Polymer electrets and their applications

Polymer electrets have revealed great potential application in electromechanical devices because of the low weight, large quasi-piezoelectric sensitivity, and excellent flexibility. For an electret, a permanent and macroscopic electric field exists on the surface, principally led by a macroscopic electrostatic charge on the surface or a net orientation of polar groups inside the object. Here, progress in the development of polymer electrets is reviewed. After a brief retrospect of the research courses and those typical polymer electrets that are classified into fluorine polymer and nonfluorine polymer, we present a survey on the charging methods, including corona, soft X-ray, contact, thermal and monoenergetic particle beams. The latest representative applications (i.e., power harvesting, sensors, field effect transistors, and biomedicine) based on polymer electrets are also summarized. Finally, we complete this review with a discussion on perspectives and challenges in this field.     

Technological Aspects of Synthesizing Ceramic Coatings by Flow-Through Micro-Arc Oxidation

Refractories and Industrial Ceramics - The paper introduces a promising technology for utilizing a traditional scheme for implementing a flow-through micro-arc oxidation method to restore localized...     

Theoretical investigation of intrinsic point defects and the oxygen migration behavior in rare earth hafnates

In this work, the composition-dependent point defect types and formation energies of RE₂Hf₂O₇ (RE = La, Ce, Pr, Nd, Pm, Sm, Eu and Gd) as well as the oxygen diffusion behavior are systematically investigated by first-principles calculations. The possible defect reactions and dominant defect complexes under stoichiometric and non-stoichiometric conditions are revealed. It is found that O Frenkel pairs are the predominant defect in stoichiometric pyrochlore hafnates. Hf-RE cation anti-site defects, accompanied by RE vacancies and/or oxygen interstitials, are stable in the non-stoichiometric case of HfO₂ excess. On the other hand, RE-Hf anti-site defects together with oxygen vacancies and/or RE interstitials are preferable in the case of RE₂O₃ excess. The energy barriers for the migration along the V_O48f - V_O48f pathway of pyrochlore hafnates were calculated to be between 0.81 eV and 0.89 eV. Based on these results, a defect engineering strategy is proposed and the pyrochlore hafnates investigated here are predicted to exhibit potential oxygen ionic conductivity.     

Influence of Titanium Excess in a Ti–Si Reaction Mixture on the Synthesis of a Composite in a Combustion Wave

Theoretical Foundations of Chemical Engineering - On the basis of the classic concepts of the theory of solid-phase combustion, for the first time, a model with a detailed scheme of chemical...     

Effective prediction and resource allocation method (EPRAM) in fog computing environment for smart healthcare system

Multimedia Tools and Applications - Recently, many concepts in technology has been changed. According to the digital transformation trends, Internet of Things (IoT) represents an interested...     

Diluted chemical bath deposition of CdZnS as prospective buffer layer in CIGS solar cell

In this study, dilute chemical bath deposition technique has been used to deposit CdZnS thin films on soda-lime glass substrates. The structural, morphological, optoelectronic properties of as-grown films have been investigated as a function of different Zn²⁺ precursor concentrations. The X-ray diffractogram of CdS thin-film reveals a peak corresponding to (002) plane with wurtzite structure, and the peak shift has been observed with the increase of the Zn²⁺ concentration upon formation of CdZnS thin film. From morphological studies, it has been revealed that the diluted chemical bath deposition technique provides homogeneous distribution of film on the substrate even at a lower concentration of Zn²⁺. Optical characterization has shown that the transparency of the film is influenced by Zn²⁺ concentration and when the Zn²⁺ concentration is varied from 0 M to 0.0256 M, bandgap values of resulting films range from 2.42 eV to 3.90 eV while. Furthermore, electrical properties have shown that with increasing zinc concentration the resistivity of the film increases. Finally, numerical simulation validates and suggests that CdZnS buffer layer with composition of 0.0032 M Zn²⁺ concentration would be a promising candidate in CIGS solar cell.     

Modeling of Ignition and Combustion of a Coflowing Hydrogen Jet in a Supersonic Air Flow

Combustion, Explosion, and Shock Waves - Results of a numerical study of mixing, ignition, and combustion of a cold hydrogen jet propagating along the lower wall of a channel parallel to a...     

Low light enhancement algorithm for color images using intuitionistic fuzzy sets with histogram equalization

Multimedia Tools and Applications - In this work, a new fuzzy logic-based algorithm is proposed for the enhancement of low light color images. A generalization of a fuzzy set known as an...