On detecting a human and its body direction from a video

This article describes a novel technique for detecting a human and his or her body direction using the histograms of oriented gradients (HOG) feature. The HOG feature is a well-known feature for judging a human, but normally it contains a background feature, which has a negative influence on the judgment. This article proposes the employment of the HOG feature based on a human model. The feature is also employed for detecting the direction of a human body. Experimental results show the effectiveness of the proposed technique compared with conventional ones.     

THE EFFECT OF BIAXIAL STRESS STATE AND CHANGES OF STATE ON FATIGUE CRACK GROWTH BEHAVIOUR

Abstract— The effect of biaxial loading on the fatigue crack growth properties for a stainless steel has been examined. From comprehensive experiments, a significant biaxial stress effect on crack growth was found when the stress level was high and the crack was short. In this paper, the critical region where the effect of biaxial stress appears was clarified quantitatively. Moreover, the effect of changing the biaxial stress condition on fatigue crack growth behaviour was investigated. Significant acceleration of crack growth was observed just after the uniaxial or equibiaxial stress condition was changed to the shear stress condition. This acceleration seems to be due to the change of plastic zone shape at the crack tip.     

Liquid source chemical vapor deposition of high-dielectric-constant (Ba,Sr)TiO3 films

High-dielectric-constant (Ba, Sr)TiO₃ [BST] films were deposited by the liquid source chemical vapor deposition (CVD) method. The system consisted of a single-wafer, low-pressure thermal CVD reactor, a vaporizer for liquid source materials, and a shower-type gas nozzle head, giving stable BST film deposition on a 6-in. diam. substrate with uniform thickness and uniform chemical composition ratio. The source materials employed were Ba(DPM)₂, Sr(DPM)₂, and TiO(DPM)₂ dissolved in tetrahydrofuran (THF), resulting in conformal step coverage of BST films at lowered substrate temperatures, where DPM denotes dipivaloylmethanate. Moreover, the two-step deposition technique was developed to restart protrusions formed on BST film surfaces at low temperatures, where the BST films consisted of a buffer layer and a main layer; the buffer layer was a layer about 60 Å thick of CVD-BST film annealed in N₂. Thus, the two-step CVD deposition of BST films on Pt and Ru electrodes achieved an equivalent SiO₂ thickness of t_eq ∼ 0.5 nm, a leakage current of J_L ∼ 1.0 × 10⁻⁸ A/cm² (at +1.1 V), and a dielectric loss of tan δ ∼ 0.01 at a total film thickness of 250 Å, along with conformal coverage of 80% for a trench with an aspect ratio of 0.65. Then, for BST films deposited on patterned electrodes 0.24 μm wide, 0.60 μm deep, and 0.15 μm high (each spaced by 0.14 μm), the capacitance was demonstrated to be increased without significant deterioration of the leakage current: the capacitance was increased in comparison with that for films on flat electrodes, by a factor corresponding to the increase in surface area due to sidewalls of storage-node-like pattern features. This capacitance increase reflects the most characteristic advantage of CVD, an excellent step coverage on microscopic pattern features. These electrical properties satisfy the specifications for capacitors for Gb-scale dynamic random access memories (DRAMs), giving a storage capacitance of more than 25 fF/cell for a stacked capacitor having a storage node 0.2 to 0.3 μm high. © 1998 Scripta Technica, Electr Eng Jpn, 125(1): 47–54, 1998     

Interface reactions at TiN/HfSiON gate stacks: Dependence on the electrode structure and deposition method

We systematically investigated intrinsic and extrinsic thermal reactions at TiN/HfSiON gate stacks. The formation of an ultrathin TiO₂ interlayer was found to be an intrinsic reaction at the metal/insulator interface, but growth of SiO₂ underlayers between HfSiON and Si substrates, which determines the electrical thickness of metal-oxide-semiconductor (MOS) devices, depends on the structure and deposition method of the gate electrodes. Physical vapor deposition (PVD) grown TiN electrodes covered with W overlayers exhibited excellent thermal stability at up to 1000 °C. Formation of ultrathin TiO₂ interlayers reduced gate leakage current (I_g), and growth of the oxide underlayer was suppressed by less than a few angstroms even for 1000 °C annealing. In contrast, we found that halogen impurities within CVD-grown metal electrodes enhance interface SiO₂ growth, resulting in deterioration of equivalent oxide thickness (EOT) versus I_g characteristics of the gate stacks.     

Boundary element analysis of dissimilar materials and interface crack

The highly-accurate BEM elastostatic program, which is especially useful for the analysis of dissimilar materials and interface cracks, is introduced in brief. By using this program, we can deal with the elastostatic poblems of isotropic or orthotropic dissimilar materials and also the bonded residual stress due to the mismatch of material constants. This paper shows some applications of the BEM program to the analysis of dissimilar materials and interface cracks considering the residual stress quantitatively, and also shows the method to evaluate the strength of dissimilar materials based on the interfacial fracture mechanics. Some experimental results and the evaluation on the strength of dissimilar materials are also presented.     

Space charge distribution for various glass materials under DC stress

Space charge accumulation for various glass materials under DC stress was studied by using a pulse electroacoustic (PEA) method. We should make an acoustic matching between the sample and electron on the high‐voltage side when the hetero‐space charge distribution in glass materials is measured. The acoustic pressure wave generated from the induced charge at the high‐voltage side is canceled by the reflected one generated from hetero‐charge accumulated in the sample. Large hetero‐charge is observed in the glass materials containing MgO and CaO compound compared to the quartz glass containing no such compounds. © 2004 Wiley Periodicals, Inc. Electr Eng Jpn, 148(1): 19–27, 2004; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.10260     

Virtual synchronous generator model control of PV for improving transient stability and damping in a large‐scale power system

Because of the significant changes in environmental policies and electric power deregulation in the last decade, a lot of photovoltaic generations (PV) have been and will be installed into the power system in Japan and the ratio of PVs to other synchronous generators will be increased. As a countermeasure against the decrease in the rotational inertia in the whole power system, a virtual synchronous generator (VSG) model control of the PV has so far been proposed. However, the system stabilization effect of the VSG in large‐scale power systems has been unclear. In this paper, a virtual step‐out blocking method of VSG for improving the transient stability is proposed. In addition, the necessity of governor control of VSG in a large‐scale power system is discussed. Finally, the rated kw and kwh capacities of the battery required for realizing the VSG‐model control are evaluated.     

An α2,3-Linked Sialylglycopolymer as a Multivalent Glycoligand Against Avian and Human Influenza Viruses

A glycopolymer bearing α2,3-linked sialyltrisaccharides was synthesized by living radical polymerization using a glycomonomer prepared by a protecting-group-free process, direct azidation of the free sialyllactose, and subsequent azide-alkyne cycloaddition. The prepared glycopolymer with pendant 3´-sialyllactose moieties strongly interacted with both avian and human influenza viruses analyzed by the hemagglutination inhibition assay and the quartz crystal microbalance method.