Possible relaxation and conduction mechanism in W6+doped SrBi4Ti4O15 ceramic |
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| Affiliation: | 1. Department of Physics and Astronomy, National Institute of Technology, Rourkela, Odisha 769008, India;2. Department of Physics, C.V. Raman College of Engineering, Bhubaneswar, Odisha 752054, India;1. School of Physics and Electronic Science, Hubei University, Key Laboratory of Ferro & Piezoelectric Materials and Devices of Hubei Province, Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Wuhan 430062, China;2. School of Materials Science and Engineering, Hubei University, Wuhan 430062, China;1. Department of Information Science and Technology, Wenhua College, Key Laboratory of Ferro & Piezoelectric Materials and Devices of Hubei Province, Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Wuhan 430062, PR China;2. School of Physics and Electronic Science, Hubei University, Wuhan 430062, PR China;3. School of Materials Science and Engineering, Hubei University, Wuhan 430062, PR China;1. Department of Physics & Astrophysics, University of Delhi, Delhi 110007, India;2. Electroceramics Group, Solid State Physics Laboratory, Timarpur, Delhi 110054, India;3. Laser & Spectroscopy Laboratory, Department of Applied Physics, Indian School of Mines, Dhanbad 826 004, Jharkhand, India;1. Key Laboratory of Ferro & Piezoelectric Materials and Devices of Hubei Province, Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Key Laboratory of Green Preparation and Application for Functional Materials, Ministry of Education, and School of Physics and Electronic Science, Hubei University, Wuhan 430062, PR China;2. School of Materials Science and Engineering, Hubei University, Wuhan 430062, PR China;3. The State Key Laboratory of Refractories and Metallurgy,Wuhan University of Science and Technology, Wuhan 430081, PR China;1. Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, 4800 Caoan road, Shanghai, 201804, China;2. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China;3. University of Chinese Academy of Sciences, Beijing, 100049, China;4. Department of Engineering Mechanics and Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, School of Aeronautics and Astronautics, Zhejiang University, Zheda Road 38, Hangzhou, Zhejiang, 310027, China |
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| Abstract: | Tungsten (W) doped Strontium Bismuth Titanate ceramics with general formula SrBi4-2x/3Ti4−xWxO15 (x=0.00,0.02,0.04,0.06,0.08,0.1)] were prepared via solid-state reaction route. The X-ray diffraction analysis confirmed a single phase system with orthorhombic structure for all the prepared samples. The relaxation and conduction mechanism were studied by using impedance spectroscopy analysis. The shifting of Z"max and M"max peak to the higher frequency side in accordance with temperature for all the sample are found to obey the Arrhenius law, indicates the presence of relaxation process in the material. The complex impedance plots showed that both grain and grain boundary are responsible for the conduction mechanism and the grain and grain boundary resistance decreases with temperature showing NTCR behaviour in all the compositions. The kinetic analysis of frequency dependence ac conductivity have been discussed in terms of polaron mechanism and the dc conductivity shows a thermally activated process. We have observed that the charge carrier hopping and doubly ionized oxygen vacancy (Vₒ••) are mainly responsible for the conduction mechanism in the systems. |
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| Keywords: | Impedance Modulus spectroscopy Ac conductivity Activation energy |
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