Evolving antiferroelectric stability and phase transition behavior in NaNbO3-BaZrO3-CaZrO3 lead-free ceramics

The stability of antiferroelectricity in NaNbO₃ ceramics was found to evolve with co-doping x mol% CaZrO₃ and 6 mol% BaZrO₃, from a dominant ferroelectric (FE) orthorhombic Q phase (x = 0) to a gradually stabilized antiferroelectric (AFE) orthorhombic P phase owing to different ionic radii of Ba and Ca ions. Although a complete AFE P phase appears at x = 0.5, the field induced AFE-FE phase transformation is irreversible at first, and then becomes partially reversible at x = 1 and finally completely reversible at x = 3. The above-mentioned change process proves to be associated with the enhancing stability of antiferroelectricity with x, as evidenced by means of dielectric, polarization and strain properties as well as in/ex-situ synchrotron x-ray diffraction and Raman spectra. A composition-field phase diagram for the NN-based lead-free AFE ceramic was constructed on basis of the phase structural change, which would provide a clear understanding of how ion doping influences its antiferroelectricity.     

Highly-reliable dielectric capacitors with excellent comprehensive energy-storage properties using Bi0.5Na0.5TiO3-based relaxor ferroelectric ceramics

The development of capacitors with high reliability and good comprehensive performances is of great significance for practical applications. In this work, lead-free relaxor ferroelectric (FE) ceramics of (1-x)(0.5(Bi_0.5Na_0.5)TiO₃-0.5SrTiO₃)-xBi(Mg_2/3Nb_1/3)O₃ ((1-x)(BNT-ST)-xBMN) were prepared by a conventional solid-state reaction method. The introduction of BMN was found to enhance local structure disorder, leading to the significantly reduced size of FE nanodomains, which is responsible for the slim polarization-electric field hysteresis loops. A giant energy-storage density of 6.62 J/cm³ and a high efficiency of 82 % can be achieved simultaneously under a moderate electric field of 34 kV/mm at x = 0.08. It also exhibits high discharge density ～ 2.74 J/cm³, large power density ～ 248 MW/cm³ and ultrafast discharge rate ～ 28 ns at 20 kV/mm in addition to excellent temperature (10–130 °C) and frequency (1–100 Hz) stabilities. These results demonstrate that the (1-x)(BNT-ST)-xBMN ceramic system is a promising lead-free candidate for advanced pulsed power capacitor applications.     

Potentiality of Bi and Mn co-doped lead-free NaNbO3 ceramics as a pyroelectric material for uncooled infrared thermal detectors

The pyroelectric materials have immense applications in the uncooled infrared thermal detectors. However, owing to increasing environmental concerns due to Pb element, it is required to explore novel, high-performance, environmental-friendly pyroelectric materials. This is the first study to report about the pyroelectric properties of lead-free NaNbO₃ ceramics, which displayed a high pyroelectric coefficient of 1.85 × 10^?8 C cm^-2 K^?1 and figures of merit as F_i = 0.67 × 10^?10 m V^?1, F_v = 3.33 × 10^?2 m² C^?1, and F_d = 5.32 × 10^-5 Pa^?1/2 at room temperature. Also, highly temperature-stable pyroelectric characteristics were also observed in NaNbO₃ ceramics due to the high depolarization temperature of 280 ℃. The high pyroelectric properties and temperature stability were a result of the electric field induced irreversible phase transition from antiferroelectric to ferroelectric. Hence, we can conclude that lead-free NaNbO₃ ceramics are a novel and promising candidate for pyroelectric detectors in a wide temperature range, especially for large area detectors and pyroelectric point detector.     

