Surface resistance of large-area Tl2Ba2CaCu2O8 thin films at microwave and millimeter wave frequencies measured by three noncavity techniques

The surface resistanceR _s of Tl₂Ba₂CaCu₂O₈ films fabricated on LaAlO₃ wafers up to 3 inches (7.6 cm) in diameter through a post-deposition anneal process was measured over the frequency range 5.55–94.1 GHz by the following techniques: 5.55 and 27.5 GHz high-temperature superconductor (HTS)-sapphire resonators, 10 GHz parallel plate resonator, and 94.1 GHz scanning confocal resonator.R _s was found to exhibit a quadratic dependence on frequencyf at 77 K:R _s f ^2.0±0.1. The highest-quality films yieldR _s =145±15 at 10 GHz and 77 K. Scanning confocal resonator mapping ofR _s across a 2-inch (5.1 cm) diameter wafer yielded a base value forR _s of 16±1 m at 77 K and 94.1 GHz (equivalent to 180±10 at 10 GHz) and good uniformity inR _s across the wafer. HTS-sapphire resonator measurements ofR _s for fifteen 1.2 cm square parts cut from a 3-inch diameter wafer yieldedR _s values scaled to 10 GHz of 196±10 at 80 K. Similar values were measured for Tl₂Ba₂CaCu₂O₈ films prepared on both sides of a 2-inch diameter wafer.Rs values at 10 GHz and 80 K of 147–214 were maintained over the course of 40 independent and successive deposition runs and corresponding anneals under nominally identical film fabrication conditions. Surface resistance at 5.55 GHz remained below 80 for maximum rf magnetic fields up to 85 Oe at 4.2 K and 7 Oe at 80 K, respectively. Results are compared with predictions of the two-fluid model. The relative advantages and disadvantages of the different techniques for measuring surface resistance are discussed.     

Preparation and properties of Tl2Ba2CaCu2O8 thin films

Anex situ process has been developed to produce thin superconducting Tl₂Ba₂CaCu₂O₈ films. The properties of films grown on different substrates using different annealing regimes were studied. Critical temperatures of 103–107 K were measured on films prepared in a broad range of annealing temperatures on SrTiO₃, LaAlO₃, and Y-ZrO₂ substrates. A critical current density,J _c, of 2×10⁶ A/cm² at 77 K was measured on LaAlO₃. Film morphology was studied by SEM, AFM, and STM.     

低温纯Ar气中Tl2O分压对Tl2Ba2CaCu2O8超导薄膜相组成与性能的影响

研究了高压Ar气氛中750℃低温下Tl2O分压对Tl2Ba2CaCu2O8超导薄膜相组成及其性能的影响。结果表明采用名义比为Tl1.9Ba2Ca2Cu3Oy的混合物作铊源时．生成的Tl2O分压达到最佳值。在该Tl2O分压下,获得了单相c取向的Tl2Ba2CaCu2O8超导薄膜,其Tc值达到108K;高于该分压时,薄膜中出现Tl2Ca3O6、Tl2O3。等杂相,导致膜面粗糙度增大和Tc值下降;低于最佳Tl2O分压．薄膜中生成了Tl2Ba2CaCu2O8和Tl2Ba2Ca2Cu3O10的共生相,导致Tc值下降;而Tl2O分压的进一步降低．则薄膜在铊化中不形成超导相。     

Flux Dynamics in Tl2Ba2CaCu2O8 Thin Films

Investigations on flux dynamics of ring-shaped T1₂Ba₂CaCu₂O₈ superconducting thin films have been carried out by measuring the temperature dependent magnetization M(T) during field-cooling (FC) and zero-field-cooling (ZFC) processes. For a given magnetic field, from the magnetization behavior two distinct temperatures, T_kink and T_irr, can be defined. Below T_kink, a clear hysteretic behavior of M(T) is observed leading to a large irreversible signal ΔM = M_FC ? M_ZFC. Above T_kink, this irreversible signal, though being very small, is still non-zero until it eventually vanishes at a higher temperature T_irr. Above T_irr, both curves M_FC(T) and M_ZFC(T) merge together and become temperature independent. We attribute the first region ( T< T_kink) to a 3D vortex-glass phase, the second region (T_kink < T < T_irr) to a vortex line liquid state and the third region (T_irr < T < T_c) to a pancake liquid state.     

Low-temperature structural studies of Tl2Ba2CaCu2O x

Low-temperature x-ray diffraction studies of superconducting Tl-2212 ceramics revealed anomalies in thec cell parameter andc-axis thermal expansion coefficient near the superconducting transition. Air and vacuum anneals in the range 400–550‡C demonstrate that these anomalies correlate with the superconducting properties of the material. The anomalous temperature variation of thermal expansion suggests that the superconducting transition is accompanied by significant changes in the phonon spectrum.     

Flux Dynamics and Vortex Phase Diagram in Tl2Ba2CaCu2O8 Thin Films

By doing sensitive magnetic measurement, the current-voltage ( I-V or E-j ) characteristics were determined for Tl ₂ Ba ₂ CaCu ₂ O ₈ thin films at temperatures between 4.2 K and 70 K in magnetic fields up to 6T. We found a crossover of the dimensionality of flux dynamics from 3D at low fields to 2D at high fields. The vortex matter melts at a finite temperature at a low field ( 3D ) and at zero K at a high field ( 2D ). Finally we attempt to give a vortex phase diagram based on this analysis.     

