共查询到18条相似文献,搜索用时 78 毫秒
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据《信学技报》(日)2009年109(109)期报道,日本佐贺大学研究了耿氏二极管高次谐波振荡器的低噪声技术。新开发的振荡器由slot line谐振器、耿氏二极管和微带线构成。通过平面电路设计使电路简易化和小型化,振荡器由原来的圆形改变为方形。4只耿管在偏压9 V、偏流230 mA测试时,高次谐波18.75 相似文献
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介绍了一种InP衬底上的平面In0.53Ga0.47As耿氏二极管的设计、制作和测试方法。为了提高器件的输出功率,使用Advanced Design System 2011仿真软件设计了50 ?共面波导馈电结构作为器件电极,减少测试功率损耗;同时在版图设计时加大了金属电极面积,改善器件的散热效果。测试结果表明,当所加电压为4.4 V时,沟道长度和宽度分别为2 μm和120 μm器件的基波振荡频率为168.3 GHz,输出功率为-5.21 dBm。这种高功率平面结构耿氏二极管在太赫兹频段具有巨大的应用潜力。 相似文献
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介绍基于耿氏效应的器件在太赫兹领域的研究,详细地阐述耿氏二级管的原理、工艺流程、关键技术的解决和耿氏二极管频率和功率的提高等.重点介绍耿氏二极管的封装工艺和耿氏二极管腔体的具体结构.系统论述通过制备腔体需要的关键尺寸,如腔体内部尺寸、波导型号,从而提取基波与谐波,并提出其提高频率和功率的途径. 相似文献
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一种高性能体效应管电调振荡器 总被引:1,自引:0,他引:1
本文介绍了一种高性能W波段高频端Gunn振荡器.其基波和二次谐波共用一个波导振荡腔,基波频率低于W波段波导截止频率,机械调节频宽100~115GHz,输出功率大于5mW,最大可达18.5mW,线性电调范围大于250MHz.该振荡器用于三毫米锁相系统和大型毫米波望远境2.6mm波段的锁相本振系统. 相似文献
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新型双区阴极结构体效应二极管 总被引:1,自引:1,他引:0
常规的GaAs体效应二极管的阴极结构多采用欧姆阴极,在毫米波频段(W 波段),器件的转换效率小于1%.介绍了一种新型的双区阴极结构在W 波段体效应二极管中的实现,并研制出了样品器件.采用此种结构,可以显著提高毫米波器件的输出功率和转换效率. 相似文献
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Z. Cai S. Garzon M.V.S. Chandrashekhar R.A. Webb G. Koley 《Journal of Electronic Materials》2008,37(5):585-592
We report on the growth of high-quality InN nanowires by the vapor–liquid–solid mechanism at rates of up to 30 μm/h. Smooth and horizontal nanowire growth has been achieved only with nanoscale catalyst patterns, while large-area catalyst
coverage resulted in uncontrolled and three-dimensional growth. The InN nanowires grow along the [110] direction with diameters
of 20 to 60 nm and lengths of 5 to 15 μm. The nanowires bend spontaneously or get deflected from other nanowires at angles that are multiples of 30°, forming nanonetworks.
The gate-bias-dependent mobility of the charge carriers ranges from 55 cm2/V s to 220 cm2/V s, and their concentration is ∼1018 cm−3. 相似文献
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C.C. Huang R.W. Chuang S.J. Chang J.C. Lin Y.C. Cheng W.J. Lin 《Journal of Electronic Materials》2008,37(8):1054-1057
We report the growth of InN by metalorganic chemical vapor deposition on Si(111) substrates. It was found that the sharpest
InN(002) x-ray diffraction peak could be achieved from the sample prepared on a complex buffer layer that consists of a low-temperature
AlN, a graded Al
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Ga1−x
N (x = 1 → 0), and a high-temperature GaN. The resultant mobility of 275 cm2/V s thus obtained was 75% larger than that of the InN prepared on a single LT-AlN buffer layer only. 相似文献
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This work reports the growth of c-plane textured InN thin films on Cu-ZnO buffered silicon, c-sapphire, bulk GaN and quartz substrates. A Cu-ZnO buffer layer was deposited on all the substrates before the growth of InN film. A highly c textured film was obtained on sapphire and quartz substrates. Structural properties were calculated using XRD and Raman analysis. It was observed that, induction of Cu-ZnO buffer layer reduced the lattice mismatch between Si/GaN substrates and InN film. The bandgap of the films was obtained using UV visible reflectance spectroscopy. Hall measurements show high mobility films in the range of 119–223 cm2/Vs and an electron concentration of 1019. These results are in good agreement with previous results but are first time recorded using RF magnetron sputtering. Surface topography of the films showed smooth surfaces, which are due to reduced lattice mismatch between film and the substrate. 相似文献
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以解析公式的推导、位移损伤实验结果以及位移效应的数值模拟结果为基础,分析了位移效应产生的缺陷作为非辐射复合中心和多数载流子陷阱两种情形下的激光二极管阈值电流、外微分量子效率及I-V特性随辐照注量的变化规律。通常的实验注量范围内,缺陷主要作为非辐射复合中心,导致激光二极管阈值电流随注量呈线性增大,但外微分量子效率基本不变,I-V特性低压区电流增大;当辐照注量较高,引起明显的多数载流子去除效应时,阈值电流随注量的增大不再呈线性关系,同时外微分量子效率下降,I-V特性高压区的电流减小。 相似文献