Enhanced energy storage properties of Ba0.4Sr0.6TiO3 lead-free ceramics with Bi2O3-B2O3-SiO2 glass addition

In this study, we present an effective strategy to enhance the energy storage properties of Ba_0.4Sr_0.6TiO₃ (BST) lead-free ceramics by the addition of Bi₂O₃-B₂O₃-SiO₂ (BBS) glass, which were prepared by the conventional solid state sintering method. The phase structure, microstructure and energy storage properties were investigated in detail. It can be found that the Ba_0.4Sr_0.6TiO₃-x wt%(Bi₂O₃-B₂O₃-SiO₂) (BST- x wt%BBS, 0 ≤ x ≤ 12) ceramics possess large maximum polarization (P_max), low remanent polarization (P_r) and slim polarization electric field (P-E) hysteresis loops. The breakdown strength (BDS), recoverable energy storage density (W_rec) and energy storage efficiency (η) are enhanced obviously with the addition of BBS glass. The BST-9 wt%BBS ceramic is found to exhibit excellent energy storage properties with a W_rec of 1.98 J/cm³ and a η of 90.57% at 279 kV/cm. These results indicate that the BST-x wt%BBS ceramics might be good candidates for high energy storage applications.     

Enhanced energy storage performance in Sn doped Sr0.6(Na0.5Bi0.5)0.4TiO3 lead-free relaxor ferroelectric ceramics

SnO₂ doped Sr_0.6(Na_0.5Bi_0.5)_0.4TiO₃ (NBT-ST) ceramics were prepared by a conventional solid-state reaction method. Their phase structures, microstructures and electrical properties were characterized in details. It is found that SnO₂ doping could increase the lattice parameters, density and average grain size. A suitable amount of SnO₂ can improve dielectric properties, and affect the relaxor behavior of the NBT-ST matrix, thereby it can effectively reduce the energy loss and optimize the energy storage performance. Furthermore, the energy storage properties are improved with SnO₂ doping. Especially, the 1 at. % SnO₂ doped NBT-ST achieves a high recoverable energy density of 2.35 J/cm³, which is mainly attributed to large maximum polarization of 43.2 μC/cm², small remnant polarization of 5.83 μC/cm² and high breakdown strength of 180 kV/cm. Also, relatively good temperature stability for dielectric performance and excellent fatigue resistance are observed in this composition. These properties are attractive for lead-free energy storage applications.     

Superior energy-storage properties in (Pb,La)(Zr,Sn,Ti)O3 antiferroelectric ceramics with appropriate La content

Antiferroelectric (AFE) ceramics based on Pb(Zr,Sn,Ti)O₃ (PZST) have shown great potential for applications in pulsed power capacitors because of their fast charge-discharge rates (on the order of nanoseconds). However, to date, it has been proven very difficult to simultaneously obtain large recoverable energy densities W_re and high energy efficiencies η in one type of ceramic, which limits the range of applications of these materials. Addressing this problem requires the development of ceramic materials that simultaneously offer a large ferroelectric-antiferroelectric (FE-AFE) phase-switching electric field E_A, high electric breakdown strength E_b, and narrow polarization-electric field (P-E) hysteresis loops. In this work, via doping of La³⁺ into (Pb_1-1.5xLa_x)(Zr_0.5Sn_0.43Ti_0.07)O₃ AFE ceramics, large E_A and E_b due to respectively enhanced AFE phase stability and reduced electric conductivity, and slimmer hysteresis loops resulting from the appearance of the relaxor AFE state, are successfully obtained, and thus leading to great improvement of the W_re and η. The most superior energy storage properties are obtained in the 3?mol% La³⁺-doped (Pb_1-1.5xLa_x)(Zr_0.5Sn_0.43Ti_0.07)O₃ AFE ceramic, which simultaneously exhibits at room temperature a large W_re of 4.2?J/cm³ and a high η of 78%, being respectively 2.9 and 1.56 times those of (Pb_1-1.5xLa_x)(Zr_0.5Sn_0.43Ti_0.07)O₃ AFE ceramics with x?=?0 (W_re?=?1.45?J/cm³, η?=?50%) and also being superior to many previously published results. Besides, both W_re and η change very little in the temperature range of 25–125?°C. The large W_re, high η, and their good temperature stability make the Pb_0.955La_0.03(Zr_0.5Sn_0.43Ti_0.07)O₃ AFE ceramic attractive for preparing high pulsed power capacitors useable in various conditions.     

