Surface resistance of large-area Tl2Ba2CaCu2O8 thin films at microwave and millimeter wave frequencies measured by three noncavity techniques

The surface resistanceR _s of Tl₂Ba₂CaCu₂O₈ films fabricated on LaAlO₃ wafers up to 3 inches (7.6 cm) in diameter through a post-deposition anneal process was measured over the frequency range 5.55–94.1 GHz by the following techniques: 5.55 and 27.5 GHz high-temperature superconductor (HTS)-sapphire resonators, 10 GHz parallel plate resonator, and 94.1 GHz scanning confocal resonator.R _s was found to exhibit a quadratic dependence on frequencyf at 77 K:R _s f ^2.0±0.1. The highest-quality films yieldR _s =145±15 at 10 GHz and 77 K. Scanning confocal resonator mapping ofR _s across a 2-inch (5.1 cm) diameter wafer yielded a base value forR _s of 16±1 m at 77 K and 94.1 GHz (equivalent to 180±10 at 10 GHz) and good uniformity inR _s across the wafer. HTS-sapphire resonator measurements ofR _s for fifteen 1.2 cm square parts cut from a 3-inch diameter wafer yieldedR _s values scaled to 10 GHz of 196±10 at 80 K. Similar values were measured for Tl₂Ba₂CaCu₂O₈ films prepared on both sides of a 2-inch diameter wafer.Rs values at 10 GHz and 80 K of 147–214 were maintained over the course of 40 independent and successive deposition runs and corresponding anneals under nominally identical film fabrication conditions. Surface resistance at 5.55 GHz remained below 80 for maximum rf magnetic fields up to 85 Oe at 4.2 K and 7 Oe at 80 K, respectively. Results are compared with predictions of the two-fluid model. The relative advantages and disadvantages of the different techniques for measuring surface resistance are discussed.     

Preparation and properties of Tl2Ba2CaCu2O8 thin films

Anex situ process has been developed to produce thin superconducting Tl₂Ba₂CaCu₂O₈ films. The properties of films grown on different substrates using different annealing regimes were studied. Critical temperatures of 103–107 K were measured on films prepared in a broad range of annealing temperatures on SrTiO₃, LaAlO₃, and Y-ZrO₂ substrates. A critical current density,J _c, of 2×10⁶ A/cm² at 77 K was measured on LaAlO₃. Film morphology was studied by SEM, AFM, and STM.     

Transport properties of textured Bi2Sr2CaCu2O8+y, thin films

Superconducting films of the high-T _c compound Bi₂Sr₂CaCu₂O_8+y , have been grown on (111)-oriented gadolinium gallium garnet substrates by a liquid-phase technique. The films show a very high degree of preferential orientation with thec-axis perpendicular to the substrates. The onset of the resistive transition was 85 K while zero resistance was obtained at 78 K. Results concerning the critical current properties of the films are described. Measurements of the paraconductivity effects on the electrical resistivity above the superconducting transition due to thermodynamic fluctuations are also reported.Supported by Ansaldo S.p.A Divisione Ansaldo Ricerche, Via Corso Perrone 25, I-16100 Genova, Italy.     

HREM surface profile images of Bi2Sr2CaCu2O8

Surface profile images of Bi₂Sr₂CaCu₂O₈ have been obtained using high-resolution electron microscopy. The cleaved (001) surface of the crystals terminates with a single Bi-O atomic layer. The modulated structure developed in this surface atomic layer was observed directly. The (hk0) surfaces were found to decompose in air into an amorphous coating layer. This coating layer was unlikely recrystallized into the original structure under electron beam irradiation. The amorphous layer on the (hk0) surface formed in pure Ar atmosphere was relatively thin and could be recrystallized into some secondary phases in which a Bi loss was observed. The original (001) surface might also be covered by an amorphous-like layer. This disordered layer could be recrystallized under electron beam irradiation into BiSr₂Ca₂Cu₃O₉, BiSr₂CuO₅, etc. which intergrow with the parent crystal perfectly on the (001) planes.The author thanks the EPSRC for financial support.     

Resistive upper critical field of single crystals of Tl2Ba2CuO6

We have measured the resistive upper critical field of overdoped single crystals of Tl₂Ba₂CuO₆ from the zero-field transition temperatureT _c (approximately 20 K) to temperatures as low as 12 mK, corresponding to less than 0.001T _c. In sharp contrast to the predictions of standard theories of superconductivity, the critical field is found to rise steeply with positive curvature as the temperature is reduced, and no sign of saturation is observed down to the lowest temperatures reached.     

