Ti掺杂MoS2薄膜的抗氧化性和电学性能

用磁控溅射在硅片上制备MoS₂和Ti-MoS₂薄膜，并将其在恒温恒湿箱中在AT 30℃、RH 70%条件下存储360 h。使用XRD谱、XPS谱和紫外-可见分光光度计、四探针测试仪表征分析薄膜的结构、在恒温恒湿条件下存储前后的表面化学状态和电学性能，研究了Ti掺杂对薄膜抗氧化性和电学性能的影响。结果表明：Ti掺杂影响MoS₂薄膜的晶体取向。随着Ti靶电流的增大薄膜的结晶性变差，Ti靶电流为0.6A时薄膜呈无定型结构且禁带宽度减小、电导率提高；在恒温恒湿条件下存储后薄膜的部分氧化而呈MoS₂与MoO₃的复合状态，随着Ti靶电流的增大I_Mo-O/I_Mo-S比提高、禁带宽度略有增大，Ti靶电流为0.4A的Ti-MoS₂薄膜其化学稳定性较高。

Anti-oxidization and Electronic Properties of Ti Doped MoS2 Films

Thin films of MoS₂ and Ti-MoS₂ were deposited on Si substrate by using magnetron sputtering respectively, and then oxidized in atmosphere with 70%RH at 28℃ for 360 h via a temperature and humidity chamber. Thereafter, the oxidation performance and electrical properties of the above two MoS₂ films were characterized by XRD, XPS, UV-Vis spectrophotometer and four-point probe method. The results show that the Ti doping can affect the crystal orientation of MoS₂ film, and the X-ray diffraction peaks of (110) and (100) of MoS₂ disappear after Ti doping. The films prepared with applied current of 0.6 A for Ti-target are amorphous. Whilst, the band gap of Ti-MoS₂ decrease and the conductivity increase for films, with the increasing applied current for the Ti target. The films are partially oxidized and present the composite state of MoS₂ and MoO₃ after oxidation in the atmosphere with 70%RH at 28℃ for 360 h, and the I_Mo-O/I_Mo-S ratio and band gap increase with the increasing applied current for the Ti target. Especially, the Ti-MoS₂ film, prepared with applied current of 0.4 A for the Ti target, exhibits the better chemical stability.