Micromachined piezoelectric force sensors based on PZT thin films

A micromachined lead zirconate titanate (PZT) force sensor for scanning force microscope (SFM) is conceptualized by its piezoelectricity. The fabrication procedure is interpreted, and mechanical characteristics of the micromachined PZT force sensors with various lengths are studied in this paper. A compact SFM is constructed by using the piezoelectric PZT sensor. A very clear image is taken by this SFM. The current study of the micromachined PZT force sensor can be considered as a breakthrough of design of SFM as well as a good example of integrated piezoelectric microdevices     

Monte Carlo simulation of hydrogen absorption in palladium and palladium–silver alloys

A modified Monte Carlo (MC) simulation was performed to investigate the hydrogen absorption behavior in Pd and Pd–Ag alloys of the composition Pd_xAg_1−x (x=0.7–0.8) under H₂ pressure (0.1 MPa) at different temperatures. The present method employed can consider the dissociative adsorption of hydrogen molecule and the subsequent absorption of hydrogen atom by formalizing the relationship between the pressure of hydrogen molecule and hydrogen atom. The potential parameters were determined to reproduce the solution enthalpy of hydrogen in pure metals. The results are in good agreement with experimental findings as well as previous theoretical studies. We confirmed that our method is useful to simulate the absorption of hydrogen in metals and alloys.     

Integrated-optic dispersion slope equalizer for N/spl times/ several tens of Gb/s WDM transmission

We report a dispersion slope equalizer on a planar lightwave circuit for wavelength division multiplexing (WDM) transmission. This device consists of an array of lattice-formed equalizers with different compensation values fabricated on one wafer and arrayed-waveguide gratings for wavelength multi/demultiplexing. We describe its configuration, operational principle, parameter design, fabrication, and measured characteristics in detail. N/spl times/20 and N/spl times/40 Gb/s slope equalizers were fabricated and their characteristics agreed well with designed values. We also report a reduction in the bias electrical power needed for thermooptic phase shifters in the equalizer array that we realized by employing a phase trimming technique normally used for optical switches.     

Mechanical property changes in sapphire by nickel ion implantation and their dependence on implantation temperature

Sapphire plates, cut parallel to an {0001} plane, have been implanted with 300 keV nickel ions to doses ranging from 5×10¹² to 1×10¹⁷ Ni cm^–2 at specimen temperatures of 100, 300 and 523 K, in order to investigate the effect of implantation temperature on the mechanical property changes in sapphire caused by ion implantation. The measured changes in surface hardness, surface fracture toughness and bulk flexural strength were found to depend strongly on the implantation temperature, and were largely correlated with the residual surface compressive stress measured by using a cantilever beam technique. The surface amorphization that occurred only by the implantation at 100 K and at doses larger than 2×10s15 Ni cm^–2 reduced the hardness to 0.6 relative to the value of the unimplanted sapphire, and considerably increased the surface plasticity. Furthermore, the amorphization was found to involve a large volume expansion of 30% and to change drastically the apparent shape and size of a Knoop indentation flaw made prior to implantation. This effect was suggested to reduce stress concentrations at surface flaws and hence to increase the flexural strength.     

Hydrophobic effects on protein/nucleic acid interaction: enhancement of substrate binding by mutating tyrosine 45 to tryptophan in ribonuclease Tl

Hydrophobic effects on binding of ribonuclease Tl to guaninebases of several ribonucleotides have been proved by mutatinga hydrophobic residue at the recognition site and by measuringthe effect on binding. Mutation of a hydrophobic surface residueto a more hydrophobic residue (Tyr45 – Trp) enhances thebinding to ribonucleotides, including mononucleotide inhibitorand product, and a synthetic substrate-analog trinudeotide aswell as the binding to dinucleotide substrates and RNA. Enhancementson binding to non-substrate ribonucleotides by the mutationhave been observed with free energy changes ranging from –2.2 to – 3 .9 kJ/mol. These changes are in good agreementwith that of substrate binding, –2.3 kJ/mol, which iscalculated from Michaelis constants obtained from kinetic studies.It is shown, by comparing the observed and calculated changesin binding free energy with differences in the observed transferfree energy changes of the amino acid side chains from organicsolvents to water, that the enhancement observed on guaninebinding comes from the difference in the hydrophobic effectsof the side chains of tyrosine and tryptophan. Furthermore,a linear relationship between nucleolytic activities and hydrophobicityof the residues (Ala, Phe, Tyr, Trp) at position 45 is observed.The mutation could not change substantially the base specificityof RNase Tl, which exhibits a prime requirement for guaninebases of substrates.     

