紫外压印模版的制备

概述了紫外压印的原理及其优点,并通过对紫外压印模版特殊性的分析,提出了两种紫外压印模版的制作。用反应离子刻蚀法制作了玻璃模版,用浇灌法制作了聚二甲基硅氧烷(PDMS)模版,最后给出了实验过程和结果。实验表明,用反应离子刻蚀法可以制作出具有100 nm特征尺寸、图形的深度为50 nm的玻璃模版,而且通过控制刻蚀时间可以得到需要的图形深度。用浇灌法可以制作出具有100 nm特征尺寸、图形深度为145 nm的聚合物模版。     

纳米压印光刻技术--下一代批量生产的光刻技术

纳米压印光刻技术已被证实是纳米尺寸大面积结构复制的最有前途的下一代技术之一。这种速度快、成本低的方法成为生物化学、μ级流化学、μ-TAS和通信器件制造以及纳米尺寸范围内广泛应用的一种日渐重要的方法,如生物医学、纳米流体学、纳米光学应用、数据存储等领域。由于标准光刻系统的波长限制、巨大的开发工作量、以及高昂的工艺和设备成本,纳米压印光刻技术可能成为主流IC产业中一种真正富有竞争性方法。对细小到亚10nm范围内的极小复制结构,纳米压印技术没有物理极限。从几种纳米压印光刻技术中选择两种前景广阔的方法——热压印光刻(HEL)和紫外压印光刻(UV-NIL)技术给予介绍。两种技术对各种各样的材料以及全部作图的衬底大批量生产提供了快速印制。重点介绍了HEL和UV-NIL两种技术的结果。全片压印尺寸达200mm直径,图形分辨力高,拓展到纳米尺寸范围。     

纳米压印光刻技术

为了避免纳米压印光刻技术与光刻技术混淆，纳米压印光刻技术严谨的专业术语定义是：不使用光线或者辐射使光刻胶感光成形，而是直接在硅衬底或者其他衬底上利用物理学机理构造纳米级别的图形。这种纳米成像技术真正地实现了纳米级别的图形印制。     

基于湿法刻蚀的MEMS压印模版制作

介绍了一种基于玻璃湿法刻蚀低成本的MEMS压印模版制作工艺,工艺中以单层光刻胶作为刻蚀掩模,重点研究了改善刻蚀图形几何轮廓和提高表面质量的方法。在对钻蚀形成机理进行分析的基础上,通过对比偶联剂不同涂敷方式及不同蒸镀时间对刻蚀结果的影响,优化了硅烷偶联剂的涂敷工艺,使钻蚀率降低到0.6,图形几何形状得到改善。分析了刻蚀生成物的溶解度,采用HCl作为刻蚀液添加剂对刻蚀产生的难溶物进行分解,提高了表面质量。对刻蚀表面缺陷的形成原因进行了分析,采用厚胶层工艺消除了表面缺陷。利用该工艺制作了图形特征尺寸为100μm的MEMS压印模版,并进行了初步压印实验,得到了很高的复型精度。     

纳米压印技术的工艺和图形精度研究

纳米压印技术通过压印实现了纳米结构的图形转移,具有分辨率高、效率高、成本低的优点。通过对纳米压印过程中影响图形精度的一些因素进行分析,提出了相应的解决方法。结合研制的NIL-01型压印机进行工艺实验,给出纳米压印工艺实验的结果,并对结果进行了分析。试验表明：考虑到影响压印图形精度的各种因素,采用镀有Cr的SiO2模版和NIL-01型压印机,用热压印技术可以压印出具有100nm特征尺寸的PMMA图形。     

热压印技术制作纳米光栅

通过分析脱模过程的摩擦力,讨论了模具表面处理工艺与压模质量的关系,给出了降低脱膜过程摩擦力的工艺方法.实验结果表明,用类聚四氟乙烯膜作为脱模剂能大大减小模具表面与聚合物表面的摩擦力.研究了压模、脱模工艺参数对实验结果的影响,基于HEX-02塑铸系统,真空条件下,在压模温度为195℃,模压压强为8 MPa的环境下,利用热压印技术在PMMA薄膜上复制出周期为120 nm的纳米光栅.     