Large energy density with excellent stability in fine-grained (Bi0.5Na0.5)TiO3-based lead-free ceramics

In this work, fine-grained (0.95-x)(Bi_0.5Na_0.5)TiO₃-0.05BaTiO₃-xBi(Zn_2/3Nb_1/3)O₃ (abbreviated as BNT-BT-xBZN, x = 0～0.20) lead-free ceramics are successfully prepared, showing a high energy storage performance. The addition of BZN results in decreased grain size, enhanced breakdown strength and stronger relaxor behavior with polar nanoregions. Slimmer P-E loops are thereby achieved, leading to the improvement of energy density and efficiency. As a result, a high W_D of ～2.83 J/cm³ is achieved under a relatively low electric field of 18 kV/mm in the x = 0.125 ceramic with submicron-sized grains (～0.4 μm). The W_D value is larger than that of x = 0 ceramic by ～800%. Furthermore, the x = 0.125 ceramic possesses excellent frequency stability and strong fatigue endurance. The BNT-BT-xBZN lead-free ceramics show promising potential for application in high energy density ceramic capacitors.     

Phase transition,microstructure, and dielectric properties of Li/Ta/Sb co-doped (K,Na)NbO3 lead-free ceramics

Li/Ta/Sb co-doped lead-free (K_0.4425Na_0.52Li_0.0375)(Nb_0.93−xTa_xSb_0.07)O₃ (abbreviated KNLNST_x) piezoelectric ceramics, with Ta-doping ratio of x ranging from 0.0275 to 0.0675, were synthesized using the conventional solid-state reaction method at the sintering temperature of 1130 °C. The effects of Ta content on the microstructure, dielectric properties, and phase transition behavior of the prepared ceramics were systematically investigated. The X-ray diffraction results show that all KNLNST_x ceramics formed a secondary phase, which is assigned to the tetragonal tungsten-bronze type (TTB) structure phase, and showed a phase transition from an orthorhombic symmetry to a tetragonal symmetry across a composition region of 0.0375<x<0.0475. The grain shape and size that correspond to the phase structure transformations can be clearly observed in the scanning electron microscopy images. As x increased to 0.0475, the KNLNST_0.0475 ceramics changed from orthorhombic to tetragonal structure and showed excellent piezoelectric properties of d₃₃=313 pC/N, k_p=47%, and ε_r=1825. By contrast, samples of x=0.0375 with orthorhombic symmetry exhibited poor piezoelectric properties, with d₃₃=200 pC/N and ε_r=1015. These results indicate that phase structure is vital in the piezoelectric properties of KNN lead-free ceramics.     

Large electrostrain and high energy-storage of (1-x)[0.94(Bi0.5Na0.5) TiO3-0.06BaTiO3]-xBa(Sn0.70Nb0.24)O3 lead-free ceramics

(1-x)[0.94(Bi_0.5Na_0.5)TiO₃-0.06BaTiO₃]-xBa(Sn_0.70Nb_0.24)O₃ (abbreviated as BNTBT-100xBSN) lead-free ceramics were fabricated with a relative density greater than 96 %, and the structure as well as performance were tested. BNTBT-100xBSN ceramics are pseudo-cubic perovskite structure, with dense surface morphology. Doping BSN can effectively reduce the dielectric loss of ceramics and increase the relaxation properties to a certain extent. The randomly distributed ferroelectric phase was replaced by polar nano regions, thereby improving the electro-strain and energy storage performance of the system. The largest electro-strain and the corresponding normalized strain (d₃₃*) reach ~ 0.43 % and 633 pm/V respectively in the BNTBT-1BSN ceramic. The largest effective energy storage density reaching ~ 1.28 J/cm³ was tested in BNTBT-2BSN. BNTBT-100xBSN ceramics provide a feasible idea for the systematic research of lead-free ferroelectrics and improvements in electro-strain and energy storage applications.     