Linearized method: A new approach for kinetic analysis of central dopamine D(2) receptor specific binding

We proposed a new method (;linearized method') to analyze neuroleptic ligand-receptor specific binding in a human brain using positron emission tomography (PET). We derived the linear equation to solve four rate constants, k(3), k(4), k(5), k(6) from PET data. This method does not demand a radioactivity curve in plasma as an input function to the brain, and can perform fast calculations in order to determine rate constants. We also tested the nonlinearized method including nonlinear equations which is a conventional analysis using plasma radioactivity corrected for ligand metabolites as an input function. We applied these methods to evaluate dopamine D(2) receptor specific binding of [(11)C] YM-09151-2. The value of B(max)/K(d)=k(3)/k (4) obtained by the linearized method was 5.72+/-3.1 which was consistent with the value of 5.78+/-3.4 obtained by the nonlinearized method.     

Structural approach to nanoscience: a case study of complex and cluster formation in ZnBr2–ZnCl2 melts

Although the melt structure of glass-forming ZnCl₂ has so far been well studied, there exists quite little information on the structural change due to anion-substitution. In the present work, the short-range structure of ZnCl₂–ZnBr₂ mixture melts was analyzed systematically by time-of-flight pulsed neutron diffraction techniques, Raman spectroscopy, molecular orbital calculations, and molecular dynamics simulations. According to radial distribution analysis, it was found that there were tetrahedral structural units of ligand-substituted [ZnCl_nBr_4−n]²⁻ (n=0–4) in these melts, not implying the simple mixing of [ZnCl₄]²⁻ and [ZnBr₄]²⁻ units. Further detailed estimation indicated that the ligand-substituted complex anions were linked with each other by sharing a common anion.     

Thermal cis–trans conversion in thiophene oligomers

Thermal cis–trans conversion has been examined in oligothiophene single molecules encapsulated in the molecular vessels of cyclodextrin and Na-mordenite. At high temperatures, optical absorption intensities are enhanced in bithiophene, terthiophene and quinquethiophene, while the intensity of quarterthiophene is temperature independent. Optical absorption comes from uncompensated transition dipole moment due to the thermal torsion between cis and trans forms.     

Properties of Bi-doped PbTe layers grown by liquid phase epitaxy under controlled Te vapor pressure

Effects of Bi doping in PbTe liquid-phase epitaxial layers grown by the temperature difference method under controlled vapor pressure (TDM-CVP) are investigated. For Bi concentrations in the solution, x_Bi, lower than 0.2 at.%, an excess deep-donor level (activation energy E_d≈0.03–0.04 eV) appears, and Hall mobility is low. In contrast, for x_Bi>0.2 at.%, Hall mobility becomes very high, while carrier concentration is in the range of 10¹⁷ cm⁻³. Inductive coupled plasma (ICP) emission analysis shows that, for x_Bi=1 at.%, Bi concentration in the epitaxial layer is as high as N_Bi=2.3–2.7 × 10¹⁹ cm⁻³. These results indicate that Bi behaves not only as a donor but also as an acceptor, and the nearest neighbor or very near donor-acceptor (D-A) pairs are formed, so that strong self-compensation of Bi takes place. Carrier concentration for highly Bi-doped layers shows a minimum at a Te vapor pressure of 2.2 × 10⁻⁵ torr for growth temperature 470°C, which is coincident with that of the undoped PbTe.