吸湿凉爽机织物的结构设计与性能

为研究织物组织结构与复合纱线线密度对织物凉爽性能的影响,将线密度为7.4和9.8 tex涤纶分别与线密度为7.8 tex锦纶反向加捻、并线后作为纬纱,以8.3 tex涤纶/竹浆纤维50/50混纺纱作经纱,设计平纹、二上一下斜纹和透孔组织织物.测试织物的瞬间接触凉感、热湿舒适性能及织物干、湿态升温曲线,并采用凉爽温度指数对织物的综合凉爽性能进行评价.研究结果表明:6种设计织物的瞬间接触凉感均高于标准,且平纹织物最好,纬纱粗细对瞬间接触凉感影响不显著;透孔织物透气性最好,且在人体出汗的状态下具有较好的导湿散热性能.平纹织物凉爽温度指数最高,最大凉爽温度为2.8℃,综合凉爽性能最好.     

大型连杆流线简易试验方法

介绍了一种大型连杆流线的简易试验方法及其评价原则。该方法可清晰显示流线，并适合任何尺寸和形状的锻造连杆的流线试验。     

首钢外购焦炭质量恶化后的高炉生产实践

针对焦炭质量劣化的状况，高炉操作以活跃炉缸为主，从上下部调剂入手，采取疏导煤气、控制合理的实际风速和鼓风动能、缓解焦炭在高温区的粉化等措施，有效地改善了高炉的顺行状况，并逐步恢复高炉指标。     

气缸可靠性试验装置的研制

为了进行气缸可靠性试验研究,针对缸径为50mm、行程为160mm的气缸研制了一套气缸可靠性试验装置.5个月的不间断试验测试及获得的大量数据表明,该装置运行稳定可靠,满足了气缸可靠性试验的要求.详细介绍了装置试验回路的构成、工作原理和具体实现,测控子系统的硬件构成和软件流程,气缸性能参数测量方法及获得的部分数据.     

Effects of compressive and tensile stress on the growth mode of epitaxial oxide films

Oxide films were deposited on different substrates by laser molecular beam epitaxy. Reflection high-energy electron diffraction was performed to in situ investigate the change of growth mode and the lattice relaxation during the growth. An asymmetrical phenomenon was found in the two kinds of strain states, compressive stress and tensile stress of heterostructures with different lattice mismatch. In the case of BaTiO₃/SrTiO₃ (2.2%), 2D layer-by-layer growth mode without lattice relaxation can be maintained for a longer period for BTO films on STO with compressive stress, comparing to STO films on BTO with tensile stress. When MgO films were deposited on SrTiO₃ with a large mismatch of 7.8%, compressive stress leads to rapid lattice relaxation with a very thin wet layer, and 3D strained island were observed. As a comparison, SrTiO₃ films on MgO with tensile stress were configured. No RHEED patterns can be observed duo to a large tensile stress.     

非烧结砖的发展、问题及对策

非烧结砖是相对于烧结砖而言的，即不经烧结而用于砌筑墙体的砖。     

涤纶复合丝（POY＋DTY）的研发

DTY和POY网络复合丝是以聚酯直纺生产的两种不同规格的POY丝为原料,通过对加弹机进行适当改造,利用不同的加工路线,使一股POY丝经过加捻后形成DTY,再与另一股POY丝网络合股形成包芯复合丝.该复合丝利用POY丝和DTY丝的收缩差异和染色差异等不同风格特性,使得布面形成一种具有雪花状的色丁效果.该复合丝属于差别化纤维,是国家鼓励发展的项目,它具有优良的吸湿排汗性能和弹性保暖性能,是保暖内衣的首选面料,市场前景广阔.     

Modeling electromigration lifetime under bidirectional currentstress

Electromigration reliability of interconnect under bidirectional current stress has been studied in a wide frequency range (mHz to 200 MHz). Experimental results show that the AC lifetime rises with the stress current frequency. The current density exponent and the activation energy of AC lifetime are found to be twice that of DC lifetime. Pure AC current stress failure at extremely high current density is believed to result from thermal migration of metal at hot/cold transition points     

Optimal solutions for a dynamic bandwidth allocation scheme in high-speed networks

In this paper, we investigate the problem of determining the optimal bandwidth allocation for a Dynamic Bandwidth Allocation Scheme (DBAS). The objective is to minimize the total amount of bandwidth required to satisfy the Quality of Service (QoS) requirements of all traffic streams. It is shown that when the performance functions satisfy a certain number of conditions, there exists a unique optimal bandwidth allocation such that, for each traffic stream, either its QoS is just satisfied or its QoS is over-satisfied and it is allocated zero bandwidth. Such an allocation is said to be efficient. It is also shown that there exists a unique efficient allocation in the entire feasible region. An iterative algorithm is developed to compute the efficient allocation employing its special properties. Numerical examples are presented to demonstrate how the algorithm works. Future extensions of this work are also discussed.Partially supported by NSERC of Canada through grants OGP14020 and STRIN-200.     

Electrical properties and positron annihilation study of (Ba<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ho<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>)TiO<Subscript>3</Subscript> ceramics

DC resistivity, dielectric constant, dielectric loss and positron annihilation spectra of (Ba_1−x Ho _x )TiO₃ ceramics have been measured as a function of holmium concentration x. It has been found that the DC resistivity of (Ba_1−x Ho _x )TiO₃ is strongly dependent on the Ho content: it decreases three orders of magnitude and reaches a minimum at x = 0.4%. Doping with 0.6% holmium increases the permittivity of BaTiO₃ by approximately three times (from ∼1,300 to ∼4,000), with only a slight increase in the corresponding dielectric loss. The local electron density and defect concentration estimated using positron annihilation technique conforms well to the features found in the dielectric and resistivity measurements. The results have been discussed in terms of a mixed compensation model.