纳米压印技术

传统光学光刻技术的高成本促使科学家去开发新的非光学方法,以取代集成电路工厂目前所用的工艺.另外,微机电系统(MEMS)的成功启发科学家借用MEMS中的相关技术,将其使用到纳米科技中去,这是得到纳米结构的一种有效途经.纳米压印在过去的几年里受到了高度重视,因为它成功地证明了它有成本低、分辨率高的潜力.纳米压印技术主要包括热压印、紫外压印(含步进-闪光压印)和微接触印刷等.本文详细讨论纳米压印材料的制备及常用的三种工艺的工艺步骤和它们各自的优缺点.并对这三种工艺进行了比较.最后列举了一些典型应用,如微镜、金属氧化物半导体场效应管、光栅等.     

纳米压印光刻中模版与基片的平行调整方法

概述了纳米压印光刻的原理，以及纳米压印光刻工艺中模版与基片的平行度对压印质量的影响，分析了国内外几种纳米压印光刻工作台的结构与特点，并对其优缺点进行了评价。     

纳米压印光刻技术及其发展现状

文章详细介绍了有望成为下一代主流的光刻技术——纳米压印光刻技术。并概述了其应用, 同时介绍了其在现阶段的发展状况。     

热压印光刻技术复制波带片图形研究

针对只需单次曝光的菲涅尔波带片器件,给出了结合电子束光刻和热压印光刻进行大规模复制的完整工艺路线,即首先采用电子束光刻制作热压印模版,之后用热压印光刻进行波带片的大规模复制,所制得的波带片图形的最外环宽度为250 nm,直径为196μm,环数为196环.初步实验结果表明,这种方法具有很好的重复性和易用性,且可以进行低成本波带片的精确复制.     

应用传统紫外光刻机进行紫外压印

基于紫外光固化的紫外纳米压印技术可在常温常压条件下实现纳米结构批量复制,具有高分辨率、高效率和低成本的优点。通过对紫外纳米压印原理和工艺的分析,制备了石英玻璃模板,实现了在商用紫外固化聚合物OG154上的紫外纳米压印,转移复制了具有100nm特征的5cm×5cm面积的纳米结构图形。同时,介绍了如何利用传统紫外光刻机的套刻对准系统进行紫外纳米压印和套刻对准的方法。     

Nanoimprint lithography fabrication of waveguide-integrated optical gratings with inexpensive stamps

We demonstrate that a replica grating can be effectively used as an inexpensive stamp for nanoimprint lithography to pattern diffractive optical couplers integrated with planar optical waveguides. Imprinted grating patterns were integrated with silicon oxynitride waveguide films to be used as an evanescent wave sensor in the input grating-coupler configuration. An anti-adhesion layer using an inexpensive, two-step chemical functionalization was developed for the stamps. The stamps were able to withstand imprint temperatures ranging from 140 to 190 °C and high fidelity imprints were obtained. The groove pattern was integrated in waveguide films by etch transfer and light-coupling properties of gratings with 1.2 μm pitch were tested using a λ = 1.55 μm laser. Compared to etched silicon masters, replica optical gratings provide uniform pattern density over their entire surface with no unstructured regions, are inexpensive, and readily available for R&D use.     

低温纳米压印技术制备微纳图案的研究

纳米压印需要将聚合物加热到它的玻璃化温度以上,然后用印章压印使其复制印章图案.采用低玻璃化温度的SU-82000.1和Hybrane胶体转移图案,能够在低温、甚至室温下实现微纳图案的转移.采用的印章制备方法是聚焦离子束(FIB)直接在衬底上制备图案,从而避免了传统工艺中效率较慢的电子束加工和取消了反应离子刻蚀步骤;并且采用FIB方法可同时在衬底上制备微米、纳米尺度的图案.实验结果表明用FIB方法可以得到比较均匀致密的微纳米图案印章,经过低温纳米压印后可成功地实现微纳图案的复制.     