Reproducibility of transition temperature and critical current density of thin films of YBa2Cu3O7 on (100) LaAlO3

Submicrometer epitaxial films of YBa₂Cu₃O₇(YBCO) on (100) LaAlO₃ were made by coevaporation and furnace annealing. Samples from more than a dozen runs are used in this study. The zero resistance transition temperature (T _c) is high (89 or 90 K) if the film composition is phase pure (Ba/Y=2, Cu/Y=3) or if it is enriched in Ba and Cu. For these compositions the critical current density (J _c) at 77 K has an average value of 2×10⁵ A cm^–2, with a tendency for decreasingJ _c with increasing film thickness (0.2 to 0.8m). Variations inJ _c are not correlated with deviations from ideal stoichiometry. Steeper slopes of the resistance-temperature curves above 100 K and lower values of the room-temperature resistivity are associated with high values ofJ _c. If the film composition is enriched in Y relative to Ba and Cu,T _c decreases by several degrees.     

Electrical conductivity of 5 mol.% Yb2O3 and 5 mol.% Gd2O3 co-doped Sm2Zr2O7

Sm₂Zr₂O₇ co-doped with and without 5 mol.% Yb₂O₃ and 5 mol.% Gd₂O₃ were prepared by a pressureless-sintering method at 1973 K for 10 h in air. The relative density, structure and electrical conductivity were investigated by the Archimedes method, X-ray diffraction, scanning electron microscopy and impedance spectra measurements. Both Sm₂Zr₂O₇ and (Sm_0.9Gd_0.05Yb_0.05)₂Zr₂O₇ ceramics exhibit a single phase of pyrochlore-type structure. The grain conductivity, grain-boundary conductivity and total conductivity obey the Arrhenius relation, respectively, and gradually increase with increasing temperature from 723 to 1173 K. (Sm_0.9Gd_0.05Yb_0.05)₂Zr₂O₇ ceramic is the oxide-ion conductor in an oxygen partial pressure range of 1.0 × 10⁻⁴ to 1.0 atm at all test temperature levels. The grain conductivity, grain-boundary conductivity and total conductivity of (Sm_0.9Gd_0.05Yb_0.05)₂Zr₂O₇ with dual Yb³⁺ + Gd³⁺ doping are higher than those of undoped Sm₂Zr₂O₇ at identical temperature levels.     

Preparation and second harmonic generation of Ba2TiSi2O8 films

The synthesis and characterization of the Ba₂TiSi₂O₈ films are described. The Ba₂TiSi₂O₈ crystal was obtained after heat treatment at above 630 °C of a sol-gel derived glassy material which has a chemical composition (mole ratio) 2BaO, TiO₂, 2SiO₂, and then the Ba₂TiSi₂O₈ films were formed from the hydration of CaO-P₂O₅ glass powders. Heat treatment conditions and crystallization of the synthesized materials were studied by DSC-TG, XRD, and FT-IR. Second order nonlinear optical property has been verified by second harmonic generation test at 1064 nm. These results showed that the hydration process has a potential in rendering shape-comfortable optical materials.     

The As-prepared surfaces of C-axis-oriented Nd1Ba2Cu3Oy thin films characterized using scanning probe microscopes

Recently, superconducting Nd₁Ba₂Cu₃O_y (Ndl23) thin films with high superconducting transition temperature (T _c) have been successfully fabricated at our institute employing the standard laser ablation method. In this paper, we report the results of surface characterization of the Nd123 thin films using an ultrahigh vacuum scanning tunneling microscope/spectroscopy (UHV-STM/STS) and an atomic force microscope (AFM) system operated in air. Clear spiral pattern is observed on the surfaces of Nd123 thin films by STM and AFM, suggesting that films are formed by two-dimensional island growth mode. Contour plots of the spirals show that the step heights of the spirals are not always the integer or half-integer number of thec-axis parameter of the structure. This implies that the surface natural termination layer of the films may not be unique. This result is supported byI-V STS measurements. The surface morphology of the Nd123 thin films is compared with that of thec-axis-oriented Y₁Ba₂Cu₃S_y thin films. Surface atomic images of the as-prepared Nd123 thin films are obtained employing both STM and AFM. STS measurements show that most of the surfaces are semiconductive. The results of STS measurements together with the fact that we are able to see the surface atomic images using scanning probe microscopes suggest that exposure to air does not cause serious degradation to the as-prepared surfaces of Nd123 thin films.     

