| 大功率SiC MOSFET驱动电路设计 |
| |
| 引用本文： | 彭咏龙,李荣荣,李亚斌.大功率SiC MOSFET驱动电路设计[J].电测与仪表,2015,52(11). |
| |
| 作者姓名： | 彭咏龙 李荣荣 李亚斌 |
| |
| 作者单位： | 华北电力大学电气与电子工程学院,河北保定,071003 |
| |
| 摘 要： | 在实际工程应用的基础上,针对50k W/1MHz的高频感应加热大功率SiC MOSFET电路要求及SiC MOSFET开关特性进行开发研究。通过对SiC MOSFET的开通过程特性进行详细研究,得出使其可靠、安全驱动的要求,在现有已经成熟应用的Si MOSFET驱动电路基础上对其进行改进,研究适合工作在兆赫范围内的SiC MOSFET驱动电路。并采用双脉冲实验验证所设计驱动电路的基本特性及确定最佳门极电阻参数。
|
| 关 键 词： | SiC MOSFET 开关特性 驱动电路 双脉冲实验 |
| 收稿时间： | 2014/4/25 0:00:00 |
| 修稿时间： | 2014/7/5 0:00:00 |
The Design of High Power SiC MOSFET Driver Circuit |
| |
| PENG Yong-long,LI Rong-rong and LI Ya-bin.The Design of High Power SiC MOSFET Driver Circuit[J].Electrical Measurement & Instrumentation,2015,52(11). |
| |
| Authors: | PENG Yong-long LI Rong-rong and LI Ya-bin |
| |
| Affiliation: | School of Electrical and Electronic Engineering,North China Electric Power University,School of Electrical and Electronic Engineering,North China Electric Power University,School of Electrical and Electronic Engineering,North China Electric Power University |
| |
| Abstract: | On the basis of project, one kind of driver circuit for SiC MOSFET was discussed according to the requirements of 50KW/1MHz high power SiC MOSFET circuit, and the switching characteristics of SiC MOSFET. Through the process of opening the detailed characteristics of SiC MOSFET , come to make reliable, safe driving requirements, to improve it in Si MOSFET driver circuit-based applications on existing mature, research for the job in the megahertz range of SiC MOSFET driver circuit . The basic characteristics of the driver circuit using double-pulse experiments to verify the design and determine the optimal parameters of the gate resistance. |
| |
| Keywords: | SiC MOSFET switching characteristics driver circuit double-pulse experiment |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《电测与仪表》浏览原始摘要信息 |
|
点击此处可从《电测与仪表》下载全文 |
|
