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a-Si/μc-Si叠层电池中间层材料SiO_x:H制备研究
引用本文:岳强.a-Si/μc-Si叠层电池中间层材料SiO_x:H制备研究[J].光电子.激光,2010(2):231-234.
作者姓名:岳强
作者单位:南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室;
基金项目:国家高技术研究发展规划资助项目(2007AA05Z436,2009AA050602);;国家重点基础研究发展规划资助项目(2006CB202602,2006CB202603);;国家自然科学基金资助项目(60506003);;科技部国际合作重点资助项目(2006DFA62390);;天津科技支撑资助项目(08ZCKFGX03500);;教育部新世纪人才计划资助项目;;南开大学博士启动基金资助项目(J02031)
摘    要:为提高a-Si/μc-Si叠层太阳电池的效率,采用射频等离子体增强化学气相沉积(RF-PECVD)技术,制备了系列n型掺磷硅氧(SiOx:H)薄膜作为中间层,研究了CO2/Si H4气体流量比、沉积功率和PH3掺杂浓度等工艺参数对材料光电特性的影响,获得了折射率、电导率和禁带宽度能够在较大范围内调控的SiOx:H薄膜。

关 键 词:a-Si/μc-Si叠层太阳电池  中间反射层  SiOx:H薄膜

Fabrication and research of SiO_x:H thin film as an interlayer in amorphous/microcrystalline silicon solar cells
YUE Qiang.Fabrication and research of SiO_x:H thin film as an interlayer in amorphous/microcrystalline silicon solar cells[J].Journal of Optoelectronics·laser,2010(2):231-234.
Authors:YUE Qiang
Affiliation:Institute of Photo-electronics Thin Film Devices and Technique of Nankai University;Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin;Key Laboratory of Opto-electronic Information Science and Technology;Ministry of Education;Tianjin 300071;China
Abstract:To improve the stable efficiency of a micromorph silicon tandem solar cell,series of phosphorous doped silicon oxide films were fabricated by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD).By varying the influences of process parameters,such as the CO2/SiH4 gas flow ratio,deposition power and phosphorus doping ratio,on the material optical and electrical properties are discussed.The silicon oxide films whose properties can be controlled in a wide range are obtained.
Keywords:micromorph silicon tandem solar cells  intermediate reflector  doped silicon oxide  
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