引黄五座泵站火灾自动报警及联动控制系统

介绍了引黄工程五座泵站的火灾自动报警系统的组成及功能，对泵站的火灾探测系统、报警系统、联动控制系统、灭火系统、控制台等原理进行了详细说明，供同行参考借鉴。     

阳泉市煤矿采空区地质因素对公路的破坏

介绍了阳泉市煤矿采空区对公路建设所造成的危害，对其上覆岩层变形破坏的地质因素及其破坏机理作了分析，指出应该采取各种措施减少对公路的破坏。     

预应力钢-混凝土组合梁的应用与研究

回顾了预应力钢 混凝土组合梁国内外应用与研究历史 ,分析了现有规范及理论的不足 ,并指出了有待解决的问题。     

Stress distribution on [100] Si wafer mapped by novel I-V analysis of MOS tunneling diodes

The current-voltage (I-V) characteristics of metal-oxide-semiconductor tunneling diodes distributed over a 3-in Si wafer were analyzed to investigate the stress distribution on the wafer. Generally, the substrate injection saturation current (J/sub sat/) decreases as the gate injection leakage current (J/sub g/) increases, the latter being dominated by oxide thickness via a trap related mechanism. A universal curve to fit all analyzed data was found and it is suggested that devices with extremely high (low) J/sub sat/ at a given J/sub g/ should be located in areas of the silicon lattice with relatively high external compressive (tensile) stress because of the stress-induced bandgap variation effect. The mapped locations of the highly stressed devices on a 3-in [100] Si wafer correspond to the patterns of slips caused by thermal stress during rapid thermal processing, as described in previous reports.     

多孔挡板流化床还原UO3反应器模型的研究

针对ＵＯ＿３的Ｎ＿２还原反应建立了多孔挡板流化床反应器模型。将多孔挡板床的每一级视为具有相似的流动状态，每一级的上、下段称为稀、密相段，分别用鼓泡床和活塞流模型描述。该模型的计算值与￠６３ｍｍ的多孔挡板床Ｈ＿２还原ＵＯ＿３的热态实验值能较好的吻合。还预计了还原温度、操作气速和挡板结构参数对固相转化率的影响，为该类反应器的工业设计、放大和优化提供了依据。     

Temperature dependence of hydrogenated amorphous silicon thin-film transistors

The temperature dependence characteristics of hydrogenated amorphous silicon thin-film transistors were investigated. The results indicate that as the temperature was increased, the threshold voltage and the field-effect mobility were first increased, and then decreased, which may be controlled by different mechanisms at low and high temperatures. In addition, if the temperature was higher than 420 K, the Fermi level was promoted to the degenerate-like states, the current channel always existed due to the temperature effect, and the threshold voltage became negative.     

U(Ⅳ)-U(Ⅵ)同位素交换反应动力学研究 Ⅰ.Fe~(2+)对U(Ⅳ)-U(Ⅵ)同位素交换反应的催化作用

一、前言由于U(IV)-U(VI)同位素交换体系具有相当大的同位素效应和很好的稳定性,并且容易实现两相回流,这对于分离U同位素的工业应用都是十分有利的。但是,U(IV)-U(VI)同位素交换反应速度非常慢,常温下H~+浓度为1.0—4.0 mol/l时,速度常数为1.0×10~(-4)l~2/mol·s。因此要用U(IV)-U(VI)交换体系浓缩铀同位素,必须研究U(IV)-U(VI)交换反应动力学,找到加快交换反应的方法。     

实验教学要重视理论思维的作用

论述了在正确的理论思维的指导下，学生才能通过实验获得感性认识，并且上升到理性认识，并从提高动手能力，使实验取得良好的教学效果。