低温环境下FBG温度传感特性研究

在低温环境中,光纤光栅(Fiber Bragg Grating,FBG)材料的热膨胀系数和热光系数会发生改变,从而影响其温度传感特性。文章通过实验研究了裸光纤光栅传感器和黄铜管封装的光纤光栅传感器在低温下的温度传感特性。结果表明,在80~300 K温度范围,裸FBG温度传感器的灵敏度为6.43 pm/K,线性度为0.974,在80~230 K温度范围,温度与光纤光栅的中心波长呈现非线性关系;黄铜管封装的FBG温度传感器,在整个温度范围内灵敏度可达26 pm/K,线性度为0.996,较裸FBG温度传感器均有较大提升。对比实验表明,对光纤光栅进行封装,可以提高其温度灵敏度和线性度,改善温度传感特性。     

光纤Bragg光栅在77 K环境下的温度传感性能研究

进行了从液氮温度(77 K)到室温(286 K)的光纤Bragg光栅(FBG)温度传感性能的实验研究.结果表明,FBG的温敏系数与温度相关.低于210 K,FBG的温敏系数变小,这将限制低温环境下FBG作为温度传感器的使用.通过在裸FBG外部涂敷热膨胀系数为61×10-6的丙烯酸脂材料,可以显著提高FBG的温敏系数和线性度.80 K时,有丙烯酸脂包层材料的FBG温敏系数为0.015 26 nm/K,而同温度条件下裸FBG的温敏系数仅为0.00449 nm/K.     

光纤光栅温度传感增敏方法研究

针对裸光栅温度灵敏度较低的问题,设计了一种封装方式并进行结构制作。所设计的封装方式是将光纤布拉格光栅(Fiber Bragg Grating, FBG)置入毛细玻璃管中,并填充353ND环氧树脂胶,最后固定在铜片基底上。首先对FBG温度传感及增敏机理进行了理论分析,然后进行结构的设计及制作,最后进行温度传感测试。聚合物353ND和铜片的热膨胀系数显著高于裸光栅,在外界温度发生变化时会对光纤光栅施加附加应力,从而提高其温度灵敏度,并保护FBG传感器的结构。实验结果表明：在40℃至140℃的温度传感测试中,FBG的反射波长保持着不错的线性;温度灵敏度由增敏前的10 pm/℃提升到了21 pm/℃左右,且温度传感特性拟合曲线线性度达到0.996以上。     

一种高灵敏度光纤Bragg光栅温度传感器

设计了一种基于光纤Bragg光栅(FBG)的高灵敏度温度传感器,分析了它的温度传感特性。该温度传感器的灵敏度为0．474nm／℃,是裸光栅的45．9倍;线性度为0．9988;通过调节有关参数可进一步提高或选择合适的灵敏度;通过改变参数可以调节该传感的传感区段,可用于常温下的温度测量。     

光纤光栅二次涂敷封装温度特性的研究

系统研究了二次涂敷封装方案对光纤光栅（FBG）温度特性的影响。在对裸FBG温度特性进行研究的基础上,建立了FBG二次涂敷封装的双层温度模型,分析了涂敷材料的力学特性参量对涂敷后温度特性的影响。研究结果表明,高杨氏模量、高泊松比、高热膨胀系数以及大涂敷厚度有助于提高涂敷后FBG的温度灵敏度。采用聚合物材料对FBG进行了二次涂敷实验,结果表明,涂敷后的温度灵敏度为66pm／℃,与理论计算数值68．9pm／℃基本吻合,验证了双层涂敷模型计算方法的可行性。     

光纤光栅毛细钢管封装工艺及其传感特性研究

提出了一种光纤光栅 (FBG)的毛细钢管封装工艺 ,并通过材料试验和水浴法试验对其应变与温度传感特性进行了研究。与裸光纤光栅的测试结果比较表明 ,毛细钢管封装工艺基本不改变光纤光栅的应变传感特性 ,但是温度灵敏度系数提高了约 2 5倍。经过该工艺封装的光纤光栅可以探测识别 1με与 0 .0 5℃的应变与温度变化。     