Enhanced thermal stability of piezoelectricity in lead-free (Ba,Ca)(Ti,Zr)O3 systems through tailoring phase transition behavior

Good thermal stability in lead-free BaTiO₃ ceramics is important for their applications above room temperature. In this study, thermal stable piezoelectricity in lead-free (Ba,Ca)(Ti,Zr)O₃ ceramics was enhanced by tailoring their phase transition behaviors. Comparison between (1-x)Ba(Ti_0.8Zr_0.2)O₃-x(Ba_0.65Ca_0.35)TiO₃ and (1-y)Ba(Ti_0.8Zr_0.2)O₃-y(Ba_0.95Ca_0.05)TiO₃ revealed that latter system at y?=?0.80 had much better thermal stable piezoelectric coefficient than the former at x?=?0.45. Both systems crystalized in tetragonal to orthorhombic phase boundary at room temperature. The phase transition temperature and degree of diffusion were adjusted by Ca and Zr ions contents and demonstrated great influence on temperature dependent dielectric permittivity, hysteresis loops, and in-situ domain structures. The improved thermal stability of (1-y)Ba(Ti_0.8Zr_0.2)O₃-y(Ba_0.95Ca_0.05)TiO₃ prepared at y?=?0.80 was linked to its higher paraelectric to ferroelectric phase transition temperature (T_m?=?115.7?°C) and less degree of diffusion (degree of diffusion constant γ?=?1.35). By comparison, (1-x)Ba(Ti_0.8Zr_0.2)O₃-x(Ba_0.65Ca_0.35)TiO₃ prepared at x?=?0.45 revealed T_m?=?81.3?°C and γ?=?1.65. Overall, these findings look promising for future stimulation of phase transition behaviors and design of piezoelectric materials with good thermal stabilities.     

Enhanced energy storage and fast discharge properties of BaTiO3 based ceramics modified by Bi(Mg1/2Zr1/2)O3

Lead-free (1-x)BaTiO₃-xBi(Mg_1/2Zr_1/2)O₃ ((1-x)BT-xBMZ) ceramics with perovskite structure were synthesized by solid-state reaction methods. (1-x)BT-xBMZ solid solution transforms from tetragonal (x≤0.04) to pseudocubic (x≥0.08) and exhibits a dispersive dielectric behavior with respect to frequency, showing typical relaxor characteristics with BMZ increasing. The optimal energy storage density of 1.25 J cm^?3 and energy efficiency of >95% are obtained at x = 0.15, with maximum dielectric breakdown strength of 185 kV cm^-1 at 200 μm thickness., The energy storage density and energy efficiency of 0.85BT-0.15BMZ ceramics maintain at about 0.8 J cm^?3 and 89% at 150 kV cm^-1 over temperature range of 25 °C～150 °C, exhibiting good thermal stability. The pulse discharge capability of 0.85BT-0.15BMZ ceramics were measured under different electric fields, showing a short charge-discharge time of 1.3 μs. Therefore (1-x)BT-xBMZ solid solution with high energy density and efficiency, good temperature stability and fast discharge speed, is promising candidate for high power applications.     

