| Bi3.45Eu0.55Ti3O12铁电薄膜的光学性能 |
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| 引用本文： | 阮凯斌,伍广亨,周洪,吴义炳.Bi3.45Eu0.55Ti3O12铁电薄膜的光学性能[J].光电工程,2012,39(7):97-101. |
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| 作者姓名： | 阮凯斌 伍广亨 周洪 吴义炳 |
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| 作者单位： | 1. 福建农林大学机电工程学院,福州,350002
2. 中山大学光电材料与技术国家重点实验室,广州,510275 |
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| 基金项目： | 福建省自然科学基金，福建农林大学青年教师科研基金 |
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| 摘 要： | 采用化学溶液沉积法在石英衬底上制备了Bi3.45Eu0.55Ti3O12(BEuT)铁电薄膜,研究了BEuT薄膜的结构和光学性能。XRD测试结果表明,BEuT薄膜皆形成铋层状钙钛矿型结构,其晶粒尺寸随着退火温度的提高而增加。薄膜的光学透过率曲线显示,在大于500nm的波段BEuT的透过率比较高,而其禁带宽度大约为3.61eV。BEuT薄膜的发光强度随着退火温度的提高,先是增强后减弱,在700℃时达到最大。这与薄膜的结晶状况有关。
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| 关 键 词： | 铁电薄膜 光学透过率 光致发光 |
| 收稿时间： | 2012/1/5 |
Optical Properties of Bi3.45Eu0.55Ti3O12 Ferroelectric Thin Films |
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| RUAN Kai-bin
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WU Guang-heng
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ZHOU Hong
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WU Yi-bing.Optical Properties of Bi3.45Eu0.55Ti3O12 Ferroelectric Thin Films[J].Opto-Electronic Engineering,2012,39(7):97-101. |
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| Authors: | RUAN Kai-bin WU Guang-heng ZHOU Hong WU Yi-bing |
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| Affiliation: | 1(1.College of Mechanical and Electrical Engineering,Fujian Agriculture and Forestry University,Fuzhou 350002,China;2.State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,Guangzhou 510275,China) |
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| Abstract: | Bi3.45Eu0.55Ti3O12 (BEuT) thin films were prepared on quartz substrates by using chemical solution deposition technique, and the structural and optical properties of thin films were studied in this work. XRD results show that BEuT thin films exhibit a polycrystalline bismuth-layered perovskite structure, and the average grain sizes increase with increasing annealing temperature. In the wavelength of above 500 nm, BEuT thin films show high optical transmittance, and the band gaps of all samples are nearly about 3.61 eV. The emission spectra of Eu3+ ions indicate that the photoluminescence of BEuT thin films is related to the annealing temperature of samples. The emission intensity firstly increases, reaches a maximum for the sample annealed at 700 ℃, and then decreases, which is related to thecrystallization of BEuT thin films. |
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| Keywords: | ferroelectric thin films optical transmittance photoluminescence |
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