| 碳化硅器件发展概述 |
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| 引用本文： | 黄京才,白朝辉.碳化硅器件发展概述[J].山西电子技术,2011(4):90-91,96. |
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| 作者姓名： | 黄京才 白朝辉 |
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| 作者单位： | 西安卫光科技有限公司; |
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| 摘 要： | 概要介绍了第三代半导体材料碳化硅(SiC)在高温、高频、大功率器件应用方面的优势,结合国际上SiC肖特基势垒二极管,PiN二极管和结势垒肖特基二极管的发展历史,介绍了SiC功率二极管的最新进展,同时对我国宽禁带半导体SiC器件的研究现状及发展方向做了概述及展望。
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| 关 键 词： | 宽禁带半导体 碳化硅 功率二极管 |
The Overview of Development of SiC Device |
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| Huang Jing-cai Bai Zhao-hui.The Overview of Development of SiC Device[J].Shanxi Electronic Technology,2011(4):90-91,96. |
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| Authors: | Huang Jing-cai Bai Zhao-hui |
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| Affiliation: | Huang Jing-cai Bai Zhao-hui (Xi'an Weiguang Science and Technology Co.Ltd,Xi'an Shaanxi 710065,China) |
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| Abstract: | This overview introduces the third generation of semiconductor material silicon carbide(SiC),which advantages at high temperature,high frequency and high power devices are simply reviewed in this paper.The latest progress of SiC power diode is presented based on the international history of the SiC Schottky barrier diodes,PiN diodes and junction barrier Schottky diode.In addition our national research status and development prospects about SiC device are outlined and expected. |
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| Keywords: | wide bandgap semiconductor SiC power diode |
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