钛合金片封装光纤光栅传感器的应变和温度传感特性研究

提出了一种光纤光栅（FBG）的Ti合金片的封装工艺,实验和理论研究了FBG的应变和温度传感特性。与裸FBG的测试结果相比,Ti合金片封装工艺基本不改变FBG应变传感的灵敏度,但是温度灵敏度系数提高了1.76倍。经过Ti合金片封装后的FBG可以探测到1με和0．05℃。     

光纤光栅聚合物封装工艺及性能测试

按一定比例把两种聚合物(HTC-1,THE-5)及金刚砂均匀混合后,对光纤光栅(FBG)进行封装处理,然后分别对其应变、温度、抗压强度等特性进行研究;封装后光纤光栅的应变和温度传感线性度非常好,均达到0.99以上,应变线性范围超过8000微应变,与裸光纤光栅的测试结果相比灵敏度系数提高了3.5倍,温度灵敏度系数提高7倍左右,抗压强度为65MPa,完全满足土木结构的智能监测需要。     

FRP-FBG智能复合板的制作及其传感器特性研究

结合纤维增强聚合物(FRP)材料的强度特性和光纤布拉格光栅(FBG)的感知特性,研制开发了FRP-FBG智能复合板.阐述了FBG的应变和温度传感原理,研究了FRP-FBG智能复合板的制作工艺,通过标准材料试验和水浴法试验分析了该智能复合板的应变和温度传感特性.结果表明:与裸FBG相比,FRP-FBG智能复合板基本不改变FBG的应变传感特性,但温度传感系数却提高了约2.2倍;基于目前的光栅解调系统,该智能复合板可以探测识别1 με与0.03 ℃的应变与温度变化.     

金属化封装光纤光栅传感器超低温特性研究

传统胶封光纤光栅(Fiber Bragg Grating,FBG)传感器的胶黏剂在超低温环境中存在着板结、与基体间热失配等问题。针对胶封光纤光栅传感器在超低温条件下进行测量的局限性,本文设计一种全金属化封装结构,并采用超声焊接的方法将光纤光栅封装固定于特种铝合金基底表面。在-160～0 ℃环境下,对两支FBG温度传感器的超低温传感特性进行了实验测试。结果表明,该封装形式的FBG传感器的线性度较好,相关系数均在0.99以上。它们的温度灵敏度系数在线性变化区间平均值分别为27.88 pm/℃和26.17 pm/℃,分别是封装前裸光纤光栅的2.75倍和2.58倍左右,提高了温度灵敏度。此金属化封装的FBG温度传感器的工艺简单,易于实现,可用于超低温恶劣环境下的温度测量。     

Temperature influence on performance degradation of hydrogenated amorphous silicon solar cells irradiated with protons

This paper reports temperature influence on radiation degradation of hydrogenated amorphous silicon (a‐Si : H) solar cells. Degradation behaviors of a‐Si : H solar cells irradiated with protons at 331 K are compared with that at 298 K (room temperature). Variations with time in the post‐irradiation electrical properties are also investigated. It is found that the radiation degradation of the electrical properties at 331 K is significantly smaller than that at room temperature. Also, all the electrical properties (short‐circuit current, open‐circuit voltage, output maximum, and fill factor) recover with time after irradiation even at room temperature. The characteristic time of thermal annealing of short‐circuit current is larger as the temperature is higher. These results indicate that temperature during irradiation and elapsed time from irradiation to measurement is an important parameter for radiation degradation of a‐Si : H solar cells. Therefore, these parameters should be controlled in conducting the ground radiation tests. Copyright © 2012 John Wiley & Sons, Ltd.     