Photoluminescence properties of RE-activated Na3GdP2O8 (RE = Tb, Dy, Eu, Sm) under VUV excitation

RE³⁺-activated monoclinic Na₃GdP₂O₈ (RE³⁺ = Tb³⁺, Dy³⁺, Eu³⁺, Sm³⁺) phosphors have been synthesized by a solid-state reaction method. Their photoluminescence properties in the vacuum ultraviolet (VUV) region were investigated. By analyzing their excitation spectra, the host-related absorption band was determined to be around 166 nm. The f-d transition bands and the charge transfer bands for Na₃GdP₂O₈:RE³⁺ (RE³⁺ = Tb³⁺, Dy³⁺, Eu³⁺, Sm³⁺) were assigned and corroborated. For the sample Na₃GdP₂O₈:5%Tb³⁺, the strong bands at around 202 and 221 nm are assigned to the 4f-5d spin-allowed transitions and the weak band at 266 nm is related to the spin-forbidden transition of Tb³⁺. For Na₃GdP₂O₈:5%Dy³⁺, the broad band at 176 nm could be related to the f-d transitions of Dy³⁺ and the O²⁻ → Dy³⁺ charge transfer band (CTB) besides the host-related absorption. In the excitation spectrum of Eu³⁺ doped sample, the O²⁻ → Eu³⁺ CTB is observed to be at 245 nm. For the Sm³⁺ doped sample, the O²⁻ → Sm³⁺ CTB is not distinguished obviously and is overlapped with the host-related absorption band.     

Microstructural study of YBa2Cu3O7/SrTiO3/YBa2Cu3O7 heteroepitaxial trilayer films grown on (100) SrTiO3 substrates

Detailed transmission electron microscopic study has been carried out on heteroepitaxial YBa₂Cu₃O₇/SrTiO₃/YBa₂Cu₃O₇ trilayer thin films grown on (100)SrTiO₃ substrates prepared by DC and RF magnetron sputtering. The microstructural results showed the existence of somea-axis-oriented YBCO grains 20–90 nm wide in thec-axis-oriented YBCO matrix. Some of thea-axis grains in the lower YBCO thin film layer have protruded into the above SrTiO₃ layer, which may cause short circuit between the two YBCO superconducting layers. This is unsuitable for the application of trilayer thin films for microelectronic devices. The defects on the surface of the substrates would also influence the growth quality of the YBCO thin films.     

Synthesis of GaN nanorods by ammoniating Ga2O3 films on In2O3 layer deposited on Si (111) substrates

GaN nanorods were synthesized by ammoniating Ga₂O₃/In₂O₃ thin films deposited on Si (111) with magnetron sputtering. X-ray diffraction, Scanning electronic microscope and high-resolution TEM results show that they are GaN single crystals, the sizes of which vary from 2 to 7 μm in length and 200 to 300 nm in diameter. In₂O₃ middle layer plays an important role in the GaN nanorod growth.     

Thermo-optic properties of TiO2, Ta2O5 and Al2O3 thin films for integrated optics on silicon

The direct measurement of the thermo-optic coefficients of aluminium oxide, tantalum pentoxide and titanium dioxide thin films is presented. Using ellipsometry on monolithically integrated permutations of the layers of silicon, silicon dioxide and the material under test, allows the direct measurement of the overall thermo-optic coefficient accounting for thermally induced changes in the dielectric permittivity and density of the materials as well as the elasto-optic effect due to the non-matching thermal expansion coefficients of the different materials.     

Chemical deposition of Al2O3 thin films on Si substrates

Uniform Al₂O₃ films were deposited on silicon substrates by the sol–gel process from stable coating solutions. The technological procedure includes spin coating deposition and investigating the influence of the annealing temperature on the dielectric properties. The layers were studied by Fourier transform infrared spectroscopy and Scanning Electron Spectroscopy. The electrical measurements have been carried out on metal–insulator–semiconductor (MIS) structures. The C–V curves show a negative fixed charge at the interface and density of the interface state, Dit, 3.7 × 10¹¹ eV^− 1cm^− 2 for annealing temperature at 750 °C.     

