| TSL门工作机理分析 |
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| 引用本文： | 李云霞,杨曾宪,刘湘文.TSL门工作机理分析[J].电工标准与质量,1999(3). |
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| 作者姓名： | 李云霞 杨曾宪 刘湘文 |
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| 作者单位： | 华北电力大学电子系!保定071003 |
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| 摘 要： | 对TSL门的工作机理分析提出了异议,认为在控制端EN=1时,若数据输入端A、B都为高电平,二极管D截止,这时TSL门与普通TTL与非门电路相同,但当数据输入端A、B有低电平时,二极管D将不截止而是导通,这时TSL门电路不能认为与普通TTL与非门电路相同.
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| 关 键 词： | 截止 饱和 导通箝位 |
Analysis for the Mechanism of TSL Gate |
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| Li Yunxia,Yang Zengxian,Liu Xiangwen.Analysis for the Mechanism of TSL Gate[J].Journal of Changsha University of Electric Power(Natural Science Edition),1999(3). |
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| Authors: | Li Yunxia Yang Zengxian Liu Xiangwen |
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| Affiliation: | Dept. of Electr. Eng. North China Electr. Power Univ. Baoding 071003 |
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| Abstract: | The new view about the mechanism of TSL gate is put forward. That is, when control input EN =1,if data input A and B are of high levels,then the diode D is off.This is same as normal TTL NAND gate. If data input A and B are of low levels, then the diode D is on rather than off.In this case,TSL gate is different from normal TTL NAND gate. |
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| Keywords: | Cut off Saturation On clamp |
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