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基于90nmCMOS工艺的低功耗宽带压控振荡器设计
引用本文:李竹,王志功,李智群,李芹,刘法恩.基于90nmCMOS工艺的低功耗宽带压控振荡器设计[J].半导体学报,2014,35(12):125013-6.
作者姓名:李竹  王志功  李智群  李芹  刘法恩
作者单位:Institute of RF- & OE-ICs Southeast University;Nanjing University of Science and Technology
基金项目:(项目号:60901012)的资助。;国家高技术研究发展计划;国家重点基础研究规划项目;国家自然科学基金
摘    要:A low power VCO with a wide tuning range and low phase noise has been designed and realized in a standard 90 nm CMOS technology. A newly proposed current-reuse cross-connected pair is utilized as a negative conductance generator to compensate the energy loss of the resonator. The supply current is reduced by half compared to that of the conventional LC-VCO. An improved inversion-mode MOSFET(IMOS) varactor is introduced to extend the capacitance tuning range from 32.8% to 66%. A detailed analysis of the proposed varactor is provided. The VCO achieves a tuning range of 27–32.5 GHz, exhibiting a frequency tuning range(FTR) of 18.4%and a phase noise of –101.38 d Bc/Hz at 1 MHz offset from a 30 GHz carrier, and shows an excellent FOM of –185d Bc/Hz. With the voltage supply of 1.5 V, the core circuit of VCO draws only 2.1 m A DC current.

关 键 词:tuning  offset  capacitance  oscillator  resonator  conductance  compensate  transistor  utilized  switched

IC design of low power, wide tuning range VCO in 90 nm CMOS technology
Li Zhu,Wang Zhigong,Li Zhiqun,Li Qin and Liu Faen.IC design of low power, wide tuning range VCO in 90 nm CMOS technology[J].Chinese Journal of Semiconductors,2014,35(12):125013-6.
Authors:Li Zhu  Wang Zhigong  Li Zhiqun  Li Qin and Liu Faen
Affiliation:Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Nanjing University of Science and Technology, Nanjing 210094, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China
Abstract:A low power VCO with a wide tuning range and low phase noise has been designed and realized in a standard 90 nm CMOS technology. A newly proposed current-reuse cross-connected pair is utilized as a negative conductance generator to compensate the energy loss of the resonator. The supply current is reduced by half compared to that of the conventional LC-VCO. An improved inversion-mode MOSFET (IMOS) varactor is introduced to extend the capacitance tuning range from 32.8% to 66%. A detailed analysis of the proposed varactor is provided. The VCO achieves a tuning range of 27-32.5 GHz, exhibiting a frequency tuning range (FTR) of 18.4% and a phase noise of-101.38 dBc/Hz at 1 MHz offset from a 30 GHz carrier, and shows an excellent FOM of-185 dBc/Hz. With the voltage supply of 1.5 V, the core circuit of VCO draws only 2.1 mA DC current.
Keywords:CMOS  microwave  millimeter wave  IMOS varactor  phase noise  voltage controlled oscillators
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