Enhanced pyroelectric response from domain-engineered lead-free (K0.5Bi0.5TiO3-BaTiO3)-Na0.5Bi0.5TiO3 ferroelectric ceramics

Enhanced pyroelectric response is achieved via domain engineering from [001] grain-oriented, tetragonal-phase, lead-free 0.2(2/3K_0.5Bi_0.5TiO₃-1/3BaTiO₃)-0.8Na_0.5Bi_0.5TiO₃ (KBT-BT-NBT) ceramics prepared by a templated grain growth method. The [001] crystallographic orientation leads to large polarization in tetragonal symmetry; therefore, texturing along this direction is employed to enhance the pyroelectricity. X-ray diffraction analysis revealed a Lotgering factor (degree of texturing) of 93 % along the [001] crystallographic direction. The textured KBT-BT-NBT lead-free ceramics showed comparable pyroelectric figures of merit to those of lead-based ferroelectric materials at room temperature (RT). In addition to the enhanced pyroelectric response at RT, an enormous enhancement in the pyroelectric response (from 1750 to 90,900 μC m^?2 K^?1) was achieved at the depolarization temperature because of the sharp ferroelectric to antiferroelectric phase transition owing to coherent 180° domain switching. These results will motivate the development of a wide range of lead-free pyroelectric devices, such as thermal sensors and infra-red detectors.     

Temperature-dependent piezoelectric strain and resonance performance of Fe2O3-modified BiScO3-PbTiO3-Pb(Nb1/3Mn2/3)O3 ceramics

The piezoelectric strain and resonance performance of 0.37BiScO₃-0.6PbTiO₃-0.03Pb(Mn_1/3Nb_2/3)O₃ (BS-PT-PMN-xFe) ceramics with different amounts of Fe content addition were investigated from room temperature to 200 °C. Both the piezoelectric strain and resonance performance are improved by Fe addition in wide temperature range. Piezoelectric strain of BS-PT-PMN-xFe with 1 mol% Fe is 0.23%, which is comparable to that of BiScO₃-PbTiO₃ (BS-PT) ceramics, while the strain hysteresis is only one-third. At 200 °C, the high-field strain coefficient of BS-PT-PMN-Fe with 1 mol% Fe is as large as 700 pm/V. Variation of piezoelectric strain and hysteresis is clearly reducing by Fe addition. The maximum vibration velocity is enhanced up to approximately 1 m/s in 2 mol% Fe-modified BS-PT-PMnN-xFe ceramics, and the vibration velocity is stable from room temperature to 200 °C when the electric voltage magnitude was below 60 V_pp. These results indicate that BS-PT-PMN-xFe ceramics are potential candidates for high-temperature piezoelectric actuator application.     

Electrical properties and relaxor phase evolution of Nb-Modified Bi0.5Na0.5TiO3-Bi0.5K0.5TiO3-SrTiO3 lead-free ceramics

In this work, the crystalline phase, domain structure, and electrical properties of [Bi_0.5(Na_0.84K_0.16)_0.5]_0.96Sr_0.04Ti_1-xNb_xO₃ (x = 0.010–0.030) ceramics are investigated. Increasing the Nb content induces the phase transition from coexistent rhombohedral and tetragonal phases to a single pseudo-cubic phase, and the lamellar ferroelectric domains evolve into polar nanoregions. Decreased ferroelectric-to-relaxor transition temperature and enhanced frequency dispersion are found in the temperature-dependent dielectric constant and loss, implying a transition from the non-ergodic to ergodic relaxor state. The Nb substitution significantly degrades the long-range ferroelectric order with sharply decreased piezoelectric coefficients from ? 140 to ? 1 pC/N. However, a large strain of 0.32% at 5 kV/mm (normalized strain of 640 pm/V) is obtained around the critical composition of x = 0.0225. The composition of x = 0.030 shows good temperature insensitivity of the strain response, characterized by 308 pm/V with less than 15% reduction from 25 °C to 125 °C.     

