| 一种应用于GPS接收机的高线性度SiGe HBT低噪声放大器 |
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| 引用本文： | 罗彦彬,石坚,马成炎,甘业兵,钱敏.一种应用于GPS接收机的高线性度SiGe HBT低噪声放大器[J].半导体学报,2014,35(4):045001-6. |
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| 作者姓名： | 罗彦彬 石坚 马成炎 甘业兵 钱敏 |
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| 摘 要： | A high linearity 1.575 GHz SiGe：HBT low noise amplifier （LNA） for global positioning system applications is described. The bipolar cascoded with an MOSFET LNA was fabricated in a commercial 0.18 μm SiGe BiCMOS process, A resistor bias feed circuit with a feedback resistor was designed for the LNA input transistor to improve its intermodulation and compression performance. The packaged chip tested on board has displayed a noise figure of 1. I 1 dB, a power gain of 18 dB, an output 1 dB compression point of ＋7.8 dBm and an input third-order intercept point of ＋1.8 dBm. The chip occupies a 500 × 560μm^2 area and consumes 3.6 mA from a 2.85 V power supply.
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| 关 键 词： | SiGe 高线性度 LNA GPS接收器 HBT BiCMOS工艺 低噪声放大器 全球定位系统 |
| 收稿时间： | 8/1/2013 12:00:00 AM |
A high linearity SiGe HBT LNA for GPS receiver |
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| Luo Yanbin,Shi Jian,Ma Chengyan,Gan Yebing and Qian Min.A high linearity SiGe HBT LNA for GPS receiver[J].Chinese Journal of Semiconductors,2014,35(4):045001-6. |
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| Authors: | Luo Yanbin Shi Jian Ma Chengyan Gan Yebing and Qian Min |
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| Affiliation: | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Hangzhou Zhongke Microelectronics Co. Ltd., Hangzhou 310053, China;Jiaxing Lianxing Microelectronics Co. Ltd., Jiaxing 314000, China;Hangzhou Zhongke Microelectronics Co. Ltd., Hangzhou 310053, China;Jiaxing Lianxing Microelectronics Co. Ltd., Jiaxing 314000, China |
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| Abstract: | LNA noise figure high linearity OPldB IIP3 SiGe HBT |
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| Keywords: | LNA noise figure high linearity OPldB IIP3 SiGe HBT |
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