强激光辐照下生物组织的瞬态温度场研究

研究生物组织在强激光作用下的瞬态温度分布,探讨强激光作用下生物组织的热传输规律,采用数值方法中的有限差分法求解热传导方程,得出了生物组织纵切面上温度的时空分布图、生物组织轴向温度按指数规律降低及径向上温度按偶次方幂函数规律变化,根据纵切面上温度时空分布图估算出热损伤深度,当激光功率密度分别为175W／cm^2和298W／cm^2时,热损伤深度分别为0．28mm和0．24mm,其值与相关实验值较好地符合。     

Interfacial thermal resistance and temperature dependence of threeadhesives for electronic packaging

The thermal resistance and its temperature dependence was measured for three industrial adhesives used for electronic packaging. Measurements were made by the laser-flash method from room temperature to 300°C. The samples were in the form of sandwiches consisting of two platelets of silicon carbide-reinforced aluminum (AlSiC) bonded together with the adhesives. The total thermal resistance of the bond (the sum of the bulk thermal resistance of the adhesive and the resistances at the two interfaces) was calculated from the thermal response of the sandwich subjected on one side to a single laser-flash. The total thermal resistance was found to decrease with increasing temperature. The bulk thermal resistance of the adhesive, calculated from its thickness and independently determined thermal conductivity, was found to be relatively independent of temperature. The interfacial resistance at the AlSiC interfaces, depending on the adhesive, ranged from about 60 to 80% of the total resistance decreasing to about 50% of the total interfacial resistance at 300°C. For two of the adhesives considered in this study, the interfacial thermal resistances for the AlSiC/adhesive interfaces were found to be considerably higher than those found in an earlier study of Si/adhesive interfaces     

Low-temperature (77 K) BJT model with temperature dependences onthe injected condition and base resistance

A low-temperature (77-K) bipolar transistor model based on physical analysis by considering the temperature dependences of the injection condition and base resistance modulation is described. A charge-based injection factor which describes the temperature dependence of the ideality factor n is introduced by taking into account the electron and hole concentration ratios at the edges of the emitter-base depletion layer. The temperature dependence of base resistance modulation is explained by using the temperature dependences of the conductivity modulation effect, the base pushout effect, and the emitter current-crowding effect. Calculations using the model are compared with measurements, revealing excellent agreement over a wide temperature range from 50 to 298 K     

Debye temperature and standard entropies and enthalpies of compound semiconductors of the type I-III-VI2

The heat capacities at constant pressure have been measured for CuInSe₂, CuInTe₂ and AgGaTe₂ in the temperature range 1K ≤T≤40K and for CuInS₂ and AgInTe₂ between 1 K and room temperature. From the low temperature data we derive the following Debye temperatures θ_D in the limit T → O K: θ_D(CuInS₂) = 273 K, θ_D(CuInSe₂) = 222 K, θ_D(CuInTe₂) = 191 K, θ_D(AgGaTe₂) = 182 K and θ_D(AgInTe₂) = 156 K. A plot of the average atomic heat capacity at constant volume C_v shows that the data scale to one general curve for all 5 compounds considered in this paper. This is, also, true for a plot C_v, i.e., all I-III-VI₂ compounds measured thus far deviate similarly from the Debye approximation. By integration of the general curves C_v(T/θ_D) and θ_D x C_v(T/θ_D) we derive tne standard entropies S ₀ ²⁹⁸ and energies E ₀ ²⁹⁸ -E ₀ ⁰ of 11 compounds of the type I-III-VI₂, for which the Debye temperatures are known. The difference between the energies E ₀ ²⁹⁸ -E ₀ ⁰ and enthalpies H ₀ ²⁹⁸ -H ₀ ⁰ is within the error limits of the experimental data (< 1%). The molar S ₀ ²⁹⁸ and H ₀ ²⁹⁸ -H ₀ ⁰ values for the I-III-VI₂ compounds are approximately twice the corresponding molar values for their II-VI isoelectronic analogs. The thermodynamic functions at standard state obtained by integration of the experimental data are all < 10% smaller than the corresponding values estimated on the basis of the Debye approximation.     

