| 用于光电集成的InP基HBT新结构 |
| |
| 引用本文： | 崔海林,任晓敏,黄辉,李轶群,王文娟,黄永清.用于光电集成的InP基HBT新结构[J].光电子．激光,2007,18(3):263-266. |
| |
| 作者姓名： | 崔海林 任晓敏 黄辉 李轶群 王文娟 黄永清 |
| |
| 作者单位： | 北京邮电大学光通讯研究中心,北京,100876 |
| |
| 基金项目： | 国家重点基础研究发展计划(973计划)
,
高等学校博士学科点专项科研项目 |
| |
| 摘 要： | 对用于光电集成(OEIC)的InP基异质结双极性晶体管(HBT)进行了分析,提出了一种新的集电区外延结构,该结构是在单HBT(SHBT)的集电区与次集电区间加入特定厚度与掺杂浓度的p-InGaAs层和n-InP层,既适用于集成光探测器,又较好地解决了SHBT反向击穿电压低、传统双HBT(DHBT)电子堆积效应等问题,并具有外延层生长简单、集电区电子漂移速率高等优点.
|
| 关 键 词： | 光电集成(OEIC) 异质结双极性晶体管(HBT) 复合集电区 |
| 文章编号： | 1005-0086（2007）03-0263-04 |
| 收稿时间： | 2006/4/26 0:00:00 |
| 修稿时间： | 2006-04-262006-07-04 |
A Novel Structure of InP Based HBT for OEIC |
| |
| CUI Hai-lin,REN Xiao-min,HUANG Hui,LI Yi-qun,WANG Wen-juan,HUANG Yong-qing.A Novel Structure of InP Based HBT for OEIC[J].Journal of Optoelectronics·laser,2007,18(3):263-266. |
| |
| Authors: | CUI Hai-lin REN Xiao-min HUANG Hui LI Yi-qun WANG Wen-juan HUANG Yong-qing |
| |
| Affiliation: | Optical Communication Research Center,Beijing University of Posts and Telecommunications ,Beijing 100876,China |
| |
| Abstract: | The InP based HBT(heterojunction bipolar transistor used for OEIC(optoelectronic integrated circuits)is analysed,and a novel collector layer structure is proposed,which is achieved by introducing p-InGaAs layer and N-InP layer with specific thickness and doping level between the collector and subcollector of SHBT(single heterojunction bipolar transistor).This composite collector structure is suitable for integrated pin photodetector and solves the poor breakdown voltage of SHBT and the electron blocking efforts of traditional DHBT(double heterojunction bipolar transistor).In addition,the epitaxy layer of this structure is easy to grow and the electron velocity of collector is high. |
| |
| Keywords: | optoelectronic integrated circuit(OEIC) heterojunction bipolar transistor(HBT) composite collector |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《光电子．激光》浏览原始摘要信息 |
|
点击此处可从《光电子．激光》下载全文 |
|
