| CeO_2掺杂引起SnO_2压敏电阻的晶粒尺寸效应 |
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| 引用本文： | 滕树新,王矜奉,陈洪存,苏文斌,臧国忠,高建鲁.CeO_2掺杂引起SnO_2压敏电阻的晶粒尺寸效应[J].电子元件与材料,2003,22(11):31-34. |
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| 作者姓名： | 滕树新 王矜奉 陈洪存 苏文斌 臧国忠 高建鲁 |
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| 作者单位： | 1. 山东大学物理与微电子学院,山东,济南,250100
2. 济南安太电子研究所,山东,济南,250010 |
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| 基金项目： | 国家理科基地创建名牌课程项目，， |
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| 摘 要： | 研究了掺CeO2对SnO2 Co2O3 Ta2O5压敏电阻器性能的影响。研究发现:随着x(CeO2)从0增加到1%,压敏电压从190 V/mm增加到205 V/mm,相对介电常数从3 317减小到2 243,晶粒平均尺寸从12.16 mm减小到6.23 mm,在晶界上的Ce4+阻碍了SnO2晶粒的生长。为了解释样品电学非线性性质的起源,笔者提出了SnO2 Co2O3 Ta2O5 CeO2晶界缺陷势垒模型。同时,对该压敏电阻器进行了等效电路分析,试验测量与等效电路分析结果相符。
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| 关 键 词： | 压敏材料 二氧化锡 电学性能 缺陷势垒模型 |
| 文章编号： | 1001-2028(2003)11-0031-04 |
Grain-size-effect Induced by Doping CeO2 in SnO2 Varistors |
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| TENG Shu-xin,WANG Jin-feng,CHEN Hong-cun,SU Wen-bin,ZANG Guo-zhong,GAO Jian-lu.Grain-size-effect Induced by Doping CeO2 in SnO2 Varistors[J].Electronic Components & Materials,2003,22(11):31-34. |
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| Authors: | TENG Shu-xin WANG Jin-feng CHEN Hong-cun SU Wen-bin ZANG Guo-zhong GAO Jian-lu |
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| Affiliation: | TENG Shu-xin1,WANG Jin-feng1,CHEN Hong-cun1,SU Wen-bin1,ZANG Guo-zhong1,GAO Jian-lu2 |
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| Abstract: | The effect of CeO2 on the electrical properties of (Ta, Co)-doped SnO2 varistors were investigated .The substitution of Sn4+ with Ce4+ lifts the varistor densities greatly. It is found that the varistor voltage increases from 190 V/mm to 205 V/mm, the relative dielectric constant decreases from 3 317 to 2 443, and the SnO2 grain size decreases from 12.16 mm to 6.23 mm when CeO2 concentration increases from 0 to 1 mol%. The cause of the reduction of the grain size is that the added Ce4+ segregated at grain boundaries hinders the SnO2 grains from merging each other. To illustrate the origin of the electrical nonlinearity for (Ta, Co, Ce)-doped SnO2 varistors, a grain-boundary defect barrier model is proposed. |
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| Keywords: | varistor material tin oxide electrical properties barrier models |
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