Temperature Dependence of High Frequency and Noise Performance of Sb-Heterostructure Millimeter-Wave Detectors

The temperature dependence of the microwave and noise performance of zero-bias Sb-heterostructure backward diodes for millimeter-wave detection have been investigated experimentally. Both the junction capacitance and junction resistance were found to decrease with decreasing temperature, while the intrinsic cutoff frequency and sensitivity are observed to increase as the temperature is lowered. A simple physical model that captures these effects is described. The directly measured voltage sensitivity at 50 GHz for a 2times2 mum ² device increased from 3650 V/W at room temperature to 7190 V/W at 4.2 K. The measured noise equivalent power (NEP) decreased from 4.2 to 0.2 pW/Hz^1/2 as the temperature was lowered from 298 K to 4.2 K when driven from a 50- Omega source. Based on the measured RF sensitivity, S-parameters, and noise spectrum, a NEP of 0.3 pW/Hz^1/2 is projected for room-temperature operation at zero bias using a conjugately matched RF source     

基于IGBT模块饱和压降温度特性的结温探测研究

实验室条件下,IGBT模块的结温探测是瞬态热阻抗测试的关键。首先分别在热稳态和热瞬态下证明了饱和压降温度特性只与芯片有关,然后建立了IGBT模块结温探测模型,利用饱和压降值和集电极电流值来计算结温值,并将用模型计算出的结温与光纤实测的结温相比较,吻合性良好,证明了模型计算法能够准确探测结温。该方法可以用于恒流加热过程中瞬态热阻抗的测量,比起热敏参数法中冷却过程测量瞬态热阻抗相比,更具有实际意义。     

Transient temperature measurements and modeling of IGBT's undershort circuit

This paper discusses the estimation of possible device destruction inside power converters in order to predict failures by means of simulation. The study of insulated gate bipolar transistor (IGBT) thermal destruction under short circuits is investigated. An easy experimental method is presented to estimate the temperature decay in the device from the saturation current response at low gate-to-source voltage during the cooling phase. A comparison with other classical experimental methods is given. Three one-dimensional thermal models are also studied: the first is a thermal equivalent circuit represented by series of resistance-capacitance cells; the second treats the discretized heat-diffusion equation; and the third is an analytical model developed by building an internal approximation of the heat-diffusion problem. It is shown that the critical temperature of the device just before destruction is larger than the intrinsic temperature, which is the temperature at which the semiconductor becomes intrinsic. The estimated critical temperature is above 1050 K, so it is much higher than the intrinsic temperature (~550 K). The latter value is underestimated when multidimensional phenomena are not taken into account. The study is completed by results showing the threshold voltage and the saturation current degradation when the IGBT is submitted to a stress (repetitive short circuit)     

非晶硅室温微测辐射热计的研制

将聚酰亚胺作为绝热材料,对传统室温微测辐射热计结构进行了改进,成功制备了非晶硅室温微测辐射热计并进行了测试。以聚合物材料作为绝热材料,避免了表面牺牲层工艺和体加工技术,降低了成本、提高了成品率。在传统探测器结构基础上,在底部制备一层金属用作红外反射层,利用吸收层可以对红外辐射进行二次吸收。金属层和有源层间的隔离层对红外也有很好的吸收效果,由隔离层、有源层和钝化层构成三明治结构,可以显著改善对红外辐射的吸收。对器件的制备工艺进行了说明并对器件特性进行了测试,结果表明,在773 K黑体源8～14 μm红外辐射下,探测器的响应度最大为26.4 kV/W,表明器件具有较高的性能。     

激光输能光电池温度场数值模拟

温升效应是影响激光输能光电转换效率的重要原因。为了分析温升效应对光电转换效率的影响,采用基于COMSOL Multiphysics多物理场耦合软件和MATLAB软件联合仿真的数值模拟方法,建立了光电池的物理模型和热模型,得到了激光辐照时间、功率密度、光斑面积、入射角以及热辐射和热对流对温度场的影响结果。结果表明,2000W/m2激光功率密度辐照下,光电池温度随辐照时间先快速上升,20s后缓慢增加,100s达到热平衡态后温度稳定在343K;随着激光功率密度增大,电池温升速度越快,达到热平衡态时的温度值越高;激光光斑全部覆盖电池表面时,电池表面温度差值最小;入射角通过影响有效激光辐照功率密度来影响电池温升;热辐射和热对流对降低光电池温度十分有利;当激光入射角为0°、激光功率密度辐照约为2000W/m2、激光光斑面积近似为电池表面面积时,光电池能获得最佳的光电转换效率。可见对光电池温度场进行仿真分析为研究提高激光输能光电转换效率的方法提供了理论参考。