| BST材料在DRAM电容中的应用研究 |
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| 引用本文： | 肖斌,汪家友,苏祥林,杨银堂.BST材料在DRAM电容中的应用研究[J].压电与声光,2005,27(3):287-290. |
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| 作者姓名： | 肖斌 汪家友 苏祥林 杨银堂 |
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| 作者单位： | 西安电子科技大学,微电子所,陕西,西安,710071 |
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| 摘 要： | 钛酸锶钡(BST)高介电常数材料被普遍认为是最有前途的DRAM电容介质材料。BST作为DRAM电容介质材料的研究已有多年，到目前为止取得了不少突破性的进展。介绍了BST的材料特性和堆积型电容结构电极、埋层材料的设计考虑，探讨了BST膜的制备、掺杂及刻蚀工艺技术。
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| 关 键 词： | 钛酸锶钡 动态随机存储器 介质材料 堆积型电容 |
| 文章编号： | 1004-2474(2005)03-0287-04 |
| 修稿时间： | 2003年8月14日 |
Studies on Applications of BST Thin Film for DRAM Capacitors |
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| XIAO Bin,WANG Jia-you,SU Xiang-Lin,YANG Ying-tang.Studies on Applications of BST Thin Film for DRAM Capacitors[J].Piezoelectrics & Acoustooptics,2005,27(3):287-290. |
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| Authors: | XIAO Bin WANG Jia-you SU Xiang-Lin YANG Ying-tang |
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| Abstract: | BST thin films,characterized by high permittivity,has been recognized as an ideal material for DRAM capacitor dielectric.The study on BST as the material of DRAM capacitor dielectric began many years ago.So far ,Many important improvements have been achieved.In this paper,The feasibility of BST thin films are described,such are the design considerations for the electrode and barrier materials used in stacked capacitor structures.Technicals of preparation,dope and fabrication processes are presented. |
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| Keywords: | barium strontium titanate dynamic random-access memory dielectric materials stacked capacitor |
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