| ICP刻蚀InGaAs的微观损伤机制研究 |
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| 引用本文： | 程吉凤,朱耀明,唐恒敬,李雪,邵秀梅,李淘.ICP刻蚀InGaAs的微观损伤机制研究[J].红外与激光工程,2013,42(8):2186-2189. |
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| 作者姓名： | 程吉凤 朱耀明 唐恒敬 李雪 邵秀梅 李淘 |
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| 作者单位： | 1.中国科学院上海技术物理研究所 传感技术国家重点实验室,上海 200083; |
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| 摘 要： | 为获得低损伤、稳定性好的感应耦合等离子体（ICP）刻蚀InGaAs探测器台面成型工艺，采用Raman光谱技术和X射线衍射（XRD）技术，初步研究了Cl2/N2气氛刻蚀InGaAs的主要损伤机制，确定以晶格缺陷损伤为主；并采用微波反射光电导衰退（-PCD）法对不同处理工艺下表面的缺陷损伤进行了表征和分析，结果表明刻蚀表面湿法腐蚀和硫化的方法可在一定程度上减小表面的缺陷损伤和断键，但是存在一些深层次的缺陷。
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| 关 键 词： | 感应耦合等离子体 铟镓砷 Raman光谱 XRD 刻蚀损伤 |
| 收稿时间： | 2012-12-05 |
Microcosmic damage mechanism of inductively couple plasma etching for InGaAs |
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| Cheng Jifeng
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Zhu Yaoming
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Tang Hengjing
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Li Xue
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Shao Xiumei
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Li Tao.Microcosmic damage mechanism of inductively couple plasma etching for InGaAs[J].Infrared and Laser Engineering,2013,42(8):2186-2189. |
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| Authors: | Cheng Jifeng Zhu Yaoming Tang Hengjing Li Xue Shao Xiumei Li Tao |
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| Affiliation: | 1.State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;2.Key Laboratoies of Infrared Imaging Mateials and Detectors,Chinese Academy of Sciences,Shanghai 200083,China |
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| Abstract: | In order to obtain a method for low damage and steaty mesa structures, the damage mechanism of InGaAs by Cl2/N2 ICP etching was studied in this paper. The surfaces of InGaAs before and after etching was investigated using Raman spectroscopy and X-ray diffraction(XRD) technology. The results indicate that lattice defects are the main damages. The surface damage of different treatment process was characterised and analysed by the method of microwave photoconductivity decay measurement. The results show that the surface defects and broken bonds of etching damage are decreased to a certain extent by wet etching and surface sulfur treatment, but deep defects still cannot be avoided. |
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| Keywords: | ICP InGaAs Raman spectrum XRD etch damage |
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