|
|||||
|
|
| 退火对Zn扩散的影响及其在InGaAs探测器中的应用 | |
| 引用本文： | 邓洪海,魏鹏,朱耀明,李淘,夏辉,邵秀梅,李雪,缪国庆,张永刚,龚海梅.退火对Zn扩散的影响及其在InGaAs探测器中的应用[J].红外与激光工程,2012,41(2):279-283. |
| 作者姓名： | 邓洪海 魏鹏 朱耀明 李淘 夏辉 邵秀梅 李雪 缪国庆 张永刚 龚海梅 |
| 作者单位： | 1. 中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083;中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海200083;中国科学院研究生院,北京100049 2. 中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083;中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海200083 3. 中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083;中国科学院研究生院,北京100049 4. 中国科学院长春光学精密机械与物理研究所激发态物理重点实验室,吉林长春,130033 5. 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海,200050 |
| 基金项目： | 国家自然科学基金重点资助项目(61007067) |
| 摘 要： | 采用闭管扩散方式,对不同结构的异质结外延材料In0.81Al0.19As/In0.81Ga0.19As、InAs0.6P0.4/In0.8Ga0.2As、InP/In0.53Ga0.47As实现了Zn元素的P型掺杂,采用扫描电容显微技术(SCM)和二次离子质谱(SIMS)研究了在芯片制备中高温快速热退火(RTP)处理环节对p-n结结深的影响。结果表明:由于在这3种异质结外延材料中掺杂的Zn元素并未完全激活,导致扩散深度明显大于p-n结结深;高温快速热退火处理并不会显著影响结深的变化,扩散完成后的p-n结深度可以近似为器件最终的p-n结结深;计算了530℃下Zn在In0.81Al0.19As、InAs0.6P0.4、InP中的扩散系数D分别为1.327×10-12cm2/s、1.341 10-12cm2/s、1.067×10-12cm2/s。 |
| 关 键 词： | 快速热退火 Zn扩散 结深 InGaAs |
Annealing process on Zn diffusion and its application in fabrication of InGaAs detectors |
|
| Deng Honghai , Wei Peng , Zhu Yaoming , Li Tao , Xia Hui , Shao Xiumei , Li Xue , Miao Guoqing , Zhang Yonggang , Gong Haimei.Annealing process on Zn diffusion and its application in fabrication of InGaAs detectors[J].Infrared and Laser Engineering,2012,41(2):279-283. | |
| Authors: | Deng Honghai Wei Peng Zhu Yaoming Li Tao Xia Hui Shao Xiumei Li Xue Miao Guoqing Zhang Yonggang Gong Haimei |
| Affiliation: | 1,2(1.State Key Laboratories of Transducer Technology,Chinese Academy of Sciences,Shanghai 200083,China;2.Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 20083,China;3.State Key Laboratories of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;4.Graduate University of the Chinese Academy of Sciences,Beijing 100049,China; 5.Key Laboratory of Excited State Processes,Changchun Institute of Optics Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China;6.State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China) |
| Abstract: | Zn diffusion to form P type doped structure with sealed-ampoule method on different kinds of heterostructure epitaxial materials was carried out,such as In0.81Al0.19As/In0.81Ga0.19As,InAs0.6P0.4/In0.8Ga0.2As and InP/In0.53Ga0.47As.Scanning capacitance microscopy(SCM) and secondary ion mass spectroscopy(SIMS) techniques were adopted to investigate the process of rapid thermal annealing process(RTP) on p-n junction depth variation in the process of the detectors fabrication.The result indicates that due to the doped Zn in these three heterostructure epitaxial materials is not completely activated,the diffusion depth is deeper than the p-n junction depth in evidence.And RTP has almost no effect on junction depth variation which implies that the p-n junction depth after the diffusion process could be considered to the ultimate p-n junction depth of the detector.The diffusion coefficients D of Zn into In0.81Al0.19As,InAs0.6P0.4 and InP under 530 ℃ are figured out,which is 1.327×10-12 cm2/s,1.341×10-12 cm2/s,1.067×10-12 cm2/s respectively. |
| Keywords: | rapid thermal annealing process Zn diffusion junction depth InGaAs |
| 本文献已被 CNKI 万方数据 等数据库收录！ | |