Influence of B-site compositional homogeneity on properties of (K0.44Na0.52Li0.04)(Nb0.86Ta0.10Sb0.04)O3-based piezoelectric ceramics

The effect of B-site compositional homogeneity on microstructure, piezoelectric properties and dielectric behaviour of lead-free piezoelectric ceramics, (K_0.44Na_0.52Li_0.04) (Nb_0.86Ta_0.10Sb_0.04)O₃, is investigated. The B-site compositional homogeneity is evaluated by using an intermediate precursor obtained by solid state reaction between adequate amounts of Nb₂O₅, Ta₂O₅ and Sb₂O₅, calcined at 1350 °C and attrition milled. The B-site precursor powder is mixed with alkaline carbonates to synthesize perovskite powders and, finally, sinter piezoceramics. X-ray diffraction and Raman spectroscopy reveal the formation of a perovskite phase, although tetragonal tungsten-bronze structure is detected as minor secondary phase. Ceramics processed by using B-site precursor show different crystalline structure as a function of sintering conditions or K/Na ratio. The B-site precursor route produces thus lower piezoelectric properties, but the control of alkali volatilization by using sintering powder bed resulted in a relevant decrease of dielectric losses that favours the d₃₃ enhancement.     

Enhanced microstructure and electrical properties of Mn-modified Bi0.5(Na0.65K0.35)0.5TiO3 ferroelectric ceramics

Bi_0.5(Na_0.65K_0.35)_0.5TiO₃ (BNKT) and Mn-modified Bi_0.5(Na_0.65K_0.35)_0.5(Mn_xTi_1−x)O₃ (BNKMT-10³x), (x=0.0–0.5%) ferroelectric ceramics were synthesized by solid-state reaction method. Optimization of calcination temperature in Mn-doped ceramics was carried out for the removal of secondary phases observed in XRD analysis. BNKMT ceramics sintered at 1090 °C showed enhanced dielectric, piezoelectric and ferroelectric properties in comparison to pure BNKT. The average grain size was found to increase from 0.35 μm in BNKT to 0.52 μm in Bi_0.5(Na_0.65K_0.35)_0.5(Mn_0.0025Ti_0.9975)O₃ (BNKMT-2.5) ceramics. The dielectric permittivity maximum temperature (T_m) was increased to a maximum of 345 °C with Mn-modification. AC conductivity analysis was performed as a function of temperature and frequency to investigate the conduction behavior and determine activation energies. Significant high value of piezoelectric charge coefficient (d₃₃=176 pC/N) was achieved in BNKMT 2.5 ceramics. Improved temperature stability of ferroelectric behavior was observed in the temperature dependent P–E hysteresis loops as a result of Mn-incorporation. The fatigue free nature along with enhanced dielectric and ferroelectric properties make BNKMT-2.5 ceramic a promising candidate for replacing lead based ceramics in device applications.     

High-temperature dielectrics based on (1-y)[(1-x)Bi0.5Na0.5TiO3-xBiAlO3]-yCaZrO3 ternary system with stable permittivity and low dielectric loss in a wide temperature range

High temperature dielectrics based on (1-y)[(1-x)Bi_0.5Na_0.5TiO₃-xBiAlO₃]-yCaZrO₃ (BNT-100xBA-100yCZ) ternary system were designed and prepared. The introduction of BiAlO₃ is verified to create defect dipoles ${(\text{A}{\text{l}}_{\text{T}\text{i}}^{\text{'}}-{\text{V}}_{\text{O}}^{??})}^{?}$, which leads to the increase of the resistivity and decrease of dielectric loss in BNT-100xBA-100yCZ at high temperature. And the introduction of CaZrO₃ is helpful to increase the temperature stability of permittivity, which is probably due to an inhomogeneous domain structure. The composition of x=0.09 and y=0.05 has a good overall dielectric properties, with permittivity value of 765 at 25 °C and 1263 at 200 °C, small variance of permittivity (Δε'/ε'_{200 °C} ≤ ±15%) between 133 °C and 500 °C and low dielectric loss (tan ≤ 0.02) in the temperature range of 160 °C ?425 °C. Therefore, this system will be one of promising candidates of dielectrics used for high-temperature capacitors.     

