| 一款采用跨导增强技术的新型宽带低噪声放大器 |
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| 引用本文： | 陈亮,李智群,曹佳,吴晨健,张萌.一款采用跨导增强技术的新型宽带低噪声放大器[J].半导体学报,2014,35(1):015002-7. |
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| 作者姓名： | 陈亮 李智群 曹佳 吴晨健 张萌 |
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| 基金项目： | 国家“863项目”：No. 2007AA01Z2A7 |
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| 摘 要： | A new broadband low-noise amplifier （LNA） is proposed. The conventional common gate （CG） LNA exhibits a relatively high noise figure, so active gin-boosting technology is utilized to restrain the noise generated by the input transistors and reduce the noise figure. Theory, simulation and measurement are shown. An implemented prototype using 0.13 μm CMOS technology is evaluated using on-wafer probing. S11 and S22 are below -10 dB across 0.1-5 GHz. Measurements also show a gain of 18.3 dB with a 3 dB bandwidth from 100 MHz to 2.1 GHz and an ⅡP3 of-7 dBm at 2 GHz. The measured noise figure is better than 2.5 dB below 2.1 GHz, is better than 4.5 dB below 5 GHz, and at 500 MHz, it gets its minimum value 1.8 dB. The LNA consumes 9 mA from 1.5 V supply and occupies an area of 0.04 mm^2.
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| 关 键 词： | 宽带低噪声放大器 推技术 噪声系数 CMOS技术 GHz 杜松子酒 LNA 千兆赫 |
| 收稿时间： | 4/8/2013 12:00:00 AM |
A new wideband LNA using a gm-boosting technique |
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| Chen Liang,Li Zhiqun,Cao Ji,Wu Chenjian and Zhang Meng.A new wideband LNA using a gm-boosting technique[J].Chinese Journal of Semiconductors,2014,35(1):015002-7. |
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| Authors: | Chen Liang Li Zhiqun Cao Ji Wu Chenjian and Zhang Meng |
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| Affiliation: | Institute of RF- & OE- ICs, Southeast University, Nanjing 210096, China;RFIC and System Engineering Research Center of Ministry of Education of China, Southeast University, Nanjing 210096, China;Jiangsu Provincial Key Laboratory of Sensor Network Technology, Wuxi 214135, China;Institute of RF- & OE- ICs, Southeast University, Nanjing 210096, China;RFIC and System Engineering Research Center of Ministry of Education of China, Southeast University, Nanjing 210096, China;Jiangsu Provincial Key Laboratory of Sensor Network Technology, Wuxi 214135, China;Institute of RF- & OE- ICs, Southeast University, Nanjing 210096, China;RFIC and System Engineering Research Center of Ministry of Education of China, Southeast University, Nanjing 210096, China;Jiangsu Provincial Key Laboratory of Sensor Network Technology, Wuxi 214135, China;Institute of RF- & OE- ICs, Southeast University, Nanjing 210096, China;RFIC and System Engineering Research Center of Ministry of Education of China, Southeast University, Nanjing 210096, China;Jiangsu Provincial Key Laboratory of Sensor Network Technology, Wuxi 214135, China;Institute of RF- & OE- ICs, Southeast University, Nanjing 210096, China;RFIC and System Engineering Research Center of Ministry of Education of China, Southeast University, Nanjing 210096, China;Jiangsu Provincial Key Laboratory of Sensor Network Technology, Wuxi 214135, China |
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| Abstract: | broadband LNA gm-boosting CMOS |
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| Keywords: | broadband LNA gm-boosting CMOS |
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