| InP基PIN HBT光电集成器件的设计与研制 |
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| 引用本文： | 崔海林,任晓敏,李轶群,苗昂,黄辉,黄永清.InP基PIN HBT光电集成器件的设计与研制[J].光电子．激光,2008,19(3):285-288. |
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| 作者姓名： | 崔海林 任晓敏 李轶群 苗昂 黄辉 黄永清 |
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| 作者单位： | 1. 北京邮电大学光通信与光波技术教育部重点实验室,北京,100876;首都师范大学物理系,北京,100037
2. 北京邮电大学光通信与光波技术教育部重点实验室,北京,100876 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)
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国家自然科学基金
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教育部跨世纪优秀人才培养计划 |
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| 摘 要： | 对用于光电集成电路(OEIC)的InP基异质结双极性晶体管(HBT)及PIN探测器进行了设计与研制,讨论了堆叠层结构和共享层结构2种常见的集成方式,通过实验比较,确定了共享层结构器件性能更好,并对此结构进行了改进。所研制的HBT截止频率达到30 GHz,直流增益达到100;PIN的3 dB带宽达到了15 GHz。详细介绍了器件结构及工艺流程。
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| 关 键 词： | 光电集成电路(OEIC) 异质结双极性晶体管(HBT) PIN |
| 文章编号： | 1005-0086（2008）03-0285-04 |
| 收稿时间： | 2007-03-02 |
| 修稿时间： | 2007-06-10 |
Design and fabrication of InP based PIN HBT for OEIC |
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| CUI Hai-lin,REN xiao-min,LI Yi-qun,MIAO Ang,HUANG Hui,HUANG Yong-qing.Design and fabrication of InP based PIN HBT for OEIC[J].Journal of Optoelectronics·laser,2008,19(3):285-288. |
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| Authors: | CUI Hai-lin REN xiao-min LI Yi-qun MIAO Ang HUANG Hui HUANG Yong-qing |
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| Affiliation: | CUI Hai-lin1,2**,REN xiao-min1,LI Yi-qun1,MIAO Ang1,HUANG Hui1,HUANG Yong-qing1(1.Beijing University of Posts , Telecommunications,Beijing 100876,China,2.Capital Normal University,Beijing 100037,China) |
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| Abstract: | We design and fabricate the InP based(heterojunction bipolar transistor(HBT) and PIN photodetector used for optoelectronic integrated circuit(OEIC).The stacked layer structure and the share layer structure are discussed.From the results of the experiments,we find that the share layer structure has better performance.An optimized HBT+PIN layer is made which has better characteristics,the transit frequency of HBT is 30 GHz and the current gain is 100.The 3 dB bandwidth of PIN photodetector is 15 GHz. |
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| Keywords: | optoelectronic inegrated circuit(OEIC) heterojunction bipolar transistor(HBT) PIN |
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