| 多晶硅薄膜晶体管的表面氮钝化技术 |
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| 引用本文： | 曾祥斌,JOHNNY K O Sin,徐重阳,饶瑞,刘世建.多晶硅薄膜晶体管的表面氮钝化技术[J].压电与声光,2001,23(2):142-144,151. |
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| 作者姓名： | 曾祥斌 JOHNNY K O Sin 徐重阳 饶瑞 刘世建 |
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| 作者单位： | 1. 华中科技大学电子科学与技术系,
2. 香港科技大学电气与电子工程系, |
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| 摘 要： | 采用N2O和NH3等离子钝化技术对多晶硅薄膜表面和栅氧表面进行了钝化处理。实验结果表明，该技术能有效降低多晶硅薄膜的界面态密度，提高多晶硅薄膜晶体管性能，二次离子质谱分析表明在p-Si/SiO界面有氮原子富积，说明生成了强的Si-N键。
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| 关 键 词： | 多晶硅薄膜 薄膜晶体管 表面钝化 氮等离子钝化 |
| 文章编号： | 1004-2474(2001)02-0142-03 |
Surface Passivation of
Poly-Si Thin Film Transistors Using Nitride Plasma |
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| ZENG Xiang-bin,JOHNNY K O Sin,XU Zhong-yang,RAO Rui,LIU Shi-jian.Surface Passivation of
Poly-Si Thin Film Transistors Using Nitride Plasma[J].Piezoelectrics & Acoustooptics,2001,23(2):142-144,151. |
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| Authors: | ZENG Xiang-bin JOHNNY K O Sin XU Zhong-yang RAO Rui LIU Shi-jian |
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| Affiliation: | ZENG Xiang-bin1,JOHNNY K O Sin2,XU Zhong-yang1,RAO Rui1,LIU Shi-jian1 |
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| Abstract: | The surfaces of poly-Si thin film and gate oxide of thin film transistors were passivated using N 2O/NH 3 plasma.The interface state density of poly-Si thin film was reduced and the properties of poly-Si thin film transistors were improved using this technique.SIMS results showed that large amounts of nitride atoms pile-up at the SiO 2/poly-Si thin film interface and form the stronger Si-N bond with the silicon dangling bond. |
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| Keywords: | poly-Si thin film thin film transistor surface passivation nitride plasma passivation |
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