Radiation from Intrinsic Josephson Junctions in Misaligned Tl2Ba2CaCu2O8 Thin Films

We measure the current?Cvoltage (I?CV) curves of intrinsic Josephson junctions (IJJs) in misaligned Tl₂Ba₂CaCu₂O₈ thin films embedded in a Fabry?CPérot (F-P) resonator at liquid nitrogen temperature. Regarding the substrate as a dielectric resonator, electromagnetic coupling between the intrinsic Josephson junctions is improved. By adjusting the location of the substrate in the F-P resonator, the critical current of the IJJs under microwave irradiation (75.6?GHz) is suppressed almost to zero. Two pairs of symmetrical radiation (75.6?GHz) peaks are detected. Possible explanations for this experimental result are discussed.     

Characterization of epitaxial Bi2Sr2CaCu2O8+δ thin films

We report a dc sputtering method for the fullin situ preparation of Bi₂Sr₂CaCu₂O_8+δ thin films on SrTiO₃ and LaAlO₃.T _c values of more than 90 K can be achieved by oxidizing annealing below the melting point, followed by a reducing anneal at 500°C. The structural properties of the films are revealed by X-ray diffraction in Bragg-Brentano geometry (strongc-axis orientation with FWHM (0 0 10)=0.3) and also byΦ scans (epitaxy within the substrate plane). Rutherford backscattering and channeling confirmed the correct composition of the cations while the minimum yield,χ _min, is 23%. Depth profiles by SNMS show a very homogeneous distribution of the cations with no detectable loss of bismuth near the surface. The surface morphology of the films was studied by SEM and by STM. Patterning of the films in lateral geometry can be performed by photolithographic techniques without degradation ofT _c .     

Transport properties of textured Bi2Sr2CaCu2O8+y,thin films

Superconducting films of the high-T _c compound Bi₂Sr₂CaCu₂O_8+y , have been grown on (111)-oriented gadolinium gallium garnet substrates by a liquid-phase technique. The films show a very high degree of preferential orientation with thec-axis perpendicular to the substrates. The onset of the resistive transition was 85 K while zero resistance was obtained at 78 K. Results concerning the critical current properties of the films are described. Measurements of the paraconductivity effects on the electrical resistivity above the superconducting transition due to thermodynamic fluctuations are also reported.     

Preparation and characterization of radio-frequency-sputtered Ba2Si2TiO8 thin films

Radio-frequency-sputtered barium titanium silicate (BST, Ba₂Si₂TiO₈) thin films were grown on crystalline Si (100) substrates and were characterized using wavelength-dispersive spectrometry (WDS), X-ray diffraction (XRD), optical microscopy (OM) and scanning electron microscopy (SEM), and diagonal techniques for dielectric properties. The chemical compositions of the films increasingly deviated from stoichiometry with film thickness. At the initial stage of deposition the grain configuration is dependent on the Si substrate texture. XRD analysis indicates that the BST films deposited at an optimum substrate temperature of 845 °C were strongly c-axis oriented, and that the film orientation is manipulated by substrate temperature and supersaturation. The corresponding film-growth rate in the direction normal to the film surface at 845 °C was 1.95 nm min^–1 at the initial stage, and decreased with sputtering time. The as-deposited films have a room-temperature bulk resistivity of 1.8 ×10⁷ m in the direction of thickness and an isotropic surface resistivity of 1.5×10³ m. The high-frequency relative dielectric constant, 0.05 at frequencies higher than 9 MHz, is lower than that of many typical piezoelectric materials. The high-frequency impedance character is typical of piezoelectric materials, giving a minimum impedance frequency of 9.0 MHz and a serial resonant frequency at about 9.5 MHz.     

Pinning potential transport measurements of Bi2Sr2CaCu2O x thin films

Flux creep characteristics ofc-axis-oriented Bi₂Sr₂CaCu₂O _x thin films grown by the method of electron beam evaporation of stoichiometric target and subsequent annealing have been investigated in the absence of external magnetic field. A decrease of the pinning potential with decreasing temperature is obtained fromI–V curves. This result is explained by the presence of the spatially nonlinear pinning potential.     

Microwave surface resistance of epitaxial YBa2Cu3O7 thin films at 18.7 GHz measured by a dielectric resonator technique

We used a dielectric resonator technique for highly sensitive measurements of the temperature dependence of the microwave surface resistanceR _s of 1×1 cm² superconducting films at 18.7 GHz. It consists of a sapphire disc positioned on the film under investigation within a copper cavity which is acting as a radiation shield. In the TE_01δ oscillation mode the highly reproducible quality factor of about 10⁵ results in a sensitivity of ±50μΩ forR _s measurements. The temperature dependence ofR _s can be measured up to values as high as 1 Ω. We have investigated several YBa₂Cu₃O₇ thin films prepared by high oxygen pressure d.c. sputtering on LaAlO₃ and NdGaO₃. Our best films exhibit a pronounced nonlinear behavior of the d.c. resistivityρ(T) withρ(300K)/ρ(100K) values of about 3.7. Those films show, besides the initial fall-off just belowT _c , a further strong decrease ofR _s at low temperatures. This was observed both at 18.7 GHz and 87 GHz, as measured by a conventional cavity end plate replacement technique. ForT?T_c/2 these films exhibit an exp (?αT _c/T) dependence ofR _s withα-values around 0.4. These observations may be explained by a superconducting energy gap with 2Δ/kT _c≈0.8 for charge carriers localized in the CuO chains for YBa₂Cu₃O₇.     

