| 氢等离子体加热法晶化a-Si:H薄膜 |
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| 引用本文： | 陈城钊,林璇英,林揆训,余云鹏,余楚迎.氢等离子体加热法晶化a-Si:H薄膜[J].功能材料,2004,35(5):662-664. |
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| 作者姓名： | 陈城钊 林璇英 林揆训 余云鹏 余楚迎 |
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| 作者单位： | 浙江大学,理学院物理系,浙江,杭州,310027;汕头大学,物理系,广东,汕头,515063;广东潮州韩山师范学院,物理系,广东,潮州,521041;汕头大学,物理系,广东,汕头,515063 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)资助项目(G2000028208) |
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| 摘 要： | 利用氢等离子体加热晶化n^ -a-Si：H／a-Si：H薄膜．可以在450℃的衬底温度下制备多晶硅薄膜。采用X射线衍射谱、Raman散射谱和扫描电子显微镜等手段进行表征和分析，研究了不同退火条件对薄膜晶化的影响。结果表明。随着射频氢等离子功率的提高、衬底温度升高和退火时间的增加，薄膜的晶化度呈现出增加趋势。
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| 关 键 词： | 多晶硅薄膜 氢等离子体加热 退火工艺 晶化度 |
| 文章编号： | 1001-9731(2004)05-0662-03 |
| 修稿时间： | 2003年1月16日 |
A study of poly-silicon fims prepared by hydrogen plasma heating |
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| CHEN Cheng-zhao.A study of poly-silicon fims prepared by hydrogen plasma heating[J].Journal of Functional Materials,2004,35(5):662-664. |
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| Authors: | CHEN Cheng-zhao |
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| Affiliation: | CHEN Cheng-zhao~ |
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| Abstract: | Poly-silicon thin films have been obtained by hydrogen plasma heating of n~+-a-Si:H/a-Si:H films prepared by PECVD.The films were characterized and analyzed by Raman,XRD and SEM.The effects of different annealing conditions such as RF power density,substrate temperature and annealing time on crystallization were also investigated.It was shown that the crystallinity increases with the increase in RF power density,substrate temperature or annealing time. |
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| Keywords: | poly-silicon thin film hydrogen plasma heating annealing technology crystallinity |
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