Composition and poling condition-induced electrical behavior of (Ba0.85Ca0.15)(Ti1−xZrx)O3 lead-free piezoelectric ceramics

Lead-free (Ba_0.85Ca_0.15)(Ti_1−xZr_x)O₃ (BCTZ) piezoelectric ceramics were fabricated by normal sintering in air atmosphere. BCTZ ceramics with x = 0.10 possess a coexistence of tetragonal and rhombohedral phases at ∼40 °C. The Curie temperature of BCTZ ceramics decreases with increasing the Zr content. Piezoelectric properties of BCTZ ceramics are dependent on the poling conditions (i.e., the poling temperature and the poling electric field), and the underlying physical mechanism is illuminated by the phase angle. The BCTZ (x = 0.10) ceramic, which locates at the existence of two phases and is poled at E ∼ 4.0 kV/mm and T_p ∼ 40 °C, exhibits an optimum electrical behavior at a room temperature of ∼20 °C: d₃₃ ∼ 423 pC/N, k_p ∼ 51.2%, 2P_r ∼ 18.86 μC/cm², 2E_c ∼ 0.47 kV/mm, ?_r ∼ 2892, and tan δ ∼ 1.53%.     

Enhanced resistance in Bi(Fe1-xScx)O3-0.3BaTiO3 lead-free piezoelectric ceramics: Facile analysis and reduction of oxygen vacancy

We reported a facile analysis and reduction of oxygen vacancy (${\mathrm{V}}_{\mathrm{O}}^{??}$) in 0.7Bi(Fe_1-xSc_x)O₃-0.3BaTiO₃ (0≤x≤0.08) ceramics. The leakage current mechanism was investigated intensively. Our results indicated that oxygen vacancies are the main cause for the high conductivity in BF-BT ceramics, and their concentration was quantitatively estimated from the Bi³⁺ content and the average oxidation state of iron. The ${\mathrm{V}}_{\mathrm{O}}^{??}$ concentration was effectively suppressed and the insulation resistance was enhanced by almost two orders of magnitude after doping 2%mol Sc³⁺. The enhanced insulation resistance contributed to excellent piezoelectric properties with d₃₃ = 165 pC/N, T_C = 505 °C, and k_p = 26%. The proposed analysis method used to quantify the ${\mathrm{V}}_{\mathrm{O}}^{??}$ concentration provides valuable indications to reduce the leakage current density and improve the piezoelectric properties of BF-BT based ceramic.     

Dielectric,impedance and piezoelectric properties of (K0.5Nd0.5)TiO3-doped 0.67BiFeO3-0.33BaTiO3 ceramics

A novel (0.67-x)BiFeO₃-0.33BaTiO₃-x(K_0.5Nd_0.5)TiO₃ (KNT100x, x = 0.0, 0.02, 0.04, 0.06, 0.08 mol%) ceramics were fabricated and their microstructure and electrical properties were studied. All samples displayed a pseudo-cubic symmetry, and adding of KNT had little effect on grain size. The dielectric analysis displayed the dispersion increases with the addition of KNT compositions, showing strong relaxor properties. Besides, high dielectric constant (ε’) of 23000 and dielectric peak temperature (T_m) of 390 °C remain at 1 kHz in the x = 0.02 sample while the dielectric loss (tanδ) dropped below 0.5 in the range of 30–400 °C, showing excellent electrical insulation performance. In addition, doping of KNT had obvious influence on the strain, and a large strain (Smax) of 0.26% was obtained at x = 0.02 due to the increase of electrical insulation. More importantly, the strain at 50 kV cm^?1 enhanced significantly with temperature increasing, reaching a maximum strain of 0.75% with a small hysteresis coefficient of 30% at 110 °C. Particularly, KNT02 exhibited excellent fatigue resistance within 10⁵ fatigue cycles. Presumably these results are attributed to the coexistence of ferroelectric and non-ergodic relaxor domains and the thermally activated domain wall motion.