烧成工艺对CaCu3Ti4O12陶瓷介电性能的影响

采用短时间烧结制备了CaCu3Ti4O12(CCTO)陶瓷,并详细研究了预烧温度、烧结温度等工艺对结构和性能的影响。研究了εr和tanδ随测试频率(20Hz～1MHz)、温度(25～150℃)的变化规律。结果表明:CCTO陶瓷的性能对烧成工艺非常敏感。较低的预烧温度较容易获得高εr(εr为11248)的CCTO陶瓷。     

Ba2+掺杂对CaCu3Ti4O12陶瓷结构与电性能的影响

采用传统固相法制备了Ca1-xBaxCu3Ti4O12(x=0, 0.005, 0.010, 0.020, 0.030, 0.040, 0.050, 0100,摩尔分数) 陶瓷。用X线衍射仪、扫描电子显微镜、介电温谱测试系统及阻抗测试仪研究了Ba2+掺杂量的变化对Ca1-xBaxCu3Ti4O12陶瓷的相结构、微观形貌及电性能影响。研究结果表明,随着Ba2+掺杂量的增加,陶瓷试样产生了第二相CuO,同时Ba2+掺杂使CaCu3Ti4O12的晶格常数增大。Ca1-xBaxCu3Ti4O12陶瓷的晶粒尺寸随Ba2+掺杂量的增加而减小,气孔率随之降低。掺杂适量的Ba2+可有效降低CaCu3Ti4O12陶瓷的介电损耗,也可降低相对介电常数随温度的变化率。一定量的Ba2+掺杂还能增加CaCu3Ti4O12的晶界电阻。     

Preparation and Characterization of Silica-Coated CaCu3Ti4O12

Silica was homogeneously coated on the surface of CaCu₃Ti₄O₁₂ (CCTO) particles via the sol–gel method. The obtained powders were characterized by x-ray diffraction analysis, Fourier-transform infrared spectroscopy, transmission electron microscopy (TEM), energy-dispersive spectroscopy, scanning electron microscopy, and zeta potential analysis. The results demonstrate that there were silica layers on the surface of the CCTO particles. Physical and dielectric properties of silica-coated CCTO were also studied. TEM imaging showed that the thickness of the silica layer on the CCTO particles was about 20 nm to 35 nm. The specimen coated with 1.0 wt.% silica showed the maximum relative density of 96.7% with high dielectric constant (12.78 × 10⁴) and low dielectric loss (0.005) at 20°C after sintering at 1000°C for 6 h.     

Effects of Carbon Coating on Microstructure and Dielectric Properties of CaCu3Ti4O12

CaCu₃Ti₄O₁₂ (CCTO) powders coated with carbon were synthesized by using a high-energy ball milling method. The obtained samples were characterized by x-ray diffraction, transmission electron microscopy and scanning electron microscopy. The carbon-coated CCTO particles had a rough surface, which resulted from the growth of the carbon coating on the CCTO particles. It was found that the CCTO phase was observed as the major phase and no reaction occurred between the carbon and CCTO during the sintering process. The grain size of the CCTO ceramics decreased with the increase in carbon content, which indicated that carbon inhibits grain growth of CCTO ceramics. Specially, the dielectric constant decreased with the increase in carbon content. And CCTO1 ceramic (mass ratio of CCTO: carbon = 10:1) showed a lower dielectric constant (3.74 × 10⁴), with the dielectric loss value (0.04) much lower than that of CCTO at 20°C (10 k Hz).     

高介电材料CaCu3Ti4O12光电子能谱研究

采用固相反应法制备了CaCu3Ti4O12(CCTO)高介电陶瓷材料,X-射线衍射的结果表明,制备的样品为体心立方结构,晶格常数a=0.737 8 nm。光电子能谱研究结果显示,在CCTO样品中出现了Cu3 和Ti3 ,O1s芯能级谱出现双峰特征。     

Bi4Ti3O12掺杂对BST陶瓷性能和结构的影响

研究了Bi4Ti3O12(2%～10%,质量分数)掺杂对(Ba0.71Sr0.29)TiO3(BST)基电容器陶瓷介电常数εr、介质损耗tan δ、容温变化率△C/C等性能及其烧结温度的影响.结果表明,当w(Bi4Ti3O12)=10%时,εr为2 558,tan δ为0.005 0,△C/C=-39.2%,△C/C在25～125℃的范围内比在w(Bi4Ti3O12)=2%时降低了18%,陶瓷的烧结温度降为1 180℃.借助SEM和XRD研究了Bi4Ti3O12掺杂量对样品的显微结构和物相组成的影响,表明Bi4Ti3O12作为烧结助剂包裹晶粒并填充晶粒间形成异相,阻止晶粒生长并细化晶粒.     