Nanoimprint in PDMS on glass with two-level hybrid stamp

In this article we examine the use of two-level hybrid-material stamps and nanoimprint lithography (NIL) of poly(dimethylsiloxane) (PDMS) on glass substrates. A silicon/SU8 stamp manufacturing process has been developed, in order to combine nanometer and micrometer structures, thus avoiding complex deep etching processes. The stamp has been test printed in polymethyl methacrylate (PMMA) to demonstrate functionality. We describe polymer flow problems for imprinting large structures and identify optimized parameters, in accordance with previously published findings. The use of PDMS as imprint polymer was examined. Imprinting works well, however, large recovery after separation shrinks the micrometer channels substantially and renders the nanochannels useless. Glass substrates in combination with silicon stamps were used, evaluated and showed to work well at low temperature.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

纳米压印光刻胶

光刻胶是纳米压印的关键材料,其性能将影响压印图形复制精度、图形缺陷率和图形向底材转移时刻蚀选择性。提出了成膜性能、硬度黏度、固化速度、界面性质和抗刻蚀能力等压印光刻胶的性能指标。并根据工艺特点和材料成分对光刻胶分类,介绍了热压印光刻胶、紫外压印光刻胶、步进压印式光刻胶和滚动压印式光刻胶的特点以及碳氧类纯有机材料、有机氟材料、有机硅材料做压印光刻胶的优缺点。列举了热压印、紫外压印、步进压印工艺中具有代表性的光刻胶实例,详细分析了其配方中各组分的比例和作用。介绍了可降解光刻胶的原理。展望了压印光刻胶的发展趋势。     

基于纳米压印的超材料近红外吸收器的制备研究

超材料吸收器的高吸收率源于表面金属颗粒与介质层之间产生的局域等离激元共振以及由金属颗粒--介质层--金属反射层构成的微腔所导致的共振吸收。其吸收特性与金属颗粒的尺寸、形貌和介质层的材料和厚度密切相关。设计优化了一个在近红外波段1.2 μm处具有近完美吸收的超材料吸收器。以该设计为蓝图,利用纳米压印技术制备了一系列具有不同介质层厚度的器件,并利用红外反射谱定量研究了这些器件的吸收特性。实验结果证实,用纳米压印技术制备的超材料器件具有工艺可靠性好、加工精度高等优点。实验测得的吸收率变化趋势与理论预期相符,吸收率较高。     

The influence of stamp deformation on residual layer homogeneity in thermal nanoimprint lithography

This work studies the relation between the residual layer thickness and the patterned area size, fill factor and stamp thickness for identical stamps with opposite polarity (positive and negative) made in silicon and nickel. Important and different variations in the homogeneity of the residual layer are obtained in comparison with the values predicted by the theory. This will help to optimize stamp designs and choose appropriate process setups and parameters for nanoimprint with improved pattern transfer capability.     

Siloxane Copolymers for Nanoimprint Lithography

Presented here is the novel use of thermoplastic siloxane copolymers as nanoimprint lithography (NIL) resists for 60 nm features. Two of the most critical steps of NIL are mold release and pattern transfer through dry etching. These require that the NIL resist have low surface energy and excellent dry‐etching resistance. Homopolymers traditionally used in NIL, such as polystyrene (PS) or poly(methyl methacrylate) (PMMA), generally cannot satisfy all these requirements as they exhibit polymer fracture and delamination during mold release and have poor etch resistance. A number of siloxane copolymers have been investigated for use as NIL resists, including poly(dimethylsiloxane)‐block‐polystyrene (PDMS‐b‐PS), poly(dimethylsiloxane)‐graft‐poly(methyl acrylate)‐co‐poly(isobornyl acrylate) (PDMS‐g‐PMA‐co‐PIA), and PDMS‐g‐PMMA. The presence of PDMS imparts the materials with many properties that are favorable for NIL, including low surface energy for easy mold release and high silicon content for chemical‐etch resistance—in particular, extremely low etch rates (comparable to PDMS) in oxygen plasma, to which organic polymers are quite susceptible. These properties give improved NIL results.