Anisotropy in ac losses near the irreversibility field of Bi2Sr2CaCu2O8

The ac susceptibility under a biased dc field near the irreversibility field (H _irr) of a Bi₂Sr₂CaCu₂O₈ single crystal has been measured. The frequency dependence, the ac-power dependence, and the nearly lossless character of the vs.H _dc curve forHa-axis have been roughly explained from a reversible (elastic) fluxoid motion, while those forH c-axis have been explained from a thermally assisted flux-flow (TAFF) model. The obtained parameters are discussed in relation to anisotropic flux-pinning mechanisms in the layered structure of this compound.     

Magnetic relaxation and critical current in Bi2Sr2CaCu2O8+x single crystals

The anisotropy of critical current densityJ _c in Bi₂Ba₂CaCu₂O_8+x single crystals has been investigated as a function both of the temperature and of the applied magnetic field. An anisotropic behavior ofJ _c has been found. The decay of the remanent magnetization has been studied for fields applied both parallel and perpendicular to thec axis. A logarithmic behavior was found. A pinning energyU ₀ of about 0.01 eV, independent of the direction of the applied field, was obtained.     

Study and fabrication of ZnNb2O6 thin films by sol-gel method

Zinc niobium oxide (ZnNb₂O₆) thin films were grown on ITO/glass substrate by sol-gel process. Microstructure and surface morphology of the ZnNb₂O₆ thin films have been studied by X-ray diffraction and scanning electron microscopy. Optical properties of the ZnNb₂O₆ thin films were obtained by UV-visible recording spectrophotometer. The dependence of the microstructure, optical transmittance spectra, optical band gap on annealing temperature was also investigated.     

Growth of La0.7Sr0.3MnO3 films on Si(0 0 1) using SrMnO3 template layer

Using RF magnetron sputtering, we have successfully grown (1 1 0) orientated La_0.7Sr_0.3MnO₃ (LSMO) films on Si(0 0 1) wafers using SrMnO₃ (SMO) as a template layer. The X-ray diffraction (XRD) patterns of the SMO/Si heterostructures indicate that SMO grows along the (1 1 0) orientation, the orientation relationship between the SMO thin film and the Si (0 0 1) substrate being given by (0 1 1)_SMO∣∣(0 0 1)_Si and [01]_SMO∣∣[0 1 0]_Si. From the XRD patterns of the LSMO/SMO/Si heterostructures, we find that with an increase of substrate temperature, the required thickness of SMO, which plays an effective role of tuning the preferential orientation of LSMO, will decrease at first and then increase. It is thought that this originates from the fact that the crystallization of SMO is not perfect at low temperatures whereas too high a temperature results in reaction and diffusion at the interface of the two layers.     

Growth and properties of highly orientated Sr0.75Ba0.25Nb2O6 thin films on silicon substrates with MgO or TiN buffer layers

Sr_0.75Ba_0.25Nb₂O₆ (SBN75) thin films were deposited on silicon substrate with MgO (100) or TiN (100) buffer layer by radio-frequency magnetron sputtering technique. X-ray diffraction confirmed that a 900 °C annealed SBN self-buffer layer introduced before SBN deposition can lead to the highly c-axis orientation of SBN75 thin film on MgO buffer layer. Energy-dispersive spectrometry analysis showed that the SBN75 films had target-film composition transfer and the TiN buffer layer was partially oxidized during SBN growth. The refractive index of SBN films on both MgO/Si and TiN/Si substrates was determined by fitting the measured reflectance curves with Sellmeier dispersion model in the visible region and the micro-structures were studied by scanning electron microscopy. In this paper, the conditions for SBN/MgO/Si treated as waveguide structure were also discussed.     

Structure, magnetic and electrical transport properties of (Fe3O4)100 − xPtx composite films

Structure, magnetic and electrical transport properties of the polycrystalline (Fe₃O₄)_100 − xPt_x composite films fabricated using DC reactive magnetron sputtering at ambient temperature were investigated systematically. It is found that the films are composed of inverse-spinel-structured polycrystalline Fe₃O₄ and Pt. Pt addition proves the growth of Fe₃O₄ grains with the (111) orientation. All the films are ferromagnetic at room temperature. The dominant magnetic reversal mechanism turns from domain wall motion to Stoner-Wohlfarth rotation with the increasing x. The electrical transport mechanism also changes with the increasing x because Pt addition decreases the height of the tunneling barrier at the Fe₃O₄ grain boundaries, and makes the magnetoresistance of the films decrease.