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甚高频对大气压Ar/SiH4/H2混合等离子体粒子密度分布影响的数值模拟(英文)
引用本文:庄娟,桑超峰,吴梦雪,王德真.甚高频对大气压Ar/SiH4/H2混合等离子体粒子密度分布影响的数值模拟(英文)[J].高电压技术,2013(9):2228-2234.
作者姓名:庄娟  桑超峰  吴梦雪  王德真
作者单位:School of Physics and Optoelectronic Technology,Dalian University of Technology
基金项目:Project supported by Liaoning Provincial Natural Science Foundation of China(201202037)
摘    要:To improve the microcrystalline silicon thin film deposition in quality and to increase its microcrystalline silicon content,we numerically investigated the characteristics of homogeneous discharges in hydrogen diluted silane and argon mixed gases at atmospheric pressure using a two-dimensional fluid model.The model takes into account the primary processes of excitation and ionization,sixteen reactions of radicals with radicals in silane/hydrogen/argon discharges,so this model can adequately describe the discharge plasma.The effects of very high frequency(VHF)excitation on the electron density in such discharges are analyzed.The simulation results show that the electron density does not linearly vary with the excitation frequency within from 90150 MHz.he maximum value occurs at an appropriate excitation frequency i.e.the transition frequency.Increasof the excitation frequency would effectively increase the electron density before the transition frequency,but decreases the density afterwards.is.Moreover,the densities of involved particle species,including H2+,H,Ar*,Ar+,SiH3+,SiH3,SiH3,SiH2are closely interrelated.

关 键 词:discharge  plasma  thin  film  deposition  atmospheric  pressure  very  high  frequency  excitation  electron  density  transition  frequency
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