固相反应烧结法制备CCTO陶瓷

采用固相反应烧结法制备了CaCu3Ti4O12(CCTO)陶瓷,研究了其烧结性能、结构和介电性能。在1120℃烧结即可获得单相CCTO致密陶瓷,其收缩率高达22.3%。εr随着烧结温度升高而明显增大,且具有明显的频率敏感性,利用复阻抗谱分析了CCTO陶瓷的介电特性。于1120℃,烧结3h制备的CCTO陶瓷的εr为3005(室温,1kHz)。     

Zn取代Cu对CCTO陶瓷高、低频介电性能的影响

采用传统固相法制备了CaCu_((3-x))Zn_xTi_4O_(12)(CCTO,x=0,0.04,0.08,0.12)陶瓷。用X线衍射仪和扫描电子显微镜研究了Zn~(2+)掺杂含量的变化对CaCu_((3-x))Zn_xTi_4O_(12)陶瓷的相结构、微观形貌的影响规律,并研究了CaCu_((3-x))Zn_xTi_4O_(12)陶瓷的低、高频介电性能。结果表明,少量Zn~(2+)的加入影响CaCu_((3-x))Zn_xTi_4O_(12)陶瓷的相结构和微观形貌。在低频范围内,CaCu_((3-x))Zn_xTi_4O_(12)陶瓷均具有巨介电常数(>104),且CaCu_(2.92)Zn_(0.08)Ti_4O_(12)陶瓷的介电常数温度依赖性小,介电损耗最小,这加速了CCTO陶瓷在陶瓷电容器方向应用的潜力。在微波频段(5.85~8.2GHz)范围内,CaCu_((3-x))Zn_xTi_4O_(12)陶瓷均具有介电弛豫现象,CaCu_((3-x))Zn_xTi_4O_(12)陶瓷的介电常数实部随掺杂量的增加而减小,介电常数虚部和损耗对应的频率变化趋势与实部一致。     

ZnO对BaSm_2Ti_4O_(12)陶瓷性能的影响

讨论了Zn O对Ba Sm2Ti4O12介质陶瓷烧结机制和微波介电性能的影响。结果表明:Zn O添加能推动Ba Sm2Ti4O12微波介质陶瓷的烧结,可至少将其烧结温度降低至1 280℃。当添加过多的Zn O时,Zn2+会进入晶格,可能导致晶格畸变,由此造成颗粒间产生微小孔隙及晶格内形成许多缺陷,降低了材料的εr和Q×f值。含0.5 wt%Zn O的Ba Sm2Ti4O12试样在1 280℃烧结时,综合介电性能最好:εr=76.46,Q×f=6 334 GHz。     

铁电钛酸铋超微粉及陶瓷的研究

采用类溶胶－凝胶方法制备了铁电Ｂｉ４Ｔｉ３Ｏ１２超微粉，分别用Ｘ射线衍射、透射电子显微镜、激光散射粒度仪和差热分析仪对其结构、形貌、粒度和相变特性进行了测试分析。结果表明，超微粉形成了正交晶系Ｂｉ４Ｔｉ３Ｏ１２结构，晶粒尺寸为１０～５０ｎｍ。由微粉制备了Ｂｉ４Ｔｉ３Ｏ１２陶瓷，其介电常数和损耗角正切分别为ε＝１０５．６和ｔｇδ＝０．０５２（１００Ｈｚ）及ε＝９７．２和ｔｇδ＝０．０００３６（４ＭＨｚ），铁电参数矫顽电场Ｅｃ为２．９１×１０６Ｖ／ｍ，剩余极化强度Ｐｒ为７×１０－３Ｃ／ｍ２。     

熔盐法制备Bi4Ti3O12的研究

采用NaCl-KCl熔盐法制备了各向异性的Bi4Ti3O12粉体和陶瓷，研究了熔盐含量对粉体尺寸、形貌以及陶瓷的显微组织结构和介电性能的影响。结果表明采用熔盐法可制备出纯Bi4Ti3O12相的粉体和陶瓷，随熔盐含量增加，钛酸铋粉体尺寸及各向异性的程度明显增大；烧结后的Bi4Ti3O12陶瓷晶粒呈片状，且随熔盐含量的增加，钛酸铋陶瓷产生织构；对陶瓷介电性能的研究表明随熔盐含量增加，钛酸铋陶瓷的绝缘电阻率和介电常数增大，介电损耗减小．     

Improvement of Temperature Stability,Dielectric Properties and Nonlinear Current-Electric Field Characteristic of CaCu 3 Ti 4.2−x Sn x O 12 Ceramics

