碳化硅电力电子器件及其制造工艺新进展

评述了各种碳化硅电力电子器件研究开发的最新进展及其发展前景,指出碳化硅的优势不仅仅限于能提高功率开关器件的电压承受能力、高温承受能力和兼顾频率与功率的能力,还在于能大幅度降低器件的功率损耗,使电力电子技术的节能优势得以更加充分地发挥.针对碳化硅材料的特殊性和实现碳化硅器件卓越性能的需要,分析了器件工艺当前亟待解决的问题.

Recent Progress in SiC Power Elect ronic Devices and Fabrication Process

The huge potential of semiconductor SiC for improving performance of power devices has been initially realized by the commercialization of SiC power Schottky barrier diodes in the first year of the new century,which well predicts a revolutionary progress of power electronics in the near future.The current state of the art and the future potential of SiC power devices is reviewed in the viewpoint of advanced power electronic technology.It is shown that the advantage of SiC is not only a potential capability to make modern power devices operate at much higher voltages,temperatures and switching frequencies,but also reduce power losses substantially,which makes fuller use of the energy save advantage of power electronic technology.The current issues in SiC device processing technology are also analyzed based on the specific characteristics of SiC materials and realizing the outstanding performances of SiC power devices.