunications,Beijing 100876,China;Beijing University of Posts and Telecommunications,Beijing 100876,China;Beijing University of Posts and Telecommunications,Beijing 100876,China;Beijing University of Posts and Telecommunications,Beijing 100876,China |
| |
| Abstract: | The bandgap narrowing is distributed between the conduction and valence bands,according to the Jain-Roulston model,and its effects on the currents of abrupt AlGaAs/GaAs HBTs including the self-heating effect,are analyzed.By comparison experimental results with the results of other distribution models of BGN commonly used in commercial software,it can be concluded that using an accurate dopant-dependent BGN distribution model between bands is very important. |
| |
| Keywords: | HBT heavy doping effects bandgap narrowing Jain-Roulston model |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
