| InGaAsP单量子阱半导体微盘激光器研究 |
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| 引用本文： | 章蓓,王若鹏.InGaAsP单量子阱半导体微盘激光器研究[J].红外与毫米波学报,1995,14(4):253-256. |
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| 作者姓名： | 章蓓 王若鹏 |
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| 作者单位： | 北京大学物理系和介观物理国家重点实验室 |
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| 摘 要： | 利用普通的液相外延和微加工技术成功地制备了ＩｎＧａＡｓＰ单量子陆微盘激光器，并从实验上观测到远低于普遍激光器阈值条件下的单模振荡，证实了微盘激光器中微盘很强的模式选择作用，反映了微盘的微腔特征。
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| 关 键 词： | 微盘激光器 半导体激光器 量子阱 异质结 铟镓磷 |
THE STUDY ON InGaAsP SINGLE QUANTUM WELL SEMICONDUCTOR MICRODISK LASERS. |
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| Zhang Bei,Wang Ruopeng,Ding Xiaomin,Yang Zhijian,Dai Lun,Cui Xiaoming,Wang Shumin.THE STUDY ON InGaAsP SINGLE QUANTUM WELL SEMICONDUCTOR MICRODISK LASERS.[J].Journal of Infrared and Millimeter Waves,1995,14(4):253-256. |
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| Authors: | Zhang Bei Wang Ruopeng Ding Xiaomin Yang Zhijian Dai Lun Cui Xiaoming Wang Shumin |
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| Abstract: | he InGaAsP single quantum well microdisk lasers were successfully fabricated by using the conventional liquid phase epitaxy and micro fabrication techniques for the first time.The single mode oscillation in the condition of a much lower threshoed than that of conventional laser diode was observed experimentally.It demonstrated strong mode-selection capability of the microdisk,reflecting the character of a microcavity. |
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| Keywords: | microdisk laser semiconductor laser quantum well InGaAsP/InP heterostructure |
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