The dielectric properties and the nonlinear current density–electric field (J–E) relationship of CaCu3Ti4.2−xSnxO12 (x = 0.00, 0.05 and 0.10) ceramics at various sintering temperatures are presented. Excellent dielectric properties with a very low tanδ ∼ 0.008–0.020, a giant ε′ ∼ 6495–16,975, and stability of Δε′ of < ± 15% over the temperature range of −60 to 210°C are obtained in a CaCu3Ti4.15Sn0.05O12 ceramic sintered at 1080°C and CaCu3Ti4.10Sn0.10O12 ceramics sintered at both 1080°C and 1100°C. Additionally, all ceramics exhibited a nonlinear J–E relationship. A maximal nonlinear coefficient (α) of ∼ 1044.4 is obtained in the CaCu3Ti4.15Sn0.05O12 sintered at 1080°C. X-ray diffraction and field emission scanning electron microscopy techniques were used for structural and microstructural evaluation of all ceramics. Elemental mapping with energy dispersive X-ray spectroscopy confirmed the presence of Sn4+ dopant at the main CaCu3Ti4O12 site and in minor TiO2 phases of all Sn4+ doped CaCu3Ti4.2O12 ceramics. This mixed phase plays an important role to increase grain boundary resistance (Rgb) and significantly improves the thermal stability of dielectric properties, as well as the nonlinear J-E relationship.     

Photo-assisted metal-organic chemical vapor deposition of CaCu3Ti4O12 (CCTO) thin films

Calcium copper titanate (CaCu₃Ti₄O₁₂) or CCTO is one of the most researched giant dielectric constant materials in recent years. In the present work, incoherent light source based photo-assisted metal-organic chemical vapor deposition (MOCVD) has been used to prepare CCTO thin films on Si/SiO₂ substrates. Key to this unique processing technique is the use of UV radiation as an additional source of energy in conjunction to the thermal energy. The given Photo-assisted MOCVD processing resulted in polycrystalline CCTO growth on a SiO₂ surface. Powder X-ray diffraction and scanning electron microscopy were performed to analyze structural and compositional properties of the CCTO thin film. Ellipsometric measurements indicated a refractive index of 3.03 for the CCTO thin film.     

Thermoelectric Properties of Dy-Doped SrTiO3 Ceramics

Sr_1?x Dy _x TiO₃ (x?=?0.02, 0.05, 0.10) ceramics were prepared by the reduced solid-state reaction method, and their thermoelectric properties were investigated from room temperature to 973?K. The resistivity increases with temperature, showing metallic behavior. The Seebeck coefficients tend to saturate at high temperatures, presenting narrow-band behavior, as proved by ab?initio calculations of the electronic structure. The magnitudes of the Seebeck coefficient and the electrical resistivity decrease with increasing Dy content. At the same time, the thermal conductivity decreases because the lattice thermal conductivity is reduced by Dy substitution. The maximum value of the figure of merit reaches 0.25 at 973?K for the Sr_0.9Dy_0.1TiO₃ sample.     

掺钠钛酸铋薄膜的制备及主要性能的研究

采用金属有机溶液分解法（MOSD）在SiO2/p-Si（111）衬底上制备了Bi3．25 Na2．25 Ti3O12（BNaT）薄膜。利用X-射线衍射技术研究了薄膜的结构和结晶性，同时还研究了不同退火温度对漏电流、积累态电容、损耗因子的影响及薄膜的I-V、C-V和ε-f性能。     

Bi4-xLaxTi3O12介电陶瓷的制备及其介电性能的研究

采用固相烧结法制备了不同掺La量、不同烧结工艺的铋层化合物 Bi4-xLaxTi3O12(x=0,0．25,0．5,0．75,1)介电陶瓷。利用宽频LCR数字电桥和XRD、 SEM分析了Bi4-xLaxTi3O12介电陶瓷的晶相和微观结构对其介电性能的影响。研究表明,1050℃烧结温度保温4h的Bi3.5La0．5Ti3O12介电陶瓷,致密性好、晶粒均匀、具有良好的综合介电性能。     

Nd2O3掺杂BaZr0.2Ti0.8O3陶瓷的介电性能

在溶胶-凝胶法制备钛酸钡(BaZr0.2Ti0.8O3)超细粉体的过程中,使用液相掺杂的方式在溶胶过程中进行了稀土元素Nd的掺杂。掺杂摩尔分数为0、0.001、0.002、0.003、0.004和0.005。掺杂改性后的BaZr0.2Ti0.8O3粉体,通过X-射线衍射(XRD)测试,结果表明在摩尔分数为0.005以内的稀土Nd掺杂并未改变BaZr0.2Ti0.8O3的钙钛矿结构。粉体烧结的陶瓷介电性能得到较大的改善:介电常数由3 389提高到4 493,而介电损耗在60 Hz时由1.4%降低到0.35%。