| 硅微机械电子隧穿红外探测器 |
| |
| 引用本文： | 杨拥军,魏同立,李立杰,徐永青,梁春广,赵彦军.硅微机械电子隧穿红外探测器[J].固体电子学研究与进展,2000,20(3):244-249. |
| |
| 作者姓名： | 杨拥军 魏同立 李立杰 徐永青 梁春广 赵彦军 |
| |
| 作者单位： | 1. 东南大学微电子中心,南京,210096
2. 信息产业部电子十三所,石家庄,050051 |
| |
| 摘 要： | 介绍了一种新型的非制冷高灵敏度硅微机械电子隧穿红外探测器的工作原理 ,详细描述了这种红外探测器的设计思想和制作工艺 ,采用微机械体硅加工的三层硅结构制作出探测器原理样品 ,通过和反馈电路 (包括前置放大电路 )连接测试表明 :电子隧穿位移传感器部分的分辨率可达 10 -4 nm/ Hz,红外探测器样品已能敏感红外信号。
|
| 关 键 词： | 微机械 隧穿 红外探测器 非制冷 |
| 文章编号： | 1000-3819(2000)03-0244-06 |
| 修稿时间： | 1999-11-29 |
Silicon Micromachined Electron Tunneling Infrared Detector |
| |
| Yang Yongjun,Wei Tongli,Li Lijie,Xu Yongqing,Zhao Yanjun,Liang Chunguang.Silicon Micromachined Electron Tunneling Infrared Detector[J].Research & Progress of Solid State Electronics,2000,20(3):244-249. |
| |
| Authors: | Yang Yongjun Wei Tongli Li Lijie Xu Yongqing Zhao Yanjun Liang Chunguang |
| |
| Affiliation: | Yang Yongjun
,Wei Tongli
(Microelectronic Center, Southeast University, Nanjing , 210096 ,CHN)Li Lijie
,Xu Yongqing
,Zhao Yanjun
,Liang Chunguang
(13 th Electronic Institute Ministry of Information Industry ,Shijiazhuang , 050051, CHN) |
| |
| Abstract: | The working principle of a novel,uncooled,high sensitivity silicon micromachined electron tunneling infrared detector is introduced.The design idea and fabrication processes of this infrared detector are described in detail.A prototype with sandwich structure has been fabricated using silicon bulk micromachining process.Tests together with the feedback circuit show that the resolution of the electron tunneling displacement transducer is up to 10 -4 nm/Hz and the infrared detector prototype has been able to sense infrared signal. |
| |
| Keywords: | micromachine tunneling infrared detector uncool |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