紫外激光脉冲沉积法制备高温超导（Bi,Pb）2Sr2CaCu2O8薄膜的研究

用紫外脉冲激光沉积技术在单晶衬底上制备高温超导(Bi,Pb)2Sr2CaCu2O8薄膜,系统研究了不同镀膜参数对薄膜结晶质量的影响,获得了优化的镀膜工艺。并在较低温沉积、高温退火,以及高温沉积两种工艺下均获得了具有c轴取向、无杂相及无挥发(分解)的(Bi,Pb)2Sr2CaCu2O8薄膜。相比于高温沉积,低温沉积、高温退火制备的薄膜结晶质量更好。     

微波等离子体低温制备氮杂二氧化钒薄膜

选用V2O5为前驱物,通过在玻璃片上镀膜,采用微波等离子体增强法,在低温条件下,成功制备了氮杂二氧化钒薄膜.通过X射线衍射(XRD),FT-IR对样品进行表征,结果表明:合成的样品为多晶氮杂二氧化钒.相变温度测试结果表明:退火工艺可以降低相变温度,同时提高薄膜的结晶度;改变氮气流量,相变温度先降低后升高,当氮气流量为20ml/min时,相变温度可以降低至40℃.     

Dielectric properties of (Ba,Sr)O-(Sm,La)2O3-TiO2 ceramics at microwave frequencies

The dielectric properties of (Ba, Sr)O-(Sm, La)₂O₃-TiO₂ material at microwave frequencies were investigated. By varying the amount of strontium from 0–25 mol% in the 0.15(Ba_1–x Sr _x )O-0.15Sm₂O₃-0.7TiO₂ composition, it was possible to adjust the frequency temperature coefficient, _f, from –13 p.p.m. °C^–1 to + 30 p.p.m. °C^–1. When 7 mol% Sr was substituted for barium, _f=0 p.p.m. °C^–1 was obtained. TiO₂ with rutile phase (_f400 p.p.m. °C^–1) acted as a dominant element in _f variation of the 0.15(Ba_1–x Sr _x )O-0.15(Sm_1–y La _y )₂O₃-0.7TiO₂ (0x0.25, 0y0.6) system. Additionally, increasing the quantity of lanthanum substitution for samarium had a greater positive effect on _f than strontium substitution for barium. When 60 mol% La was substituted for samarium with 7mol% Sr substitution barium, _f of the system reached 95 p.p.m. °C^–1. The effect on microwave dielectric characteristics of the 0.15(Ba_0.93Sr_0.07)O-0.15Sm₂O₃-0.7TiO₂ (BSST) ceramics by varying the calcination and/or sintering conditions or doping additives, were studied. The added SnO₂ acted as a firing agent to lower the sintering temperature, and the dielectricQ(Q _d) value was improved by properly adding CdO. With 1 wt% CdO addition, the highestQ _d value of the BSST resonator, after calcination at 1100 °C/2 h and sintering at 1370 °C/4 h, reached 4180 at 4 GHz with a small _f of –4 p.p.m. °C^–1 and an _r of 80.7 was obtained.     

Preparation of high dielectric constant thin films of CaCu3Ti4O12 by sol-gel

Preparation of sol-gel derived CaCu₃Ti₄O₁₂ (CCTO) thin films using two different sols and their characterization including their dielectric response are reported. The properties of CCTO films depend heavily on solvents used to prepare the sols. Dielectric constant as high as ∼900 at 100 kHz could be obtained when acetic acid was used to prepare the sol; in contrast, use of hexanoic acid in the sol yielded films with a much lower dielectric constant. The variation in grain and grain boundary conductivities with temperature has been measured. Activation energies of 0.08 eV and 0.68 eV have been found for grain and grain boundary conduction, respectively.     

负热膨胀ZrW2O8薄膜的制备和性能

用交替射频磁控溅射法在石英基片上沉积并退火制备了ZrW2O8薄膜,测量了薄膜与基片之间的结合力和薄膜厚度,研究了薄膜的负热膨胀特性.结果表明:用磁控溅射方法制备的薄膜为非晶态,表面平滑、呈颗粒状,在1200℃热处理3 min后得到立方相ZrW2O8薄膜,结晶薄膜的颗粒长大,薄膜与基片之间有良好的结合力.立方相ZrW2O8薄膜在15-200℃热膨胀系数为-24.81×10-6K-1,200-700℃热膨胀系数为-4.78×10-6K-1,平均热膨胀系数为-10.08×10-6K-1.