Stress distribution on [100] Si wafer mapped by novel I-V analysis of MOS tunneling diodes

The current-voltage (I-V) characteristics of metal-oxide-semiconductor tunneling diodes distributed over a 3-in Si wafer were analyzed to investigate the stress distribution on the wafer. Generally, the substrate injection saturation current (J/sub sat/) decreases as the gate injection leakage current (J/sub g/) increases, the latter being dominated by oxide thickness via a trap related mechanism. A universal curve to fit all analyzed data was found and it is suggested that devices with extremely high (low) J/sub sat/ at a given J/sub g/ should be located in areas of the silicon lattice with relatively high external compressive (tensile) stress because of the stress-induced bandgap variation effect. The mapped locations of the highly stressed devices on a 3-in [100] Si wafer correspond to the patterns of slips caused by thermal stress during rapid thermal processing, as described in previous reports.     

Synthesis and characterization of poly(siloxane-urethane)s

A series of polyurethane block copolymers based on hydroxy-terminated polydimethylsiloxane and poly(propylene glycol) soft segments of molecular weights 1818 and 2000, respectively, were synthesized. The hard segments consisted of 4,4′-diphenylnethane diisocyanate and 1,4-butanediol as the chain extender. Samples with different molar ratios were prepared. We tried to synthesize polydimethylsiloxane-based polyurethanes (PDMS-PU) containing a hard block as major fraction and a soft block as minor fraction for preparing toughened rigid systems. After a study of the pure polydimethylsiloxane-based polyurethane and poly(propylene glycol)-based polyurethane (PPG-PU), (mixed polyol)-based block copolymers and blends of PDMS-PU and PPG-PU were synthesized, and characterized by means of differential scanning calorimetry, tensile testing and scanning electron microscopy. In (mixed polyol)-based copolymers and lower hard-segment content blends, macro-phase separation occurred, but blends with higher hard-segment contents showed significant reduction in amounts of phase separation.     

Differential K+ channel clustering activity of PSD-95 and SAP97, two related membrane-associated putative guanylate kinases

The molecular mechanisms underlying the clustering and localization of K+ channels in specific microdomains on the neuronal surface are largely unknown. The Shaker subclass of voltage-gated K+ channel alpha-subunits interact through their cytoplasmic C-terminus with a family of membrane-associated putative guanylate kinases, including PSD-95 and SAP97. We show here that heterologous coexpression of either sap97 or PSD-95 with various Shaker-type subunits results in the coclustering of these proteins with the K+ channels. Mutation of the C-terminal sequence (-ETDV) of the Shaker subunit Kv1.4 abolishes its binding to, and prevents its clustering with, SAP97 and PSD-95. Whereas PSD-95 induces plaque-like clusters of K+ channels at the cell surface; however, SAP97 coexpression results in the formation of large round intracellular aggregates into which both SAP97 and the K+ channel proteins are colocalized. The efficiency of surface clustering by PSD-95 varies with different Shaker subunits: striking Kv1.4 clustering occurs in > 60% of cotransfected cells, whereas Kv1.1 and Kv1.2 form convincing clusters with PSD-95 only in approximately 10% of cells.     

Mixing in processing of thermoplastics by extrusion

Translated from Khimicheskoe i Neftyanoe Mashinostroenie, No. 8, pp. 9–11, August, 1993.     

Reduction of loading effect by tungsten etchback in a magneticallyenhanced reactive ion etcher

The plug loading effect occurring during the etchback of tungsten was investigated in a magnetically enhanced reactive ion etcher using SF ₆/Ar mixtures. It was found that while the plug loading effect is independent of varying SF₆/Ar flow rate ratio and magnetic field intensity, it is reduced under the condition of high selectivity of tungsten relative to TiN which was achieved at high chamber pressure and low RF power. It is proposed that when TiN is used as a glue layer, the W etch rate enhancement in the plug is mainly controlled by a local loading effect. Under the optimized etchback conditions the plug loss was successfully controlled without the tungsten residue left on severe topology     

The prospects of non-volatile phase-change RAM

Phase-change read-and-write memory (PRAM) is a promising memory that can solve the problems of conventional memory—scalability, read/write speed, and reliability. We will review the opportunities and technical challenges of PRAM. The most important challenge of PRAM is the reduction of the writing current. Various approaches to reduce the writing current will be reviewed and the prospects of PRAM are discussed.     

Complete joint weight enumerators and self-dual codes

We define the complete joint weight enumerator in genus g for codes over /spl Zopf//sub 2k/ and use it to study self-dual codes and their shadows. These weight enumerators are related to the theta series of the associated lattices and Siegel and Jacobi forms are formed from these series.     

Temperature dependence of hydrogenated amorphous silicon thin-film transistors

The temperature dependence characteristics of hydrogenated amorphous silicon thin-film transistors were investigated. The results indicate that as the temperature was increased, the threshold voltage and the field-effect mobility were first increased, and then decreased, which may be controlled by different mechanisms at low and high temperatures. In addition, if the temperature was higher than 420 K, the Fermi level was promoted to the degenerate-like states, the current channel always existed due to the temperature effect, and the threshold voltage became negative.